AOSMD AOU454L N-channel enhancement mode field effect transistor Datasheet

AOU454
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOU454 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in PWM, load
switching and general purpose applications. Standard
Product AOU454 is Pb-free (meets ROHS & Sony
259 specifications). AOU454L is a Green Product
ordering option. AOU454 and AOU454L are
electrically identical.
VDS (V) = 40V
ID = 12 A (VGS = 10V)
RDS(ON) < 33 mΩ (VGS = 10V)
RDS(ON) < 47 mΩ (VGS = 4.5V)
TO-251
D
Top View
Drain Connected
to Tab
G
S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
TC=25°C
Continuous Drain
Current G
C
C
Repetitive avalanche energy L=0.1mH
C
TC=25°C
Power Dissipation B
Junction and Storage Temperature Range
V
A
12
IAR
12
A
EAR
20
mJ
30
20
W
10
TJ, TSTG
Thermal Characteristics
Parameter
Alpha & Omega Semiconductor, Ltd.
±20
ID
IDM
PD
TC=100°C
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
Units
V
12
TC=100°C
Pulsed Drain Current
Avalanche Current
Maximum
40
°C
-55 to 175
Steady-State
Symbol
RθJA
Steady-State
RθJC
Typ
Max
Units
50
4
60
7.5
°C/W
°C/W
AOU454
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=10mA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
1
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
VGS=10V, ID=12A
TJ=125°C
VGS=4.5V, ID=6A
gFS
Forward Transconductance
IS=1A, VGS=0V
Diode Forward Voltage
Maximum Body-Diode Continuous Current
IS
VDS=5V, ID=12A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
V
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=20V, ID=12A
µA
5
IGSS
VSD
Units
1
TJ=55°C
Static Drain-Source On-Resistance
Max
40
VDS=32V, VGS=0V
VGS(th)
RDS(ON)
Typ
±100
nA
2.3
3
V
25
33
39
52
34
47
mΩ
1
V
12
A
A
mΩ
25
0.76
S
404
pF
95
pF
37
pF
2.7
Ω
9.2
nC
4.5
nC
Qgs
Gate Source Charge
1.6
nC
Qgd
Gate Drain Charge
2.6
nC
tD(on)
Turn-On DelayTime
3.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=10V, VDS=20V, RL=1.7Ω,
RGEN=3Ω
6
ns
13.2
ns
3.5
ns
trr
Body Diode Reverse Recovery Time
IF=12A, dI/dt=100A/µs
22.9
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
18.3
ns
nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T J(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
Rev 0 : Aug 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AOU454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
30
10V
5V
VDS=5V
25
4.5V
15
20
ID(A)
ID (A)
4V
15
10
125°C
10
5
VGS=3.5V
5
25°C
0
0
0
1
2
3
4
2
5
2.5
50
3.5
4
4.5
1.8
40
Normalized On-Resistance
45
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=4.5V
35
30
VGS=10V
25
VGS=10V
ID=12A
1.6
1.4
VGS=4.5V
ID=6A
1.2
1
20
0
4
8
12
16
20
0.8
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
1.0E+01
ID=12A
90
1.0E+00
125°C
80
1.0E-01
125°C
IS (A)
RDS(ON) (mΩ)
70
60
50
1.0E-02
25°C
1.0E-03
40
30
1.0E-04
25°C
20
1.0E-05
10
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics
1.2
AOU454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
700
10
Capacitance (pF)
VGS (Volts)
600
VDS=20V
ID=12A
8
6
4
Ciss
500
400
300
Coss
200
Crss
2
100
0
0
2
4
6
8
0
10
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
100.0
10µs
15
20
25
30
35
VDS (Volts)
Figure 8: Capacitance Characteristics
160
ID (Amps)
1ms
10ms
1.0
40
TJ(Max)=175°C
TA=25°C
100µs
Power (W)
10.0
10
200
TJ(Max)=175°C, TA=25°C
RDS(ON)
limited
5
120
80
DC
40
0
0.1
0.0001
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=7.5°C/W
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
10
100
AOU454
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
L ⋅ ID
tA =
BV − VDD
12
10
Power Dissipation (W)
ID(A), Peak Avalanche Current
14
8
6
4
TA=25°C
15
10
5
2
0
0
0.00001
0.0001
0.001
Time in avalanche, t A (s)
Figure 12: Single Pulse Avalanche capability
12
10
8
6
4
2
0
0
25
50
75
100
125
150
TCASE (°C)
Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
0
25
50
75
100
125
150
TCASE (°C)
Figure 13: Power De-rating (Note B)
14
Current rating ID(A)
20
175
175
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