AP4453GYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
BVDSS
-30V
RDS(ON)
13mΩ
ID
-12.8A
G
S
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The PMPAK ® 3x3 package is special for DC-DC converters application
and lower 1.0mm profile with backside heat sink.
D
D
D
S
S
S
G
PMPAK ® 3x3
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-30
V
+20
V
3
-12.8
A
3
-10.3
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-50
A
PD@TA=25℃
Total Power Dissipation
3.13
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
5
℃/W
40
℃/W
1
201301101
AP4453GYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-10A
-
10.1
13
mΩ
VGS=-4.5V, ID=-6A
-
15.2
20
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-1.5
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
22
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-10A
-
24
38
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
6.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
10
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
11
-
ns
tr
Rise Time
ID=-1A
-
9.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
80
-
ns
tf
Fall Time
VGS=-10V
-
33
-
ns
Ciss
Input Capacitance
VGS=0V
-
2960 4735
pF
Coss
Output Capacitance
VDS=-15V
-
305
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
265
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6.2
12.4
Ω
Min.
Typ.
Max. Units
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
IS=-2.9A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
6
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec ; 210oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP4453GYT-HF
60
60
T A =25 o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
40
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
50
-ID , Drain Current (A)
-ID , Drain Current (A)
50
T A = 150 o C
30
20
10
40
30
20
10
0
0
0
1
2
3
4
5
6
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.6
I D = -10A
V G = -10V
I D = -6 A
T A = 25 ℃
18
Normalized RDS(ON)
1.4
RDS(ON) (mΩ)
16
14
12
1.2
1.0
0.8
10
8
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
I D = -250uA
1.6
Normalized VGS(th)
-IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.2
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP4453GYT-HF
f=1.0MHz
3500
8
I D = -10 A
3000
C iss
6
2500
C (pF)
-VGS , Gate to Source Voltage (V)
V DS = -15 V
2000
4
1500
1000
2
500
0
C oss
C rss
0
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
Operation in this area
limited by RDS(ON)
100us
10
1ms
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
10ms
1
100m
s
0.1
1s
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthia=210 ℃/W
DC
0.001
0.01
0.01
0.1
1
10
0.0001
100
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
16
V DS = -5V
T j =25 o C
T j = -40 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
50
T j =150 o C
40
30
20
12
8
4
10
0
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Maximum Continuous Drain
Current v.s. Ambient Temperature
4