AP2761I-A
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Repetitive Avalanche Rated
D
▼ Fast Switching
▼ Simple Drive Requirement
BVDSS
650V
RDS(ON)
1.0Ω
ID
10A
G
▼ RoHS Compliant
S
Description
AP2761 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
G
D
switching,ruggedized design and cost-effectiveness.
S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
10
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
6.4
A
36
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
37
W
Linear Derating Factor
0.3
W/℃
EAS
Single Pulse Avalanche Energy2
65
mJ
IAR
Avalanche Current
10
A
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
3.4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
65
℃/W
Data & specifications subject to change without notice
200706053-1/4
AP2761I-A
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
650
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5A
-
-
1
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
4.8
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=10A
-
53
-
nC
o
IGSS
3
VGS=0V, ID=1mA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=520V
-
10
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
15
-
nC
3
td(on)
Turn-on Delay Time
VDD=320V
-
16
-
ns
tr
Rise Time
ID=10A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
82
-
ns
tf
Fall Time
RD=32Ω
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
2770
-
pF
Coss
Output Capacitance
VDS=15V
-
320
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
8
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
Test Conditions
IS=10A, VGS=0V
Max. Units
1.5
V
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
610
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
8.64
-
µC
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=1.2mH , RG=25Ω , IAS=10A.
3.Pulse width <300us , duty cycle <2%.
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AP2761I-A
14
8
12
10V
5.0V
6
10
ID , Drain Current (A)
ID , Drain Current (A)
T C =150 o C
10V
6.0V
o
T C =25 C
8
6
5.0V
4
4.5V
4
V G =4.0V
2
2
V G =4.0V
0
0
0
5
10
15
20
25
0
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
15
20
25
Fig 2. Typical Output Characteristics
2.8
1.2
I D =5A
2.4
V G =10V
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
5
V DS , Drain-to-Source Voltage (V)
1
2
1.6
1.2
0.8
0.9
0.4
0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
o
T j , Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
5
100
4
T j = 150 o C
T j = 25 o C
3
VGS(th) (V)
IS (A)
10
1
2
0.1
1
0
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP2761I-A
16
f=1.0MHz
10000
C iss
12
V DS =330V
V DS =410V
V DS =520V
C oss
C (pF)
VGS , Gate to Source Voltage (V)
I D =10A
8
100
4
C rss
1
0
0
10
20
30
40
50
60
70
1
80
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Duty factor=0.5
ID (A)
10
1ms
10ms
1
100ms
1s
DC
0.1
T c =25 o C
Single Pulse
0.01
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) t
f
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4