AOSMD AOD460 N-channel enhancement mode field effect transistor Datasheet

AOD460
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD460 uses advanced trench technology and
design to provide excellent R DS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications.
VDS (V) = 25V
ID = 25 A (VGS = 10V)
RDS(ON) < 14 mΩ (VGS = 10V)
RDS(ON) < 24 mΩ (VGS = 4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Top View
D
Bottom View
D
G
S
G
S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
C
C
Repetitive avalanche energy 0.1mH
TC=25°C
Power Dissipation
B
Power Dissipation
A
Units
V
±20
V
25
TC=100°C
Pulsed Drain Current
Avalanche Current
Maximum
25
C
TA=25°C
Junction and Storage Temperature Range
Maximum Junction-to-Case B
Alpha & Omega Semiconductor, Ltd.
IDM
70
IAR
20
A
EAR
20
mJ
30
2.5
W
1.6
TJ, TSTG
-55 to 175
Symbol
t ≤ 10s
Steady-State
Steady-State
W
15
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
20
PD
TC=100°C
A
ID
RθJA
RθJC
Typ
15
41
3.6
°C
Max
20
50
5
Units
°C/W
°C/W
°C/W
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AOD460
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250uA, VGS=0V
Typ
V
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
70
TJ=55°C
VGS=10V, ID=20A
100
nA
1.8
2.5
V
11.5
14
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=20A
19.2
gFS
Forward Transconductance
VDS=5V, ID=20A
18.9
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.74
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
17.7
830
VGS=0V, VDS=12.5V, f=1MHz
µA
5
RDS(ON)
Output Capacitance
Units
25
VDS=20V, VGS=0V
IDSS
Coss
Max
mΩ
24
mΩ
1
V
25
A
1000
pF
S
224
pF
127
pF
0.93
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
15.3
19
nC
Qg(4.5V) Total Gate Charge
7.4
9
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=12.5V, ID=20A
VGS=10V, VDS=12.5V,
RL=0.625Ω, RGEN=3Ω
2.7
nC
4.3
nC
8
ns
11.7
ns
30
ns
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
23.5
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
12.8
11
ns
30
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power
dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev 3: Sep 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
80
VDS=5V
10V
6V
60
30
ID(A)
ID (A)
4.5V
40
125°C
20
25°C
10
20
VGS=3V
0
0
0
1
2
3
4
2
5
2.5
25
3.5
4
4.5
5
1.6
Normalized On-Resistance
VGS=4.5V
20
RDS(ON) (mΩ )
3
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
15
10
VGS=10V
VGS=10V, 20A
1.4
1.2
VGS=4.5V,20A
1
5
0
5
10
15
20
25
30
35
40
0.8
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
40
100
125
150
1.0E+02
35
1.0E+01
ID=20A
125°C
1.0E+00
30
IS (A)
RDS(ON) (mΩ )
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
25
125°C
20
1.0E-01
1.0E-02
25°C
1.0E-03
1.0E-04
15
25°C
1.0E-05
10
2.00
0.0
4.00
6.00
8.00
10.00
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
VDS=12.5V
ID=20A
1200
Capacitance (pF)
VGS (Volts)
8
6
4
1000
Ciss
800
600
400
Coss
200
2
Crss
0
0
0
0
2
4
6
8
10
12
14
16
5
10
15
20
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
100
200
RDS(ON)
limited
10µs
Power (W)
DC
ID (Amps)
TJ(Max)=175°C
TC=25°C
160
100µs
10
1ms
1
120
80
40
TJ(Max)=175°C, TC=25°C
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=5°C/W
0
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Single Pulse
0.01
0.00001
0.0001
Ton
0.001
0.01
0.1
T
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOD460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
35
L⋅ ID
tA =
BV − VDD
25
30
Power Dissipation (W)
ID(A), Peak Avalanche Current
30
20
15
10
TA=25°C
25
20
15
10
5
5
0.00001
0
0.0001
0.001
0
25
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
100
125
150
175
50
TA=25°C
25
40
20
Power (W)
Current rating ID(A)
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
30
15
30
20
10
10
5
0
0.0001 0.001
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
Zθ JA Normalized Transient
Thermal Resistance
50
175
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
0.01
0.001
0.00001
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
Single Pulse
0.0001
0.001
0.01
0.1
PD
Ton
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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AOD460
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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