AP3310GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ 2.5V Gate Drive Capability
▼ Fast Switching Characteristic
BVDSS
-20V
RDS(ON)
150mΩ
ID
G
-10A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
D
S
TO-252(H)
This device is suited for low voltage and lower power
applications.
G
D
TO-251(J)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
- 20
V
VGS
Gate-Source Voltage
± 12
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-10
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-6.2
A
1
IDM
Pulsed Drain Current
-24
A
PD@TC=25℃
Total Power Dissipation
15.6
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
8.0
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
201029074-1/4
AP3310GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
VGS=-4.5V, ID=-2.8A
-
-
150 mΩ
VGS=-2.5V, ID=-2.0A
-
-
250 mΩ
VDS=VGS, ID=-250uA
-0.5
-
-
V
VDS=-5V, ID=-2.8A
-
2.8
-
S
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±12V
-
-
ID=-2.8A
-
4.2
-
nC
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
Min. Typ. Max. Units
2
2
-
V
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-6V
-
1.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-5V
-
0.4
-
nC
VDS=-6V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-5V
-
13
-
ns
tf
Fall Time
RD=6Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
320
-
pF
Coss
Output Capacitance
VDS=-6V
-
75
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
55
-
pF
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Min. Typ. Max. Units
Tj=25℃, IS=-10A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-2.8A, VGS=0V,
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1.Pulse width limited by Maximum junction temperature.
2.Pulse test
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP3310GH/J
20
20
T C =25 o C
T C =150 o C
-5.0V
-4.5V
-5.0V
-4.5V
16
-3.5V
12
-2.5V
8
-ID , Drain Current (A)
-ID , Drain Current (A)
16
V G = -2.0V
4
65mΩ
12
-3.5V
8
-2.5V
V G = -2.0V
4
0
0
0
1
2
3
4
5
6
7
8
0
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
280
I D =-2A
I D = -2.8A
V GS = -4.5V
T C =25 o C
1.4
Normalized RDS(ON)
240
RDS(ON) (Ω )
1
200
160
1.2
1
0.8
120
0.6
80
0
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
4
1.2
-IS(A)
Normalized -VGS(th) (V)
1.4
T j =150 o C
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
5
3
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
T j =25 o C
2
1
0.8
0.6
1
2.01E+08
0.4
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP3310GH/J
f=1.0MHz
12
1000
I D = -2.8A
V DS = -6V
Ciss
65mΩ
8
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
100
Coss
4
Crss
2
0
10
0
1
2
3
4
5
6
7
8
9
10
1
5
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
Normalized Thermal Response (Rthjc)
100
-ID (A)
100us
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
0.1
DUTY=0.5
0.2
0.1
PDM
0.1
t
0.05
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc +
0.01
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-5V
QGS
QGD
10%
VGS
td(on) tr
Charge
Q
td(off) tf
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252
D
D1
E2
MIN
NOM
MAX
A2
1.80
2.30
2.80
A3
0.40
0.50
0.60
B1
0.40
0.70
1.00
D
6.00
6.50
7.00
D1
4.80
5.35
5.90
E3
3.50
4.00
4.50
E3
E1
B1
F1
e
Millimeters
SYMBOLS
F
2.20
2.63
3.05
F1
0.5
0.85
1.20
E1
5.10
5.70
6.30
E2
0.50
1.10
1.80
e
--
2.30
--
C
0.35
0.50
0.65
F
e
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
R : 0.127~0.381
A2
A3
(0.1mm
C
Part Marking Information & Packing : TO-252
Part Number
Package Code
meet Rohs requirement
3310GH
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
ADVANCED POWER ELECTRONICS CORP.
D
Millimeters
A
c1
SYMBOLS MIN
D1
NOM
MAX
Original Original
E2
E1
E
A1
B2
F
B1
Original
A
2.10
2.30
2.50
A1
0.60
1.20
1.80
B1
0.40
0.60
0.80
B2
0.60
0.95
1.25
c
c1
0.40
0.50
0.65
0.40
0.55
0.70
D
6.00
6.50
7.00
D1
4.80
5.40
5.90
E1
5.00
5.50
6.00
E2
1.20
1.70
2.20
e
----
2.30
----
F
7.00
---
16.70
1.All Dimensions Are in Millimeters.
c
e
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-251
Part Number
meet Rohs requirement
Package Code
3310GJ
LOGO
YWWSSS
Date Code (YWWSSS)
Y ：Last Digit Of The Year
WW ：Week
SSS ：Sequence