AON1605 20V P-Channel MOSFET General Description Product Summary The AON1605 utilize advanced trench MOSFET technology in small DFN 1.0 x 0.6 package. This device is ideal for load switch applications. ID (at VGS=-4.5V) -20V -0.7A VDS RDS(ON) (at VGS =-4.5V) < 710mΩ RDS(ON) (at VGS =-2.5V) < 930mΩ RDS(ON) (at VGS =-1.8V) < 1250mΩ Typical ESD protection HBM Class 1C DFN 1.0x0.6 Top View D Bottom View G S D G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current E Pulsed Drain Current Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient B Maximum Junction-to-Ambient B Rev 0 : Oct. 2012 Steady-State t ≤ 10s Steady-State A A -2 W 0.55 TJ, TSTG Symbol t ≤ 10s V 0.9 PD TA=70°C ±8 -0.55 IDM TA=25°C Units V -0.7 ID TA=70°C C Maximum -20 RθJA RθJA www.aosmd.com -55 to 150 Typ 80 110 200 280 °C Max 100 140 245 340 Units °C/W °C/W °C/W °C/W Page 1 of 5 AON1605 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -20 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -0.4 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -2 TJ=55°C VGS=-4.5V, ID=-0.4A TJ=125°C Static Drain-Source On-Resistance 710 835 1010 A mΩ 1115 mΩ 1 S IS=-0.4A,VGS=0V DYNAMIC PARAMETERS Input Capacitance Ciss VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg Gate Source Charge 590 VGS=-1.5V, ID=-0.1A Maximum Body-Diode Continuous Current E Qgs V 930 Diode Forward Voltage Gate resistance µA -1.1 1250 VSD Rg ±10 -0.7 745 IS Reverse Transfer Capacitance µA 955 VDS=-5V, ID=-0.4A Crss -5 VGS=-1.8V, ID=-0.2A Forward Transconductance Output Capacitance Units VGS=-2.5V, ID=-0.3A gFS Coss Max V VDS=-20V, VGS=0V IDSS RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-0.4A -0.85 mΩ mΩ -1.2 V -0.7 A 50 pF 12 pF 7.5 pF 45 Ω 0.75 nC 0.15 nC Qgd Gate Drain Charge 0.2 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 5 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-4.5V, VDS=-10V, RL=25Ω, RGEN=3Ω 22 ns 8 ns A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. B. The value of R θJA is measured with the device mounted on FR-4 minimum pad board, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it to. C. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. D. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. E. The maximum current limited by package. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Oct. 2012 www.aosmd.com Page 2 of 5 AON1605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 VDS=-5V -2.5V -4V -4.5V 1.5 1 -ID(A) 1.5 -ID (A) 2 -3V -8V -2.0V 1 125°C 0.5 0.5 25°C VGS=-1.5V 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 3 3.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1400 Normalized On-Resistance 1.6 VGS=-1.5V 1200 RDS(ON) (mΩ Ω) 0.5 VGS=-1.8V 1000 800 VGS=-2.5V 600 VGS=-1.8V ID=-5A VGS=-2.5V ID=-6A 1.4 17 VGS=-4.5V 5 ID=-8A 1.2 2 10 VGS=-4.5V ID=-8A 1 VGS=-4.5V 0.8 400 0 0.1 0 0.2 0.3 0.4 0.5 0.6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+01 1600 ID=-0.4A 1400 1.0E+00 40 125°C 1.0E-01 1000 -IS (A) RDS(ON) (mΩ Ω) 1200 125°C 800 1.0E-02 1.0E-03 600 1.0E-04 25°C 400 25°C 200 1.0E-05 0 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Oct. 2012 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON1605 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 100 VDS=-10V ID=-0.4A 80 Capacitance (pF) -VGS (Volts) 4 3 2 60 40 1 20 0 0 0 0.2 0.4 0.6 0.8 Qg (nC) Figure 7: Gate-Charge Characteristics Coss Crss 1 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 5 10.0 10µs 1.0 100µs RDS(ON) limited 1ms 10ms 0.1 DC TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 4 10µs Power (W) -ID (Amps) Ciss 17 5 2 10 3 2 1 0.0 0 0.01 0.1 1 -VDS (Volts) 10 100 0.0001 0.001 0.01 0.1 1 10 0 100 1000 Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Ambient (Note B) Figure 9: Maximum Forward Biased Safe Operating Area (Note B) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=140°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note B) Rev 0 : Oct. 2012 www.aosmd.com Page 4 of 5 AON1605 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vgs VDC td(on) tr t d(off) tf 90% Vdd + DUT - Vgs Rg toff ton Vgs 10% Vds Rev 0 : Oct. 2012 www.aosmd.com Page 5 of 5