AOSMD AOT1100L 100v n-channel rugged planar mosfet Datasheet

AOT1100L/AOB1100L
100V N-Channel Rugged Planar MOSFET
General Description
Product Summary
The AOT1100L/AOB1100L uses a robust technology that
is designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low RDS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.This device is ideal for boost converters and
synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
VDS
100V
ID (at VGS=10V)
130A
RDS(ON) (at VGS=10V)
< 12mΩ
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
Top View
D
D
G
D
D
D
S
S
D
G
G
S
G
G
AOT1100
Gate-Source Voltage
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
TA=25°C
Units
V
±20
V
92
A
208
IDM
8
IDSM
TA=70°C
Maximum
100
130
ID
TC=100°C
S
S
AOB1100
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain
Current G
D
Bottom View
A
6
Avalanche Current C
IAS
122
A
Avalanche energy L=0.1mH C
TC=25°C
EAS
744
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev0: Dec 2011
2.1
Steady-State
Steady-State
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
250
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
500
PD
TC=100°C
-55 to 175
Typ
12
48
0.22
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°C
Max
15
60
0.3
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOT1100L/AOB1100L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
100
1
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µΑ
2.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
208
VGS=10V, ID=20A
TO220
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VGS=10V, ID=20A
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
VGS=10V, VDS=50V, ID=20A
0.5
Units
µA
5
IGSS
RDS(ON)
Max
V
VDS=100V, VGS=0V
VGS(th)
Coss
Typ
100
nA
3.2
3.8
V
10
12
19
22
9.7
53
11.7
mΩ
S
0.69
1
V
130
A
A
mΩ
4833
pF
721
pF
35
pF
1.1
1.7
Ω
82
100
nC
Qgs
Gate Source Charge
23
nC
Qgd
Gate Drain Charge
19
nC
tD(on)
Turn-On DelayTime
21
ns
tr
Turn-On Rise Time
22
ns
tD(off)
Turn-Off DelayTime
50
ns
tf
Turn-Off Fall Time
4.5
ns
ns
nC
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
64
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
880
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C. Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec 2011
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Page 2 of 6
AOT1100L/AOB1100L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
10V
80
80
6V
60
ID (A)
ID (A)
60
5V
40
20
40
20
VGS=4.5V
125°C
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
0
1
2
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
6
2.8
Normalized On-Resistance
14
12
RDS(ON) (mΩ
Ω)
25°C
VGS=10V
10
8
6
2.4
VGS=10V
ID=20A
2.0
17
5
2
10
1.6
1.2
0.8
0
8
16
24
32
40
0
25
50
75
100
125
150
175
200
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Temperature (°C)
18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
1E+02
24
ID=20A
1E+01
20
40
125°C
125°C
16
IS (A)
RDS(ON) (mΩ
Ω)
1E+00
1E-01
25°C
1E-02
12
1E-03
25°C
8
1E-04
4
1E-05
2.0
6.0
8.0
10.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev0: Dec 2011
4.0
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT1100L/AOB1100L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
100000
VDS=50V
ID=20A
6
4
2
1000
Coss
100
Crss
10
0
1
0
15
30
45
60
75
Qg (nC)
Figure 7: Gate-Charge Characteristics
90
0
1000.0
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
40
9000
10.0
DC
1ms
10ms
1.0
TJ(Max)=175°C
TC=25°C
7500
10µs
10µs
100µs
RDS(ON)
limited
Power (W)
100.0
ID (Amps)
Ciss
10000
Capacitance (pF)
VGS (Volts)
8
6000
17
5
2
10
4500
3000
0.1
1500
TJ(Max)=175°C
TC=25°C
0
0.0
0.01
0.1
1
10
100
1000
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
0.0001
0.001
0.01
0.1
1
0
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to18
Case (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.3°C/W
40
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
Rev0: Dec 2011
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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1
10
Page 4 of 6
AOT1100L/AOB1100L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
Power Dissipation (W)
IAR (A) Peak Avalanche Current
160
120
TA=25°C
TA=100°C
TA=150°C
80
TA=125°C
40
400
300
200
100
0
0
1
0
10
100
1000
10000
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
150
TCASE (°°C)
Figure 13: Power De-rating (Note F)
175
10000
150
TA=25°C
120
1000
Power (W)
Current rating ID(A)
500
90
60
17
5
2
10
100
10
30
0
1
0
25
50
75
100
125
150
175
TCASE (°°C)
Figure 14: Current De-rating (Note F)
1
100 0
10000
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.0001
0.01
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=60°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.01
Rev0: Dec 2011
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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100
1000
Page 5 of 6
AOT1100L/AOB1100L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev0: Dec 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6
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