AP0103GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
BVDSS@Tj=125oC
D
RDS(ON)
▼ Lower On-resistance
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
ID
G
40V
2.99mΩ
220A
S
Description
AP0103 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance and
low package cost contribute to the worldwide popular package.
G
TO-220(P)
D
S
Absolute Maximum Ratings
Symbol
o
Parameter
Rating
Units
VDS@Tj=125 C
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current (Chip)
ID@TC=25℃
ID@TC=100℃
220
A
Continuous Drain Current, V GS @ 10V
3
80
A
Continuous Drain Current, V GS @ 10V
3
80
A
320
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
250
W
PD@TA=25℃
Total Power Dissipation
2
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
0.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201304121
AP0103GP-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
Test Conditions
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
38
-
-
V
VGS=10V, ID=40A
-
-
2.99
mΩ
VGS=4.5V, ID=30A
-
-
4.2
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
108
-
S
IDSS
Drain-Source Leakage Current
VDS=32V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
30
48
nC
Qgs
Gate-Source Charge
VDS=32V
-
2.3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
10
-
ns
tr
Rise Time
ID=40A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
40
-
ns
tf
Fall Time
VGS=10V
-
85
-
ns
Ciss
Input Capacitance
VGS=0V
-
2760 4410
pF
Coss
Output Capacitance
VDS=25V
-
605
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
210
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
32
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
24
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 80A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP0103GP-HF
300
200
o
200
T C =150 C
10V
7.0V
6.0V
5.0V
V G =4.0V
160
ID , Drain Current (A)
250
ID , Drain Current (A)
o
10V
7.0V
6.0V
5.0V
V G = 4.0V
T C =25 C
150
100
120
80
40
50
0
0
0
1
2
3
4
0
2
4
6
8
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
4
2.0
I D =40A
V G =10V
I D = 30A
o
T C = 25 C
Normalized RDS(ON)
RDS(ON) (mΩ)
3.6
3.2
2.8
1.6
1.2
0.8
2.4
0.4
2
3
4
5
6
7
8
9
-50
10
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
40
I D =250uA
1.6
o
T j =150 C
Normalized VGS(th)
IS(A)
30
T j =25 o C
20
1.2
0.8
10
0.4
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP0103GP-HF
f=1.0MHz
10
4000
I D =40A
V DS =32V
3500
3000
C iss
2500
6
C (pF)
VGS , Gate to Source Voltage (V)
8
2000
4
1500
1000
2
500
C oss
C rss
0
0
0
10
20
30
40
1
50
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
1000
Operation in this
area limited by
RDS(ON)
Normalized Thermal Response (Rthjc)
Duty factor = 0.5
100us
ID (A)
100
1ms
10ms
10
100ms
DC
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
0.00001
100
0.0001
0.001
V DS ,Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
200
240
V DS =5V
200
ID , Drain Current (A)
ID , Drain Current (A)
160
160
120
Limited by package
80
120
80
40
T j =150 o C
40
T j =25 o C
o
T j =-40 C
0
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
0
1
2
3
4
5
6
V GS , Gate-to-Source Voltage (V)
Fig 12. Transfer Characteristics
4