AOL1718 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ideally suited for use as a low side switch in CPU core power conversion. VDS (V) = 30V ID = 90A (VGS = 10V) RDS(ON) < 3mΩ (VGS = 10V) RDS(ON) < 4.3mΩ (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! UltraSO-8TM Top View D D S SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode Bottom tab connected to drain G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G TC=25°C Pulsed Drain Current C Continuous Drain Current TA=25°C ±20 V 71 IDM A 410 21 IDSM TA=70°C Units V 90 ID TC=100°C Maximum 30 A 16 Avalanche Current C IAR 40 A Repetitive avalanche energy L=0.1mH C EAR 80 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 2.1 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 100 PD TC=100°C RθJA RθJC Typ 19.6 48 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W www.aosmd.com AOL1718 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250υA, VGS=0V VDS=30V, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 On state drain current VGS=10V, VDS=5V 410 RDS(ON) Static Drain-Source On-Resistance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 2.2 V A 3 4.6 VGS=4.5V, ID=20A 3.4 4.3 VDS=5V, ID=20A 87 DYNAMIC PARAMETERS Ciss Input Capacitance Rg µA 3.8 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance 1.8 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A mA 0.1 2.4 Forward Transconductance Units V 20 TJ=125°C VSD Output Capacitance 0.1 VDS=0V, VGS= ±20V gFS Crss 0.025 TJ=125°C VGS=10V, ID=20A Coss Max 30 IDSS IS Typ 0.4 mΩ mΩ S 1 V 90 A 2975 3719 4463 pF 485 693 900 pF 204 340 476 pF 0.28 0.56 0.84 Ω 48 60 72 nC 20 25 30 nC 12 15 18 nC 10 14 nC 6 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 9.2 ns 10.7 ns 40 ns 12.5 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 10 13 16 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 21 26.5 32 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev 0: Oct-08 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1718 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 120 100 5V 120 4V 4.5V 80 3.5V ID(A) 100 ID (A) VDS=5V 10V 140 80 60 60 40 125°C 40 VGS=3V 20 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 6 Normalized On-Resistance 2 5 RDS(ON) (mΩ) 25°C 20 VGS=4.5V 4 3 VGS=10V 2 1 1.8 VGS=10V ID=20A 1.6 17 5 VGS=4.5V 2 ID=20A 10 1.4 1.2 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 8 1.0E+02 ID=20A 40 1.0E+01 125°C IS (A) RDS(ON) (mΩ) 6 125°C 4 1.0E+00 25°C 25°C 2 1.0E-01 1.0E-02 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AOL1718 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 5000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2000 1000 0 Crss 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 60 0 10µs RDS(ON) limited 10.0 10µs 100µs 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 1ms 10ms DC 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 TJ(Max)=175°C TC=25°C 800 Power (W) 100.0 5 1000 1000.0 ID (Amps) 3000 Coss 2 17 5 2 10 600 400 200 1 VDS (Volts) 10 100 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 4000 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1718 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 180 TA=25°C 160 Power Dissipation (W) IAR (A) Peak Avalanche Current 200 140 120 TA=100°C TA=125°C 100 80 60 TA=150°C 40 100 80 60 40 20 20 0 0 0.000001 0 120 100 100 80 80 60 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) Power (W) Current rating ID(A) 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) TA=25°C 17 5 2 10 60 40 40 20 20 0 0.01 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note F) 0.1 1 10 1000 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 100 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 1 0.1 PD Single Pulse 0.01 Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1718 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01 0.7 20A 0.6 1.0E-02 VDS=30V 10A 0.5 VSD (V) IR (A) 1.0E-03 VDS=15V 1.0E-04 0.4 5A 0.3 1.0E-05 IS=1A 0.2 1.0E-06 0.1 100 150 200 Temperature (°C) Figure 17: Diode Reverse Leakage Current vs. Junction Temperature 38 0 12 di/dt=800A/µs 36 100 150 200 Temperature (°C) Figure 18: Diode Forward voltage vs. Junction Temperature 3 16 di/dt=800A/µs 14 10 12 32 Qrr 30 8 25ºC 6 125ºC Irm 2 26 5 10 15 20 1.5 125ºC 25 S 0 0 10 20 2.5 2 4 Qrr 125ºC 15 2 5 trr 12 125º 9 25ºC 1.5 25ºC trr (ns) 6 125ºC 1 S 6 0.5 25ºC Irm 3 0 200 30 18 20 10 25 Is=20A 21 8 Irm (A) Qrr (nC) 15 24 25ºC 25 0 10 125ºC Is=20A 15 5 IS (A) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current IS (A) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 30 0.5 0 30 35 1 25ºC 2 0 0 2 8 4 28 2.5 25ºC 6 4 25ºC 125ºC trr 10 trr (ns) 125ºC Irm (A) Qrr (nC) 34 50 S 50 S 0 400 600 800 0 1000 di/dt (A/µs) Figure 21: Diode Reverse Recovery Charge and Peak Current vs. di/dt Alpha & Omega Semiconductor, Ltd. 0 0 200 400 600 800 0 1000 di/dt (A/µs) Figure 22: Diode Reverse Recovery Time and Softness Factor vs. di/dt www.aosmd.com AOL1718 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com