AOW482 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOW482 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. VDS ID (at VGS=10V) 80V 105A RDS(ON) (at VGS=10V) < 7.2mΩ RDS(ON) (at VGS = 7V) < 9mΩ 100% UIS Tested 100% Rg Tested TO-262 Top View D Bottom View G G D S S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current V A 330 11 IDSM TA=70°C ±25 82 IDM TA=25°C Units V 105 ID TC=100°C Maximum 80 A 9 Avalanche Current C IAS, IAR 82 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 336 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Rev0: June 2010 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 167 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 333 PD -55 to 175 Typ 11 47 0.36 www.aosmd.com °C Max 15 60 0.45 Units °C/W °C/W °C/W Page 1 of 7 AOW482 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Min ID=250µA, VGS=0V Typ Max Units 80 V VDS=80V, VGS=0V 10 IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 330 TJ=55°C 50 VGS=10V, ID=20A TJ=125°C µA 100 nA 3.1 3.7 V 5.9 7.2 11 13 A mΩ RDS(ON) Static Drain-Source On-Resistance Forward Transconductance VDS=5V, ID=20A 6.8 50 9 gFS mΩ S VSD Diode Forward Voltage IS=1A,VGS=0V 0.64 1 V 105 A IS VGS=7V, ID=20A Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs VGS=10V, VDS=40V, ID=20A Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 3240 4054 4870 pF 320 458 600 pF 95 160 225 pF 0.2 0.45 0.7 Ω 53 66.8 81 nC 16 20.8 25 nC 12 20.2 30 nC VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω 26 ns 18 ns 48 ns 21 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 18 26 34 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 75 108 140 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: June 2010 www.aosmd.com Page 2 of 7 AOW482 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 7V 6V 80 80 60 ID(A) ID (A) 60 5.5V 40 40 125°C 20 20 VGS=5V 25°C 0 0 0 1 2 3 4 3 5 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12 6 7 Normalized On-Resistance 2.4 10 RDS(ON) (mΩ ) 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VGS=7V 8 6 VGS=10V 4 2.2 VGS=10V ID=20A 2 1.8 1.6 1.4 VGS=7V ID=20A 1.2 1 17 5 2 10 0.8 2 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 16 1.0E+02 ID=20A 1.0E+01 40 125°C 12 10 8 125°C 1.0E+00 IS (A) RDS(ON) (mΩ ) 14 25°C 1.0E-01 1.0E-02 25°C 6 1.0E-03 4 1.0E-04 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev0: June 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 7 AOW482 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6000 10 VDS=40V ID=20A 5000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 4000 3000 2000 Coss 2 Crss 1000 0 0 0 10 20 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 70 0 10 20 30 40 50 60 70 VDS (Volts) Figure 8: Capacitance Characteristics 80 5000 1000.0 10µs RDS(ON) limited 10µs 4000 10.0 1ms DC 10ms 1.0 TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 Zθ JC Normalized Transient Thermal Resistance 1 17 5 2 10 3000 2000 1000 1 10 VDS (Volts) 100 1000 0 1E-05 0.0001 0.001 0.01 0.1 0 1 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 TJ(Max)=175°C TC=25°C 100µs Power (W) ID (Amps) 100.0 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=0.45°C/W 0.1 PD 0.01 Ton T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev0: June 2010 www.aosmd.com Page 4 of 7 AOW482 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 350 300 TA=25°C Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=100°C 100 TA=150°C TA=125°C 10 250 200 150 100 50 1 0 1 10 100 1000 Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 0 25 50 75 100 150 175 1000 120 TA=25°C 100 80 Power (W) Current rating ID(A) 125 TCASE (°C) Figure 13: Power De-rating (Note F) 60 40 100 17 5 2 10 10 20 0 0 25 50 75 100 125 150 175 1 0.01 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 1 100 0 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=60°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev0: June 2010 www.aosmd.com Page 5 of 7 AOW482 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 di/dt=800A/µs 125ºC 25ºC 120 25 20 80 125ºC 40 0 0 5 10 15 20 25 0.5 125º 0 0 IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 5 10 15 20 50 50 2.5 40 30 30 25ºC 100 20 125ºC Qrr 2 125ºC trr (ns) 150 40 Irm (A) Qrr (nC) 125ºC 1.5 trr 20 1 25ºC 25ºC 50 10 Irm 600 0.5 125ºC 0 400 S 10 25ºC 200 30 Is=20A 200 800 0 1000 0 0 di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt Rev0: June 2010 25 IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current Is=20A 0 1 0 30 250 1.5 S 5 5 0 25ºC 25ºC 10 10 25ºC 2 15 15 Irm 2.5 125ºC trr 20 trr (ns) 30 Qrr di/dt=800A/µs 25 35 Irm (A) Qrr (nC) 30 40 160 3 S 200 35 45 S 240 www.aosmd.com 200 400 600 800 0 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt Page 6 of 7 AOW482 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev0: June 2010 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 7 of 7