AOSMD AON3613 30v complementary mosfet Datasheet

AON3613
30V Complementary MOSFET
General Description
Product Summary
The AON3613 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs may be used in inverter and
other applications.
N-channel
P-channel
VDS (V) = 30V
VDS (V) = -30V
ID = 4.5A
ID = -4.5A
(VGS = ±10V)
RDS(ON) < 52mΩ
RDS(ON) < 68mΩ
(VGS = ±10V)
RDS(ON) < 60mΩ
RDS(ON) < 100mΩ
(VGS = ±4.5V)
ESD protection
HBM Class 3A
D1
D2
DFN 3x3
Top View
Top View
Bottom View
S2
G2
D2
S1
D1
G1
D1
D2
G2
G1
S2
N-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max N-channel
Drain-Source Voltage
VDS
30
Gate-Source Voltage
Continuous Drain
Current
TA=70°C
Pulsed Drain Current
C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics: N-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D Steady-State
Steady-State
Maximum Junction-to-Lead
Thermal Characteristics: P-channel
Parameter
t ≤ 10s
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D Steady-State
Steady-State
Maximum Junction-to-Lead
Rev 1: Sep. 2012
Units
V
±12
±20
V
4.5
-4.5
3.5
-3.5
20
-20
2.1
2.1
1.3
1.3
TJ, TSTG
-55 to 150
-55 to 150
°C
Symbol
Typ
50
80
30
Max
60
100
40
Units
°C/W
°C/W
°C/W
Typ
50
80
30
Max
60
100
40
Units
°C/W
°C/W
°C/W
ID
IDM
TA=25°C
B
Max P-channel
-30
VGS
TA=25°C
S1
P-channel
PD
RθJA
RθJL
Symbol
RθJA
RθJL
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A
W
Page 1 of 9
AON3613
N-channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
±10
µA
1.05
1.5
V
42
52
66
82
VGS=4.5V, ID=3A
47
60
mΩ
15
1
V
2.5
A
Gate-Body leakage current
VDS=0V, VGS=±10V
VDS=VGS, ID=250µA
0.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
VGS=10V, ID=4.5A
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=4.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate Threshold Voltage
Output Capacitance
Units
V
1
VGS(th)
Coss
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
A
0.75
mΩ
S
245
pF
VGS=0V, VDS=15V, f=1MHz
35
pF
20
pF
VGS=0V, VDS=0V, f=1MHz
5.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.7
10
nC
Qg(4.5V) Total Gate Charge
2.6
5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=4.5A
0.5
nC
1
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=4.5A, dI/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=500A/µs
7.5
VGS=10V, VDS=15V, RL=3.3Ω,
RGEN=3Ω
2
ns
3.5
ns
22
ns
3.5
ns
6.5
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Sep. 2012
www.aosmd.com
Page 2 of 9
AON3613
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
10V
VDS=5V
4.5V
15
15
ID(A)
ID (A)
2.5V
10
10
125°C
VGS=2V
5
25°C
5
0
0
0
1
2
3
4
0
5
80
2
3
4
Normalized On-Resistance
1.8
60
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
40
VGS=10V
20
1.6
VGS=10V
ID=4.5A
1.4
17
5
2
VGS=4.5V
10
ID=3A
1.2
1
0.8
0
0
2
0
4
6
8
10
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
120
1.0E+01
ID=4.5A
2.1
1.0E+00
100
2.5
1.6
1.3
IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
125°C
80
125°C
1.0E-02
60
1.0E-03
40
25°C
1.0E-04
25°C
1.0E-05
20
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Sep. 2012
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 9
AON3613
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
VDS=15V
ID=4.5A
350
8
Capacitance (pF)
VGS (Volts)
300
6
4
Ciss
250
200
150
100
Coss
2
50
0
Crss
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
100
TA=25°C
ID (Amps)
RDS(ON)
limited
100µs
1
1ms
10ms
100ms
10s
DC
TJ(Max)=150°C
TA=25°C
0.1
Power (W)
10µs
10
100
10
0.01
1
0.01
0.1
1
VDS (Volts)
10
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
2.1
1.3
RθJA=100°C/W
2.5
1.6
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Sep. 2012
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Page 4 of 9
AON3613
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev 1: Sep. 2012
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 9
AON3613
P-channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-1.3
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-20
nA
-2.3
V
56
68
79
96
VGS=-4.5V, ID=-3A
80
100
mΩ
8
-1
V
-2.5
A
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-4.5A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-1.8
VGS=-10V, ID=-4.5A
Coss
Max
V
VDS=-30V, VGS=0V
VGS(th)
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
A
-0.78
mΩ
S
290
pF
60
pF
40
pF
16
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.8
10
nC
Qg(4.5V) Total Gate Charge
2.8
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=-10V, VDS=-15V, ID=-4.5A
1.1
nC
1.3
nC
6
ns
VGS=-10V, VDS=-15V, RL=3.3Ω,
RGEN=3Ω
5
ns
21
ns
9
ns
IF=-4.5A, dI/dt=500A/µs
10
Body Diode Reverse Recovery Charge IF=-4.5A, dI/dt=500A/µs
20
ns
nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Sep. 2012
www.aosmd.com
Page 6 of 9
AON3613
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
10
-10V
-6V
VDS=-5V
8
-4.5V
6
-4V
10
-ID(A)
-ID (A)
15
4
125°C
-3.5V
5
2
25°C
VGS=-3V
0
0
0
1
2
3
4
1
5
120
3
4
5
Normalized On-Resistance
1.6
100
RDS(ON) (mΩ
Ω)
2
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=-4.5V
80
60
40
VGS=-10V
VGS=-10V
ID=-4.5A
1.4
1.2
VGS=-4.5V
ID=-3A
1
17
5
2
10
0.8
20
0
2
0
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
220
1.0E+01
ID=-4.5A
2.1
1.0E+00
180
2.5
1.6
1.3
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E-01
140
125°C
125°C
1.0E-02
100
25°C
1.0E-03
60
1.0E-04
25°C
1.0E-05
20
2
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 1: Sep. 2012
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 9
AON3613
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
VDS=-15V
ID=-4.5A
350
Ciss
8
Capacitance (pF)
-VGS (Volts)
300
6
4
250
200
150
Coss
100
2
50
0
Crss
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs
RDS(ON)
limited
100
100µs
1.0
Power (W)
-ID (Amps)
10.0
1ms
0.1
10ms
100ms
10s
DC
TJ(Max)=150°C
TA=25°C
10
0.0
1
0.01
0.1
1
-VDS (Volts)
10
100
0.00001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
2.1
1.3
RθJA=100°C/W
2.5
1.6
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 1: Sep. 2012
www.aosmd.com
Page 8 of 9
AON3613
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
Qgd
+
+
DUT
Qgs
Vds
VDC
Vgs
Ig
Charge
R e s is tiv e S w itc h in g T e s t C irc u it & W a v e fo rm s
RL
Vds
t o ff
to n
td (o n )
Vgs
-
DUT
Vgs
t d (o ff)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
D iode R e covery Te st C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
Vds -
Isd
V gs
Ig
Rev 1: Sep. 2012
L
-Isd
+ V dd
t rr
dI/dt
-I R M
V dd
VDC
-
-I F
-Vds
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Page 9 of 9
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