AP4509AGH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D1/D2
▼ Good Thermal Performance
RDS(ON)
▼ Fast Switching Performance
ID
▼ RoHS Compliant & Halogen-Free
30V
10mΩ
14A
P-CH BVDSS
S1
G1
S2
G2
Description
TO-252-4L
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
-30V
RDS(ON)
23mΩ
ID
-9.5A
D1
D2
G1
G2
S1
S2
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Rating
N-channel
Units
P-channel
VDS
Drain-Source Voltage
30
-30
V
VGS
Gate-Source Voltage
+20
+20
V
14
-9.5
A
11
-7.6
A
50
-40
A
ID@TA=25℃
ID@TA=70℃
Drain Current
3
Drain Current
3
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
3.13
W
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
6
℃/W
40
℃/W
1
201501162
AP4509AGH-HF
N-CH Electrical Characteristics@ Tj=25oC(unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance2
Test Conditions
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=11A
-
-
10
mΩ
VGS=5V, ID=7A
-
-
16
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
21
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=7A
-
15
24
nC
Qgs
Gate-Source Charge
VDS=24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
10
-
ns
tr
Rise Time
ID=7A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
25
-
ns
tf
Fall Time
VGS=10V
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
715
1140
pF
Coss
Output Capacitance
VDS=25V
-
220
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
160
-
pF
Min.
Typ.
IS=2.6A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=7A, VGS=0V
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
2
AP4509AGH-HF
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
VGS=-10V, ID=-8A
-
-
23
mΩ
VGS=-5V, ID=-5A
-
-
35
mΩ
VGS=0V, ID=-250uA
Max. Units
BVDSS
Drain-Source Breakdown Voltage
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
2
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
15
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-5A
-
17
27.2
nC
Qgs
Gate-Source Charge
VDS=-24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
10
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
11
-
ns
tr
Rise Time
ID=-5A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
40
-
ns
tf
Fall Time
VGS=-10V
-
26
-
ns
Ciss
Input Capacitance
VGS=0V
-
1260 2000
pF
Coss
Output Capacitance
VDS=-25V
-
210
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
185
-
pF
Source-Drain Diode
Min.
Typ.
VSD
Symbol
Forward On Voltage2
Parameter
IS=-2.6A, VGS=0V
Test Conditions
-
-
Max. Units
-1.2
V
trr
Reverse Recovery Time
IS=-5A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test.
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4509AGH-HF
N-Channel
40
40
ID , Drain Current (A)
30
20
10V
7.0V
6.0V
5.0V
V G = 4.0V
T A = 150 o C
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
V G = 4.0V
T A = 25 o C
30
20
10
10
0
0
0
1
2
3
0
4
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
15
ID=7A
I D = 11 A
V G =10V
T A =25 o C
2.0
Normalized RDS(ON)
RDS(ON) (mΩ )
13
11
1.6
1.2
9
0.8
0.4
7
2
3
4
5
6
7
8
9
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
T j =150 o C
6
Normalized VGS(th)
IS(A)
8
T j =25 o C
4
1.2
0.8
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4509AGH-HF
N-Channel
f=1.0MHz
1000
I D =7A
V DS =24V
8
800
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
600
4
400
2
200
C oss
C rss
0
0
0
10
20
30
1
40
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
100us
ID (A)
10
1ms
10ms
100ms
1
1s
0.1
DC
T A =25 o C
Single Pulse
0.01
Normalized Thermal Response (R thja)
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
Single Pulse
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + TA
Rthja=75℃
℃ /W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4509AGH-HF
P-Channel
40
40
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
-ID , Drain Current (A)
30
20
10
30
20
10
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
35
2.4
I D = -8A
V G = -10V
I D = -5 A
o
T A =25 C
31
2.0
Normalized RDS(ON)
RDS(ON) (mΩ )
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
T A = 150 o C
-ID , Drain Current (A)
o
T A = 25 C
27
23
1.6
1.2
0.8
19
0.4
15
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS ,Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.4
1.2
4
T j =150 o C
Normalized VGS(th)
-IS(A)
6
T j =25 o C
1.0
0.8
2
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4509AGH-HF
P-Channel
f=1.0MHz
2000
8
1600
I D = -5 A
V DS = -24 V
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
1200
4
800
2
400
C oss
C rss
0
0
0
10
20
30
1
40
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
-ID (A)
10
1ms
10ms
1
100ms
1s
0.1
DC
o
T A =25 C
Single Pulse
0.01
Normalized Thermal Response (R thja)
Duty factor=0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + TA
Rthja=75℃
℃ /W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7
AP4509AGH-HF
MARKING INFORMATION
4509AGH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
8