AOU454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOU454 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU454 is Pb-free (meets ROHS & Sony 259 specifications). AOU454L is a Green Product ordering option. AOU454 and AOU454L are electrically identical. VDS (V) = 40V ID = 12 A (VGS = 10V) RDS(ON) < 33 mΩ (VGS = 10V) RDS(ON) < 47 mΩ (VGS = 4.5V) TO-251 D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current G C C Repetitive avalanche energy L=0.1mH C TC=25°C Power Dissipation B Junction and Storage Temperature Range V A 12 IAR 12 A EAR 20 mJ 30 20 W 10 TJ, TSTG Thermal Characteristics Parameter Alpha & Omega Semiconductor, Ltd. ±20 ID IDM PD TC=100°C Maximum Junction-to-Ambient A Maximum Junction-to-Case B Units V 12 TC=100°C Pulsed Drain Current Avalanche Current Maximum 40 °C -55 to 175 Steady-State Symbol RθJA Steady-State RθJC Typ Max Units 50 4 60 7.5 °C/W °C/W AOU454 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=10mA, VGS=0V Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 VGS=10V, ID=12A TJ=125°C VGS=4.5V, ID=6A gFS Forward Transconductance IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current IS VDS=5V, ID=12A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge V VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=12A µA 5 IGSS VSD Units 1 TJ=55°C Static Drain-Source On-Resistance Max 40 VDS=32V, VGS=0V VGS(th) RDS(ON) Typ ±100 nA 2.3 3 V 25 33 39 52 34 47 mΩ 1 V 12 A A mΩ 25 0.76 S 404 pF 95 pF 37 pF 2.7 Ω 9.2 nC 4.5 nC Qgs Gate Source Charge 1.6 nC Qgd Gate Drain Charge 2.6 nC tD(on) Turn-On DelayTime 3.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=20V, RL=1.7Ω, RGEN=3Ω 6 ns 13.2 ns 3.5 ns trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs 22.9 Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs 18.3 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOU454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 10V 5V VDS=5V 25 4.5V 15 20 ID(A) ID (A) 4V 15 10 125°C 10 5 VGS=3.5V 5 25°C 0 0 0 1 2 3 4 2 5 2.5 50 3.5 4 4.5 1.8 40 Normalized On-Resistance 45 RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics VGS=4.5V 35 30 VGS=10V 25 VGS=10V ID=12A 1.6 1.4 VGS=4.5V ID=6A 1.2 1 20 0 4 8 12 16 20 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100 1.0E+01 ID=12A 90 1.0E+00 125°C 80 1.0E-01 125°C IS (A) RDS(ON) (mΩ) 70 60 50 1.0E-02 25°C 1.0E-03 40 30 1.0E-04 25°C 20 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOU454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 700 10 Capacitance (pF) VGS (Volts) 600 VDS=20V ID=12A 8 6 4 Ciss 500 400 300 Coss 200 Crss 2 100 0 0 2 4 6 8 0 10 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10µs 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 160 ID (Amps) 1ms 10ms 1.0 40 TJ(Max)=175°C TA=25°C 100µs Power (W) 10.0 10 200 TJ(Max)=175°C, TA=25°C RDS(ON) limited 5 120 80 DC 40 0 0.1 0.0001 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=7.5°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 10 100 AOU454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 L ⋅ ID tA = BV − VDD 12 10 Power Dissipation (W) ID(A), Peak Avalanche Current 14 8 6 4 TA=25°C 15 10 5 2 0 0 0.00001 0.0001 0.001 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 12 10 8 6 4 2 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note B) 14 Current rating ID(A) 20 175 175