AOSMD AON7403L P-channel enhancement mode field effect transistor Datasheet

AON7403
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AON7403/L uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate
charge with a 25V gate rating. This device is suitable
for use as a load switch or in PWM applications.
AON7403 and AON7403L are electrically identical.
-RoHS Compliant
-AON7403L is Halogen Free
VDS (V) = -30V
(VGS = -10V)
ID = -8A
RDS(ON) < 18mΩ (VGS = -10V)
RDS(ON) < 36mΩ (VGS = -4.5V)
DFN 3x3
Top View
Bottom View
D
S
S
S
G
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current B,G
C
TA=70°C
B
A
V
A
27
11
Junction and Storage Temperature Range
1
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
1.6
PDSM
TA=70°C
Alpha & Omega Semiconductor, Ltd.
±25
-6
PD
TC=100°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case D
Units
V
-80
IDSM
TA=25°C
Power Dissipation
Maximum
-30
-8
TC=25°C
Power Dissipation
S
-20
ID
IDM
TA=25°C
Continuous Drain
Current
G
-20
TC=100°C
Pulsed Drain Current
D
D
D
D
RθJA
RθJC
Typ
30
60
4
°C
Max
40
75
4.5
Units
°C/W
°C/W
°C/W
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AON7403
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.7
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-80
TJ=55°C
VGS=-10V, ID=-8A
TJ=125°C
Static Drain-Source On-Resistance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
V
14
18
A
VDS=-5V, ID=-10A
21
-0.7
1130
VGS=0V, VDS=-15V, f=1MHz
mΩ
S
-1
V
-3
A
1400
pF
240
pF
155
pF
Ω
VGS=0V, VDS=0V, f=1MHz
5.8
8
18
24
VGS=-10V, VDS=-15V, ID=-8A
5.5
nC
3.3
nC
Gate Drain Charge
tD(on)
-3
36
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
-2.2
25
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
µA
nA
26
VSD
Units
±100
20
Forward Transconductance
Coss
-5
VGS=-4.5V, ID=-6A
gFS
IS
Max
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
nC
8.7
ns
VGS=-10V, VDS=-15V, RL=1.8Ω,
RGEN=3Ω
8.5
ns
18
ns
IF=-8A, dI/dt=500A/µs
12
7
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs
ns
16
26
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating I DSM are
based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation PD is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
150
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C.
The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Rev0: Jun 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AON7403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
VDS=-5V
-10V
-8V
60
60
-ID(A)
-ID (A)
-6V
40
40
-4.5V
20
20
125°C
VGS=-4V
25°C
0
0
0
1
2
3
4
5
0
1
3
4
5
6
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Figure 1: On-Region Characteristics
40
1.8
Normalized On-Resistance
35
RDS(ON) (mΩ)
2
VGS=-4.5V
30
25
20
`V =-10V
GS
15
VGS=-10V
ID=-8A
1.6
1.4
VGS=-4.5V
ID=-6A
1.2
1
10
0
5
10
15
20
0.8
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
10
50
150
ID=-8A
1
40
125°C
-IS (A)
RDS(ON) (mΩ)
0.1
30
125°C
25°C
0.01
0.001
20
0.0001
25°C
0.00001
10
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AON7403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1500
10
VDS=-15V
ID=-8A
1200
Capacitance (pF)
-VGS (Volts)
8
6
VDS=VGS ID=1mA
4
Ciss
900
600
2
300
0
0
0
5
10
15
20
1.4
50
Coss
Crss
0
5
1000.0
50
100.0
40
10µs
100µs
10.0
RDS(ON)
limited
10ms
100m
10s
DC
TJ(Max)=150°C
TA=25°C
0.1
1
10
ZθJA Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
800
140
80
0.5
20
25
30
220
140
TJ(Max)=150°C
TA=25°C
15
7
30
20
0
0.001
100
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
15
10
0.0
0.1
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
Qg (nC)
Figure 7: Gate-Charge Characteristics
1.0
1.8
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD NOT ASSUME ANY LIABILITY ARISING
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
OUT OF SUCH
Ton
Single Pulse
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
Alpha & Omega Semiconductor, Ltd.
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