AOSMD AON2409 30v p-channel mosfet Datasheet

AON2409
30V P-Channel MOSFET
General Description
Product Summary
The AON2409 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=-10V)
-30V
-8A
RDS(ON) (at VGS =-10V)
< 32mΩ
RDS(ON) (at VGS =-4.5V)
< 53mΩ
VDS
DFN 2x2B
Top View
S
Bottom View
D
D
D
D
S
Pin 1
D
G
Pin 1
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current G
VGS
TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev 1 : Nov 2011
Steady-State
A
2.8
W
1.8
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
V
-32
PD
TA=70°C
±20
-6.3
IDM
TA=25°C
Power Dissipation A
Units
V
-8
ID
TA=70°C
Maximum
-30
RθJA
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Typ
37
66
°C
Max
44
79
Units
°C/W
°C/W
Page 1 of 5
AON2409
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-1.1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-32
TJ=55°C
nA
V
26.5
32
33.6
41
VGS=-4.5V, ID=-6A
42
53
20
TJ=125°C
Forward Transconductance
VDS=-5V, ID=-8A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
Reverse Transfer Capacitance
Gate resistance
µA
-2.3
gFS
Rg
-5
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-1.75
VGS=-10V, ID=-8A
Coss
Max
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
A
-0.7
mΩ
S
-1
V
3.5
A
530
pF
114
pF
75
VGS=0V, VDS=0V, f=1MHz
mΩ
pF
Ω
11
22
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
12
14.5
nC
Qg(4.5V) Total Gate Charge
6
7.5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=-10V, VDS=-15V, ID=-8A
VGS=-10V, VDS=-15V, RL=1.8Ω,
RGEN=3Ω
1.8
nC
3
nC
7.7
ns
5.5
ns
26.3
ns
tf
Turn-Off Fall Time
11.5
ns
trr
Body Diode Reverse Recovery Time
IF=-8A, dI/dt=500A/µs
12.2
Qrr
Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs
25.4
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1 : Nov 2011
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Page 2 of 5
AON2409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
-4.5V
-10V
VDS=-5V
-4V
15
15
-ID(A)
-ID (A)
-6V
10
-3.5V
10
125°C
25°C
5
5
VGS=-3.0V
0
0
0
1
2
3
4
0
5
70
3
4
5
6
Normalized On-Resistance
1.4
60
RDS(ON) (mΩ
Ω)
2
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-4.5V
50
40
30
20
VGS=-10V
VGS=-10V
ID=-8A
1.2
VGS=-4.5V
ID=-6A
1
0.8
10
0
0
5
10
15
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.0E+02
90
80
1.0E+01
-IS (A)
ID=-8A
70
RDS(ON) (mΩ
Ω)
1
60
1.0E+00
1.0E-01
50
125°C
125°C
1.0E-02
40
25°C
1.0E-03
30
25°C
1.0E-04
20
10
1.0E-05
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Nov 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
AON2409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=-15V
ID=-8A
8
Ciss
Capacitance (pF)
-VGS (Volts)
600
6
4
400
Coss
200
2
0
Crss
0
0
5
10
Qg (nC)
Figure 7: Gate-Charge Characteristics
15
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100.0
TA=25°C
10µs
10µs
RDS(ON)
limited
100µs
1ms
1.0
10ms
TJ(Max)=150°C
TC=25°C
0.1
1000
Power (W)
10.0
-ID (Amps)
30
100
DC
10
0.0
0.01
0.1
1
-VDS (Volts)
10
1
100
0.00001
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Ambient
(Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
RθJA=79°C/W
0.1
Single Pulse
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 1: Nov 2011
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Page 4 of 5
AON2409
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 1: Nov 2011
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5
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