AP2319GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
S
▼ RoHS Compliant & Halogen-Free
SOT-23
BVDSS
-30V
RDS(ON)
90mΩ
ID
-3.1A
G
D
Description
AP2319 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The special design SOT-23 package with good thermal performance is
widely preferred for all commercial-industrial surface mount applications
using infrared reflow technique and suited for voltage conversion or
switch applications.
G
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
- 30
V
VGS
Gate-Source Voltage
+20
V
-3.1
A
-2.5
A
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
-12
A
PD@TA=25℃
Total Power Dissipation
1.38
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201501212
AP2319GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-2.8A
-
-
90
mΩ
VGS=-4.5V, ID=-2A
-
-
150
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-2A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-2A
-
4.3
6.9
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
VDS=-15V
-
5.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
9
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18.5
-
ns
tf
Fall Time
VGS=-10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
310
500
pF
Coss
Output Capacitance
VDS=-25V
-
60
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
-
Ω
Min.
Typ.
IS=-1.2A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-2A, VGS=0V,
-
16
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2319GN-HF
12
30
T A = 150 o C
-10V
-7.0V
-6.0V
-5.0V
-10V
-7.0V
-6.0V
-5.0V
10
-ID , Drain Current (A)
-ID , Drain Current (A)
T A =25 o C
20
V G = -4.0V
10
V G = -4.0V
65mΩ
8
6
4
2
0
0
0
2
4
6
8
0
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
120
I D = -2A
I D = -2.8A
V GS = -10V
T A =25 o C
110
Normalized RDS(ON)
RDS(ON) (Ω )
1.4
100
90
1.2
1
80
0.8
70
0.6
60
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
6
5
Normalized VGS(th)
1.6
-IS(A)
4
T j =150 o C
3
T j =25 o C
2
1.2
0.8
0.4
2.01E+08
1
0
0
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2319GN-HF
500
8
400
65mΩ
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10
6
I D = -2A
V DS = -15V
300
4
200
2
100
C iss
C oss
C rss
0
0
0
2
4
6
1
8
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
Operation in this
area limited by
RDS(ON)
100us
1
1ms
10ms
0.1
100ms
1s
DC
T A =25 o C
Single Pulse
0.01
Normalized Thermal Response (Rthja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
DUTY=0.5
0.2
0.1
PDM
0.1
t
T
0.05
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
0.01
Rthja = 270℃/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
Charge
Q
td(off) tf
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP2319GN-HF
MARKING INFORMATION
Part Number :M1
M1SS
Date Code : SS
SS:2004,2008,2012,2016,2020...
SS:2003,2007,2011,2015,2019...
SS:2002,2006,2010,2014,2018...
SS:2001,2005,2009,2013,2017...
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