NEC AP1L2Q On-chip resistor npn silicon epitaxial transistor Datasheet

DATA SHEET
COMPOUND TRANSISTOR
AP1 SERIES
on-chip resistor NPN silicon epitaxial transistor
For mid-speed switching
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Current drive available up to 0.7 A
• On-chip bias resistor
• Low power consumption during drive
AP1 SERIES LISTS
Products
R1 (KΩ)
R2 (KΩ)
AP1A4A
−
10
AP1L2Q
0.47
4.7
AP1A3M
1.0
1.0
AP1F3P
2.2
10
AP1J3P
3.3
10
AP1L3N
4.7
10
AP1A4M
10
10
Electrode Connection
1. Emitter
EIAJ : SC-43B
2. Collector JEDEC: TO-92
3. Base
IEC
: PA33
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−25
V
Collector to emitter voltage
VCEO
−25
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−0.7
A
IC(pulse) *
−1.0
A
A
Collector current (Pulse)
IB(DC)
−0.02
Total power dissipation
PT
750
mW
Junction temperature
Tj
150
°C
Tstg
−55 to +150
°C
Base current (DC)
Storage temperature
* PW ≤ 10 ms, duty cycle ≤ 50 %
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16171EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
AP1 SERIES
AP1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = −22 V, IE = 0
MAX.
Unit
100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
200
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
hFE3 **
VCE = −2.0 V, IC = −0.7 A
50
DC current gain
Collector saturation voltage
Low level input voltage
VCE(sat) **
VIL **
IC = −0.3 A, IC = −6 A
−
−0.28
VCE = −5.0 V, IC = −100 µA
−0.4
V
−0.3
V
−
−
Ω
Input resistance
R1
−
E-to-B resistance
R2
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
** PW ≤ 350 µs, duty cycle ≤ 2 %
AP1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
150
350
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
300
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −0.7 A
50
200
−
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.3 A
−0.3
−0.4
VIL **
VCE = −5.0 V, IC = −100 µA
−0.65
−0.3
V
Low level input voltage
V
Input resistance
R1
329
470
611
Ω
E-to-B resistance
R2
3.39
4.7
6.11
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
** PW ≤ 350 µs, duty cycle ≤ 2 %
AP1A3M
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
80
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −0.7 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.2 A
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.4
V
−0.3
V
Input resistance
R1
0.7
1.0
1.3
kΩ
E-to-B resistance
R2
0.7
1.0
1.3
kΩ
** PW ≤ 350 µs, duty cycle ≤ 2 %
2
−
−0.3
Data Sheet D16171EJ1V0DS
AP1 SERIES
AP1F3P
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
MIN.
TYP.
VCB = −22 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
200
470
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
300
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −0.7 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.2 A
−0.2
−0.4
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.65
−0.3
V
−
200
V
Input resistance
R1
2.3
3.3
4.3
kΩ
E-to-B resistance
R2
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
100
nA
** PW ≤ 350 µs, duty cycle ≤ 2 %
AP1J3P
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
300
600
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
300
700
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −0.7 A
135
600
−
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.15 A
VIL **
VCE = −5.0 V, IC = −100 µA
0.14
0.3
V
0.3
V
Input resistance
R1
2.31
3.3
4.29
kΩ
E-to-B resistance
R2
7
10
13
kΩ
MIN.
TYP.
MAX.
Unit
−100
nA
Low level input voltage
** PW ≤ 350 µs, duty cycle ≤ 2 %
AP1L3N
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
VCB = −22 V, IE = 0
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
200
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −0.7 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.15 A
−0.45
V
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
Input resistance
R1
3.29
4.7
6.11
kΩ
E-to-B resistance
R2
7
10
13
kΩ
** PW ≤ 350 µs, duty cycle ≤ 2 %
Data Sheet D16171EJ1V0DS
3
AP1 SERIES
AP1A4M
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Collector cutoff current
Symbol
ICBO
Conditions
TYP.
VCB = −22 V, IE = 0
MAX.
Unit
−100
nA
DC current gain
hFE1 **
VCE = −2.0 V, IC = −0.1 A
200
−
DC current gain
hFE2 **
VCE = −2.0 V, IC = −0.5 A
100
−
DC current gain
hFE3 **
VCE = −2.0 V, IC = −0.7 A
50
Low level output voltage
VOL **
VIN = −5.0 V, IC = −0.1 A
−0.4
Low level input voltage
VIL **
VCE = −5.0 V, IC = −100 µA
−0.3
V
−
V
Input resistance
R1
7
10
13
kΩ
E-to-B resistance
R2
7
10
13
kΩ
** PW ≤ 350 µs, duty cycle ≤ 2 %
4
MIN.
Data Sheet D16171EJ1V0DS
AP1 SERIES
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Data Sheet D16171EJ1V0DS
5
AP1 SERIES
• The information in this document is current as of July, 2001. The information is subject to change
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and/or types are available in every country. Please check with an NEC sales representative for
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M8E 00. 4
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