AOSMD AON7450 100v n-channel mosfet Datasheet

AON7450
100V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
The AON7450 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge and low Qrr.The result is outstanding efficiency
with controlled switching behavior. This universal
technology is well suited for PWM, load switching and
general purpose applications.
VDS
ID (at VGS=10V)
100V
21A
RDS(ON) (at VGS=10V)
< 48mΩ
RDS(ON) (at VGS = 8V)
< 57mΩ
100% UIS Tested
100% Rg Tested
DFN 3x3 EP
Top View
D
Top View
Bottom
1
8
2
7
3
6
4
5
G
S
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
TA=25°C
±25
V
13
IDM
A
60
5.6
IDSM
TA=70°C
Units
V
21
ID
TC=100°C
Maximum
100
A
4.5
Avalanche Current C
IAS, IAR
18
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
16
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 2: Mar. 2011
3.1
Steady-State
Steady-State
RθJA
RθJC
W
2
TJ, TSTG
Symbol
t ≤ 10s
W
17
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
43
PD
TC=100°C
-55 to 150
Typ
30
60
2.4
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°C
Max
40
75
2.9
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON7450
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
10
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2.9
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
TJ=55°C
50
VDS=0V, VGS= ±25V
100
VGS=10V, ID=7.8A
3.5
40
48
73
87
VGS=8V, ID=7.8A
45
57
VDS=5V, ID=7.8A
20
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
Maximum Body-Diode Continuous Current
G
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
4.1
µA
nA
V
A
RDS(ON)
TJ=125°C
Units
V
VDS=100V, VGS=0V
IDSS
IS
Max
mΩ
mΩ
S
1
V
40
A
pF
725
910
1090
65
95
125
pF
20
35
50
pF
VGS=0V, VDS=0V, f=1MHz
0.4
0.8
1.2
Ω
12
16
20
nC
VGS=10V, VDS=50V, ID=7.8A
4.2
5.3
6.4
nC
2.8
4.7
6.6
nC
VGS=0V, VDS=50V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=7.8A, dI/dt=500A/µs
12
17
22
Qrr
Body Diode Reverse Recovery Charge IF=7.8A, dI/dt=500A/µs
42
60
78
18
VGS=10V, VDS=50V, RL=6.4Ω,
RGEN=3Ω
ns
6.5
ns
35
ns
7
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Mar. 2011
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Page 2 of 7
AON7450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
36
8.5V
7V
8V
10V
28
24
40
ID(A)
6.5
ID (A)
VDS=5V
32
7.5V
50
30
6V
20
16
12
125°C
8
VGS=5.5V
10
20
4
0
0
0
1
2
3
4
5
6
7
8
9
0
10
2
70
6
8
10
Normalized On-Resistance
2.2
60
VGS=8V
RDS(ON) (mΩ )
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
40
VGS=10V
30
2
VGS=10V
ID=7.8A
1.8
1.6
1.4
VGS=8V
ID=7.8A
1.2
17
5
2
10
1
0.8
20
0
5
0
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
90
1.0E+02
ID=7.8A
80
1.0E+01
40
70
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ )
25°C
60
125°C
1.0E-01
50
25°C
1.0E-02
40
1.0E-03
25°C
30
1.0E-04
20
0.0
4
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 2: Mar. 2011
8
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0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON7450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1400
10
VDS=50V
ID=7.8A
1200
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1000
800
600
400
Coss
2
Crss
200
0
0
0
3
6
9
12
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
18
0
40
60
80
100
VDS (Volts)
Figure 8: Capacitance Characteristics
200
1000.0
10µs
10µs
RDS(ON)
limited
10.0
100µs
DC
1.0
1ms
160
Power (W)
100.0
ID (Amps)
20
TJ(Max)=150°C
TC=25°C
0.1
TJ(Max)=150°C
TC=25°C
17
5
2
10
120
80
40
0.0
0
0.01
0.1
1
10
VDS (Volts)
100
1000
0.0001
0.001
0.01
0.1
1
0
10
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=2.9°C/W
40
Zθ JC Normalized Transient
Thermal Resistance
10
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Mar. 2011
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Page 4 of 7
AON7450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
TA=25°C
TA=100°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
100
10
TA=150°C
TA=125°C
40
30
20
10
1
0
1
10
100
µs)
Time in avalanche, tA (µ
Figure 12: Single Pulse Avalanche capability (Note
C)
0
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
30
TA=25°C
25
1000
Power (W)
Current rating ID(A)
25
20
15
10
17
5
2
10
100
10
5
1
0.00001
0
0
25
50
75
100
125
0.001
0.1
10
1000
0
18
150
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 2: Mar. 2011
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Page 5 of 7
AON7450
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30.00
80
25.00
20
20.00
16
25ºC
Qrr
15.00
60
125ºC
Irm
40
1.6
1.2
trr
25ºC
12
10.00
0.8
8
25ºC
S
25ºC
20
5.00
4
0
0.00
0
0.4
125ºC
0
5
10
15
20
25
30
0
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
120
100
5
10
15
20
25
30
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
25.00
Is=20A
30
2.5
Is=20A
125ºC
25
20.00
80
2
125ºC
20
10.00
125ºC
40
trr
trr (ns)
1
10
Qrr
5.00
25ºC
20
25ºC
125º
0
0.00
200
400
600
800
1000
0
0
0
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 2: Mar. 2011
0.5
S
5
Irm
0
1.5
25ºC
15
S
15.00
25ºC
60
Irm (A)
Qrr (nC)
125ºC
trr (ns)
Qrr (nC)
100
Irm (A)
120
24
di/dt=800A/µs
125ºC
di/dt=800A/µs
S
140
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200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 6 of 7
AON7450
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 2: Mar. 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7
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