AOSMD AOL1414L N-channel enhancement mode field effect transistor Datasheet

AOL1414
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOL1414 uses advanced trench technology to
provide excellent R DS(ON), low gate chargeand low
gate resistance. This device is ideally suited for use
as a high side switch in CPU core power conversion.
Standard Product AOL1414 is Pb-free (meets ROHS
& Sony 259 specifications). AOL1414L is a Green
Product ordering option. AOL1414 and AOL1414L
are electrically identical.
VDS (V) = 30V
ID = 85A (VGS = 10V)
RDS(ON) < 6.5mΩ (VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 4.5V)
Ultra SO-8TM Top View
D
S
Fits SOIC8
footprint !
Bottom tab
connected to
drain
D
G
S
G
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Continuous Drain
Current B
TC=25°C
ID
IDM
Pulsed Drain Current
Continuous Drain
TA=25°C
Current G
TA=70°C
Avalanche Current C
Power Dissipation
B
Power Dissipation
A
C
TC=25°C
Junction and Storage Temperature Range
IDSM
IAR
12
30
A
EAR
135
mJ
100
2.5
W
1.6
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
W
50
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
A
200
PDSM
TA=70°C
A
V
70
PD
TA=25°C
A
±12
15
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case C
Units
V
85
TC=100°C
Repetitive avalanche energy L=0.3mH
Maximum
30
RθJA
RθJC
Typ
19.5
48
1
°C
Max
25
60
1.5
Units
°C/W
°C/W
°C/W
AOL1414
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
Min
ID=250μA, VGS=0V
VDS=24V, VGS=0V
30
VDS=0V, VGS= ±12V
VDS=VGS ID=250μA
VGS=10V, VDS=5V
VGS=10V, ID=20A
Static Drain-Source On-Resistance
gFS
VSD
IS
VGS=4.5V, ID=20A
Forward Transconductance
VDS=5V, ID=20A
Diode Forward Voltage
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
SWITCHING PARAMETERS
Qg(4.5V) Total Gate Charge
Gate Source Charge
Qgs
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
Body Diode Reverse Recovery Charge
Max
0.002
1
5
100
2
1
100
TJ=125°C
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=20A
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
IF=20A, dI/dt=100A/μs
IF=20A, dI/dt=100A/μs
Units
V
TJ=55°C
RDS(ON)
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Coss
Crss
Reverse Transfer Capacitance
Gate resistance
Rg
Typ
1.5
μA
nA
V
A
4.9
6.9
6
90
0.74
6.5
8.3
7.5
mΩ
1
85
S
V
A
2100
536
165
0.95
2520
19.7
3.6
7.9
5.9
11
36.2
12
24
10
17
55
18
nC
nC
nC
ns
ns
ns
ns
35
33
42
50
ns
nC
1.5
mΩ
pF
pF
pF
Ω
A: The value of R qJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R qJA is the sum of the thermal impedence from junction to case R qJC and case to ambient.
E.
The static characteristics
Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
Continuous
Drain CurTinC=25°C
F. These curves are based T
on=100°C
the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
C
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
Rev1: Dec. 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOL1414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
60
10V
3.5V
50
50
VDS=5V
3V
40
125°C
ID(A)
ID (A)
40
30
30
20
25°C
20
VGS=2.5V
10
10
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics
5
7
1
1.5
2
2.5
3
VGS(Volts)
Figure 2: Transfer Characteristics
3.5
1.8
Normalized On-Resistance
ID=20A
6.5
RDS(ON) (mΩ)
VGS=10V
1.6
VGS=4.5V
6
1.4
5.5
VGS=10V
VGS=4.5V
1.2
5
4.5
4
1
0.8
0
10
20
30
40
50
60
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Continuous
Drain Cur TC=25°C
20
TC=100°C
1.0E+02
1.0E+01
16
125°C
1.0E+00
IS (A)
ID=20A
RDS(ON) (mΩ)
25
12
1.0E-01
25°C
1.0E-02
125°C
1.0E-03
8
25°C
1.0E-04
1.0E-05
4
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOL1414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3500
5
VDS=15V
ID=20A
3000
Capacitance (pF)
VGS (Volts)
4
3
2
2500
Ciss
2000
1500
Coss
1000
1
Crss
500
0
0
0
5
10
15
20
25
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
1000
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
250
10μs
RDS(ON)
limited
1ms
100μs
DC
10
T J(Max)=175°C
T C=25°C
1
T J(Max)=175°C
T C=25°C
210
Power (W)
100
ID (Amps)
5
170
130
90
50
0.0001
0.1
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Continuous Drain Cur TC=25°C
10
TC=100°C
D=T /T
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Case (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
on
ZθJC
Normalized Transient
Thermal Resistance
0.001
T J,PK =T A+PDM.ZθJA.RθJA
RθJC=1.5°C/W
1
PD
0.1
T on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
T
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOL1414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
T A=25°C
80
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
60
40
20
0
0.00001
90
60
30
0
0.0001
0.001
0.01
0
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note B)
100
100
80
80
Power (W)
Current rating ID(A)
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
60
40
20
60
40
20
0
0
25
50
75
100
125
150
175
0
0.01
TCASE (°C)
Figure 14: Current De-rating (Note B)
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
Continuous Drain Cur TC=25°C
10
TC=100°C
In descending
order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
D=T on/T
T J,PK =T A+PDM.ZθJA.RθJA
RθJA=60°C/W
0.01
0.001
0.00001
0.0001
0.001
0.01
T on
T
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
100
1000
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