AOSMD AON6522 25v n-channel alphamo Datasheet

AON6522
25V N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
Application
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
VDS
ID (at VGS=10V)
25V
200A
RDS(ON) (at VGS=10V)
< 0.95mΩ
RDS(ON) (at VGS = 4.5V)
< 1.3mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
C
V
A
450
71
IDSM
TA=70°C
±20
151
IDM
TA=25°C
Continuous Drain
Current
Units
V
200
ID
TC=100°C
Maximum
25
A
57
IAS
50
A
Avalanche energy L=0.1mH C
EAS
125
mJ
VDS Spike
VSPIKE
36
V
Avalanche Current
Power Dissipation B
100ns
TC=25°C
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: Jan 2012
7.3
Steady-State
Steady-State
RθJA
RθJC
W
4.7
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
-55 to 150
Typ
14
40
1
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°C
Max
17
55
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6522
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
VGS=4.5V, ID=20A
gFS
Forward Transconductance
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qg(4.5V) Total Gate Charge
Gate Source Charge
Qgd
tD(on)
100
nA
1.4
2
V
0.75
0.95
1.1
1.4
1
1.3
mΩ
1
V
100
A
100
0.7
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
0.5
mΩ
S
7036
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
µA
5
1
Units
V
1
TJ=55°C
IGSS
Max
25
VDS=25V, VGS=0V
VGS(th)
Coss
Typ
pF
2778
pF
353
pF
1.1
1.7
Ω
107
145
nC
49.7
68
nC
11.7
nC
Gate Drain Charge
21.4
nC
Turn-On DelayTime
12.3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
12.8
ns
68.5
ns
tf
Turn-Off Fall Time
28.8
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=20A, dI/dt=500A/µs
31
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
106
ns
nC
VGS=10V, VDS=15V, RL=0.75Ω,
RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jan 2012
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Page 2 of 6
AON6522
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
4.5V
80
VDS=5V
80
3V
2.5V
10V
60
ID(A)
ID (A)
60
40
40
20
20
125°C
25°C
VGS=2V
0
0
0
1
2
3
4
0.0
5
2.0
1.0
1.5
2.0
2.5
3.0
Normalized On-Resistance
1.6
1.5
RDS(ON) (mΩ
Ω)
0.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
1.0
0.5
VGS=10V
0.0
VGS=10V
ID=20A
1.4
1.2
1
VGS=4.5V
ID=20A
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
2
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1.00E+02
ID=20A
1.00E+01
1.00E+00
125°C
125°C
1.00E-01
IS (A)
RDS(ON) (mΩ
Ω)
1.5
1
25°C
1.00E-02
1.00E-03
0.5
25°C
1.00E-04
1.00E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Jan 2012
4
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0
0.2
0.4
0.6
0.8
1
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6522
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
10000
Ciss
8000
Capacitance (pF)
8
VGS (Volts)
9000
VDS=15V
ID=20A
6
4
2
7000
6000
5000
4000
3000
Coss
2000
1000
0
0
20
40
60
80
100
Qg (nC)
Figure 7: Gate-Charge Characteristics
120
0
RDS(ON)
limited
10µs
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
100µs
10.0
1ms
DC
1.0
TJ(Max)=150°C
TC=25°C
0.1
400
10µs
Power (W)
100.0
5
30
500
1000.0
ID (Amps)
Crss
0
TJ(Max)=150°C
TC=25°C
300
200
100
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
(Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.5°C/W
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jan 2012
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Page 4 of 6
AON6522
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
200
Current rating ID(A)
250
Power Dissipation (W)
100
60
40
20
150
100
50
0
0
0
25
50
75
100
125
TCASE (°
°C)
Figure 12: Power De-rating (Note F)
150
0
25
50
75
100
125
TCASE (°
°C)
Figure 13: Current De-rating (Note F)
150
10000
TA=25°C
Power (W)
1000
100
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=55°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Jan 2012
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Page 5 of 6
AON6522
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Jan 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6
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