AP2304AN
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Small Package Outline
BVDSS
30V
RDS(ON)
117mΩ
ID
▼ Surface Mount Device
2.5A
S
SOT-23
G
Description
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
D
G
The SOT-23 package is universally used for all commercial-industrial
applications.
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
±20
V
ID@TA=25℃
Continuous Drain Current3, VGS @ 10V
2.5
A
ID@TA=70℃
Continuous Drain Current3, VGS @ 10V
2
A
10
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200318041
AP2304AN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.1
-
V/℃
VGS=10V, ID=2.5A
-
-
117
mΩ
VGS=4.5V, ID=2A
-
-
190
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=10V, ID=2.5A
-
2
-
S
o
VDS=30V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=24V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=2.5A
-
3
5
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
0.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.8
-
nC
VDS=15V
-
5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
11
-
ns
tf
Fall Time
RD=15Ω
-
2
-
ns
Ciss
Input Capacitance
VGS=0V
-
120
190
pF
Coss
Output Capacitance
VDS=25V
-
62
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
24
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.67
-
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
IS=2A, VGS=0V,
-
24
-
ns
dI/dt=100A/µs
-
23
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
Max. Units
AP2304AN
12
12
o
T A =150 C
T A =25 o C
10
10V
6.0V
5.0V
8
ID , Drain Current (A)
ID , Drain Current (A)
10
6
4.0V
4
2
10V
6.0V
5.0V
8
6
4.0V
4
V G =3.0V
2
V G =3.0V
0
0
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
140
1.8
I D =2 A
T A =25 ℃
130
V G =10V
I D =2.5A
1.6
Normalized RDS(ON)
RDS(ON) (mΩ )
120
110
100
90
1.4
1.2
1.0
0.8
80
0.6
70
3
5
7
9
-50
11
0
50
100
150
o
T j , Junction Temperature ( C)
VGS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
2.05
10.00
1.85
1.00
T j =25 o C
VGS(th) (V)
IS (A)
T j =150 o C
1.65
0.10
1.45
0.01
1.25
0.1
0.5
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.3
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2304AN
f=1.0MHz
12
1000
I D =2.5A
V DS =24V
V DS =20V
V DS =15V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
100
C oss
4
C rss
2
10
0
0
1
2
3
4
5
1
6
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (R thja)
Duty factor=0.5
ID (A)
10
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
0.2
0.1
0.1
0.05
PDM
t
0.01
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 270 ℃ /W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q