AP4543GEM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
N-CH BVDSS
D2
D2
▼ Lower Gate Charge
D1
RDS(ON)
D1
▼ Fast Switching Performance
SO-8
S1
25mΩ
ID
G2
▼ RoHS Compliant & Halogen-Free
40V
S2
G1
7A
P-CH BVDSS
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design,low on-resistance and costeffectiveness.
-40V
RDS(ON)
42mΩ
ID
-5.5A
D1
G1
D2
G2
The SO-8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
40
-40
V
+20
+20
V
Continuous Drain Current
3
7.0
-5.5
A
Continuous Drain Current
3
5.5
-4.4
A
30
-30
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
2.0
W
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
200909011
AP4543GEM-HF
o
N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
40
-
-
V
VGS=10V, ID=7A
-
-
25
mΩ
VGS=4.5V, ID=5A
-
-
38
mΩ
VGS=0V, ID=250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
Qg
Total Gate Charge
ID=7A
-
7.5
12
nC
Qgs
Gate-Source Charge
VDS=20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.7
-
nC
2
2
td(on)
Turn-on Delay Time
VDS=20V
-
6
-
ns
tr
Rise Time
ID=1A
-
6.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=20Ω
-
6.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
605
970
pF
Coss
Output Capacitance
VDS=25V
-
115
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.1
-
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=7A, VGS=0V
-
21
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
16
-
nC
2
AP4543GEM-HF
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-40
-
-
V
VGS=-10V, ID=-5A
-
-
42
mΩ
VGS=-4.5V, ID=-3A
-
-
65
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-5A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+30
uA
ID=-5A
-
11.5
18.5
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-20V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
7
-
nC
2
td(on)
Turn-on Delay Time
VDS=-20V
-
10
-
ns
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
25
-
ns
tf
Fall Time
RD=20Ω
-
30
-
ns
Ciss
Input Capacitance
VGS=0V
-
690
1100
pF
Coss
Output Capacitance
VDS=-25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
135
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6
-
Ω
Min.
Typ.
IS=-1.7A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-5A, VGS=0V
-
29
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
24
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board , t <10sec ; 135℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP4543GEM-HF
N-Channel
40
40
ID , Drain Current (A)
30
V G = 4.0 V
20
30
V G = 4.0V
20
10
10
0
0
0
1
2
3
0
4
1
V DS , Drain-to-Source Voltage (V)
3
4
5
6
Fig 2. Typical Output Characteristics
42
2.0
ID=5A
ID=7A
V G =10V
T A =25 o C
Normalized RDS(ON)
34
RDS(ON) (mΩ)
2
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
26
1.6
1.2
0.8
18
0.4
10
2
4
6
8
-50
10
Fig 3. On-Resistance v.s. Gate Voltage
0
25
50
75
100
125
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
8
1.2
Normalized VGS(th) (V)
10
6
T j =150 o C
-25
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
IS(A)
10V
7.0V
6.0V
5.0V
T A = 150 o C
ID , Drain Current (A)
10V
7.0V
6.0V
5.0V
o
T A = 25 C
T j =25 o C
4
1
0.8
0.6
2
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP4543GEM-HF
N-Channel
f=1.0MHz
1000
8
800
I D =7A
V DS =20V
C (pF)
VGS , Gate to Source Voltage (V)
10
6
600
C iss
4
400
2
200
C oss
C rss
0
0
0
4
8
12
1
16
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this area
limited by RDS(ON)
10
ID (A)
100us
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP4543GEM-HF
P-Channel
40
40
-10V
-7.0V
-6.0V
-5.0V
-ID , Drain Current (A)
30
o
T A = 150 C
-ID , Drain Current (A)
o
T A = 25 C
V G = - 4.0V
20
-10V
-7.0V
-6.0V
-5.0V
30
V G = - 4.0V
20
10
10
0
0
0
1
2
3
4
0
5
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
70
I D = -5A
V G = -10V
I D = -3 A
T A =25 o C
60
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
50
40
1.2
0.8
30
0.4
20
2
4
6
8
-50
10
0
50
100
150
o
-V GS ,Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
1.4
Normalized -VGS(th) (V)
-IS(A)
8
6
T j =150 o C
T j =25 o C
4
1.2
1.0
0.8
2
0.6
0
0.4
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP4543GEM-HF
P-Channel
f=1.0MHz
1000
8
800
I D = -5 A
V DS = -20 V
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C iss
600
.
4
400
2
200
0
C oss
C rss
0
0
4
8
12
16
20
1
24
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
10
100us
1ms
10ms
1
100ms
1s
0.1
o
T c =25 C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
100
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja=135 oC/W
0.01
0.01
0.1
1
10
100
0.001
0.01
0.1
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7