AP4511GH-A
RoHS-compliant Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D1/D2
N-CH BVDSS
▼ Good Thermal Performance
▼ Fast Switching Performance
S1
G1
S2
G2
Description
35V
RDS(ON)
27mΩ
ID
P-CH BVDSS
RDS(ON)
ID
TO-252-4L
8.6A
-35V
45mΩ
-6.7A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
D1
D2
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
35
-35
V
±20
±20
V
Continuous Drain Current
3
8.6
-6.7
A
Continuous Drain Current
3
6.9
-5.4
A
50
-50
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
3.125
W
Linear Derating Factor
0.025
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Value
Units
Max.
8
℃/W
Max.
40
℃/W
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
200627072-1/7
AP4511GH-A
o
N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
35
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=8A
-
-
27
mΩ
VGS=4.5V, ID=5A
-
-
36
mΩ
0.8
-
2.5
V
VDS=10V, ID=8A
-
13
-
S
VDS=35V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=28V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=8A
-
11
18
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
VDS=VGS, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
VGS=0V, ID=250uA
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=28V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDS=18V
-
12
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=18Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
830
1330
pF
Coss
Output Capacitance
VDS=25V
-
150
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Min.
Typ.
IS=8A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=8A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
2/7
AP4511GH-A
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-35
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-6A
-
-
45
mΩ
VGS=-4.5V, ID=-4A
-
-
70
mΩ
-0.8
-
-2.5
V
VDS=-10V, ID=-6A
-
10
-
S
VDS=-35V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-28V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=-6A
-
10
19
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VDS=VGS, ID=-250uA
o
IDSS
VGS=0V, ID=-250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-28V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDS=-18V
-
10
-
ns
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
26
-
ns
tf
Fall Time
RD=18Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
690
1100
pF
Coss
Output Capacitance
VDS=-25V
-
165
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5
7.5
Ω
Min.
Typ.
IS=-6A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-6A, VGS=0V
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
12
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.N-CH , P-CH are same , mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
3/7
AP4511GH-A
N-Channel
50
50
T C = 25 o C
T C = 150 C
40
ID , Drain Current (A)
ID , Drain Current (A)
40
30
4.5V
20
V G =3.0V
10
30
5.0V
20
4.5V
V G =3.0V
10
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
38
ID=5A
ID=8A
V G =10V
T C =25 o C
1.4
Normalized RDS(ON)
34
RDS(ON) (mΩ)
10V
7.0V
o
10V
7.0V
5.0V
30
26
1.2
1.0
0.8
22
18
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
Normalized VGS(th) (V)
1.4
4
o
o
IS(A)
T j =150 C
T j =25 C
2
1.1
0.8
0.5
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4511GH-A
N-Channel
f=1.0MHz
1000
14
C iss
ID=8A
V DS = 28V
VGS , Gate to Source Voltage (V)
12
10
C (pF)
8
6
4
C oss
2
C rss
100
0
0
5
10
15
20
1
25
5
9
Q G , Total Gate Charge (nC)
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
100us
1ms
10ms
100ms
1
1s
0.1
o
T A =25 C
Single Pulse
10s
Normalized Thermal Response (Rthja)
1
10
ID (A)
13
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
Rthja=75℃/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =5V
ID , Drain Current (A)
40
T j =25 o C
QG
T j =150 o C
4.5V
30
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5/7
AP4511GH-A
P-Channel
50
50
-10V
-7.0V
o
T C = 25 C
40
-ID , Drain Current (A)
40
-ID , Drain Current (A)
-10V
-7.0V
o
T C = 150 C
-5.0V
-4.5V
30
20
V G = - 3.0V
10
-5.0V
30
-4.5V
20
V G = - 3.0V
10
0
0
0
1
2
3
4
5
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
70
ID=-4A
I D = -6 A
V G = - 10V
T C =25 o C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
60
50
1.2
1.0
40
0.8
30
0.6
2
4
6
8
10
-50
0
50
100
150
o
-V GS ,Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
6
Normalized -VGS(th) (V)
5
-IS(A)
4
T j =150 o C
T j =25 o C
3
2
1.2
0.8
1
0
0.4
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
AP4511GH-A
P-Channel
f=1.0MHz
1000
I D = -6 A
V DS = - 28V
12
C iss
C (pF)
-VGS , Gate to Source Voltage (V)
16
8
C oss
4
C rss
0
100
0
5
10
15
20
25
1
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
-ID (A)
10
1ms
10ms
100ms
1
1s
o
T A =25 C
Single Pulse
0.1
10s
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthja + T A
0.01
Rthja=75℃/W
Single Pulse
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
VG
V DS =-5V
-ID , Drain Current (A)
40
T j =25 o C
QG
T j =150 o C
-4.5V
30
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7/7
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-252(4L)
A
SYMBOLS
B
Millimeters
MIN
NOM
MAX
A
6.40
6.6
6.80
B
5.2
5.35
5.50
C
9.40
9.80
10.20
D
2.40
2.70
3.00
1.27 REF.
P
S
E3
C
M
R
D
S
P
0.50
0.65
0.80
E3
3.50
4.00
4.50
R
0.80
1.00
1.20
G
0.40
0.50
0.60
H
2.20
2.30
2.40
J
0.45
0.50
0.55
K
0.00
0.075
0.15
L
0.90
1.20
1.50
M
5.40
5.60
5.80
1.All Dimensions Are in Millimeters.
G
2.Dimension Does Not Include Mold Protrusions.
H
K
J
L
Part Marking Information & Packing : TO-252(4L)
Part Number
Package Code
meet Rohs requirement
XXXXGH
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence