AP4578M
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
D1 D2
D1
D1
D1
▼ Lower Gate Charge
▼ Fast Switching Performance
D2
D2
SO-8
SO-8
S2
G1 S2
S1 G1
S1
G2
G2
Description
N-CH BVDSS
RDS(ON)
60V
64mΩ
ID
P-CH BVDSS
RDS(ON)
ID
4.5A
-60V
125mΩ
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
-3A
D2
D1
G2
G1
S2
S1
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Units
P-channel
60
-60
V
±20
±20
V
Continuous Drain Current
3
4.5
-3
A
Continuous Drain Current
3
3.6
-2.4
A
20
-20
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
201122041
AP4578M
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
60
-
-
V
-
0.05
-
V/℃
VGS=10V, ID=4A
-
55
64
mΩ
VGS=4.5V, ID=2A
-
65
80
mΩ
VDS=VGS, ID=250uA
1
-
3
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=10V, ID=4A
-
7
-
S
o
VDS=60V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=48V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=4A
-
9
17
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4
-
nC
2
td(on)
Turn-on Delay Time
VDS=30V
-
9
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=30Ω
-
7
-
ns
Ciss
Input Capacitance
VGS=0V
-
730
1170
pF
Coss
Output Capacitance
VDS=25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=4A, VGS=0V
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
39
-
nC
AP4578M
o
P-CH Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-60
-
-
V
-
-0.04
-
V/℃
VGS=-10V, ID=-3A
-
100
125
mΩ
VGS=-4.5V, ID=-2A
-
120
150
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-2A
-
5
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-60V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=-48V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
VGS(th)
IGSS
VGS=0V, ID=-250uA
2
Static Drain-Source On-Resistance
2
Max. Units
Qg
Total Gate Charge
ID=-3A
-
12
20
nC
Qgs
Gate-Source Charge
VDS=-48V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
6
-
nC
VDS=-30V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
33
-
ns
tf
Fall Time
RD=30Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
905
1450
pF
Coss
Output Capacitance
VDS=-25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Rg
Gate Resistance
f=1.0MHz
-
12
18
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1.7A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-3A, VGS=0V
-
36
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
55
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
AP4578M
N-Channel
25
25
T A = 25 o C
10V
7.0V
20
ID , Drain Current (A)
20
ID , Drain Current (A)
10V
7.0V
T A =150 o C
15
10
5
15
10
V G =3.0V
5
V G =3.0V
0
0
0
1
2
3
4
5
0
1
V DS , Drain-to-Source Voltage (V)
4
5
Fig 2. Typical Output Characteristics
1.6
75
ID=2A
T A =25 o C
I D =4A
V G =10V
1.4
Normalized RDS(ON)
70
RDS(ON) (mΩ )
3
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
65
60
55
1.2
1.0
-6.3
-5
0.8
50
0.6
2
4
6
8
10
-50
Fig 3. On-Resistance v.s. Gate Voltage
3
1.5
Normalized VGS(th) (V)
2
T j =150 o C
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
4
2
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
IS(A)
2
T j =25 o C
1
1
0.5
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
T j ,Junction Temperature (
100
o
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4578M
N-Channel
f=1.0MHz
1000
C iss
ID=4A
V DS = 48 V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C oss
100
C rss
4
2
0
10
0
4
8
12
16
20
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
Normalized Thermal Response (Rthja)
Duty factor=0 5
100us
1ms
ID (A)
10ms
1
100
T A =25 o C
Single Pulse
0.1
02
01
0.1
0 05
PDM
0 02
t
T
0 01
0.01
Duty factor = t/T
Peak T = P x R
Single Pulse
+T
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
25
VG
V DS =5V
ID , Drain Current (A)
20
T j =25 o C
QG
T j =125 o C
4.5V
15
QGS
QGD
10
5
Charge
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q
AP4578M
P-Channel
20
20
-10V
o
T A =150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
T A = 25 o C
15
10
V
3 0V
5
-10V
15
10
V
5
0
3 0V
0
0
1
2
3
4
5
6
7
0
1
-V DS , Drain-to-Source Voltage (V)
2
3
4
5
6
7
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
170
I D = -2 A
I D = -3 A
V G = - 10V
1.8
o
T A =25 C
160
Normalized R DS(ON)
RDS(ON) (mΩ )
1.6
150
140
1.4
1.2
1.0
0.8
130
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
2
Normalized -VGS(th) (V)
1.5
-IS(A)
2
T j =25 o C
o
T j =150 C
1
0
1
0.5
0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4578M
P-Channel
f=1.0MHz
-VGS , Gate to Source Voltage (V)
12
10000
I D =-3A
V DS =-48V
10
8
C iss
C (pF)
1000
6
4
C
100
C rss
2
0
10
0.0
5.0
10.0
15.0
20.0
25.0
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
100us
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
1
T A =25 o C
0.1
0.1
P DM
0.01
t
T
Duty factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja = 135℃
℃ /W
0.001
0.01
0.1
1
10
100
1000
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
-ID , Drain Current (A)
20
VG
V DS =-5V
15
T j =25 o C
QG
T j =150 o C
-4.5V
QGS
10
QGD
5
Charge
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q