AP4924M
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D2
▼ Low On-resistance
▼ Fast Switching
D2
D1
D1
BVDSS
20V
RDS(ON)
35mΩ
ID
6A
G2
S2
SO-8
S1
G1
Description
D2
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
G2
G1
S1
S2
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
± 12
V
3
6
A
3
4.8
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
35
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
20020502
AP4924M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
RDS(ON)
20
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
Static Drain-Source On-Resistance2
VGS=4.5V, ID=6A
-
-
35
mΩ
VGS=2.5V, ID=5.2A
-
-
50
mΩ
VDS=VGS, ID=250uA
0.5
-
1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=10V, ID=6A
-
18.5
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
ID=6A
-
9
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Min. Typ. Max. Units
2
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.2
-
nC
VDS=10V
-
6.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=4.5V
-
20
-
ns
tf
Fall Time
RD=10Ω
-
15
-
ns
Ciss
Input Capacitance
VGS=0V
-
300
-
pF
Coss
Output Capacitance
VDS=8V
-
255
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Min. Typ. Max. Units
VD=VG=0V , VS=1.2V
-
-
1.67
A
Tj=25℃, IS=1.7A, VGS=0V
-
-
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on Min. copper pad.
AP4924M
25
25
o
T C =25 C
20
2.5V
15
10
V GS =2.0V
5
2.5V
15
10
V GS =2.0V
5
0
0
0
1
2
3
4
5
6
0
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
45
I D =6A
T C =25 ℃
I D =6A
V GS =4.5V
1.6
Normalized RDS(ON)
40
RDS(ON) (mΩ )
4.5V
3.5V
3.0V
20
ID , Drain Current (A)
ID , Drain Current (A)
T C =150 o C
4.5V
3.5V
3.0V
35
30
1.4
1.2
1.0
25
0.8
0.6
20
2
3
4
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP4924M
3
8
7
6
ID , Drain Current (A)
2
PD (W)
5
4
3
1
2
1
0
0
25
50
75
100
125
0
150
50
100
150
T c ,Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
Normalized Thermal Response (Rthja)
Duty Factor = 0.5
10
1ms
ID (A)
10ms
1
100ms
0.1
0.1
0.05
0.02
0.01
P DM
0.01
1s
0.1
10s
DC
T C =25 o C
Single Pulse
0.2
t
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135 oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP4924M
I D =6A
V DS =10V
5
Ciss
4
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
6
3
Coss
100
Crss
2
1
0
10
0
2
4
6
8
10
12
1
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.5
100.00
10.00
1
T j =25 o C
VGS(th) (V)
IS(A)
T j =150 o C
1.00
0.5
0.10
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
-50
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
50
100
T j ,Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4924M
VDS
90%
RD
VDS
D
0.5x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
10%
S
+
VGS
VGS
4..5V
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
D
4.5V
0.5 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
+
1~ 3 mA
I
G
I
D
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q