WJ AP601-PCB1960 High dynamic range 1.8w 28v hbt amplifier Datasheet

AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Product Features
Product Description
• 800 – 2400 MHz
• +32.5 dBm P1dB
• -51 dBc ACLR @ ¼W PAVG
• -55 dBc IMD3 @ ¼W PEP
Functional Diagram
The AP601 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has 13.5 dB gain, while
being able to achieve high performance for 800-2400 MHz
applications with up to +32.5 dBm of compressed 1dB power.
• 17% Efficiency @ ¼W PAVG
•
•
•
The AP601 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
Applications
• Mobile Infrastructure HPA
• WiBro HPA
ACLR1 vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
-35
20 mA
-40
ACLR1 (dBc)
•
The AP601 uses a high reliability, high voltage
InGaP/GaAs HBT process technology.
The device
Internal Active Bias
incorporates proprietary bias circuitry to compensate for
Internal Temp Compensation
variations in linearity and current draw over temperature.
Capable of handling 7:1 VSWR @ The module does not require any negative bias voltage; an
internal active bias allows the AP601 to operate directly off
28 Vcc, 2.14 GHz, 1W CW Pout
a commonly used high voltage supply (typically +24 to
+32V). An added feature allows the quiescent bias to be
Lead-free/RoHS-compliant
adjusted externally to meet specific system requirements.
5x6 mm power DFN package
40 mA
50 mA
-45
-50
-55
-60
18
20
22
24
26
Average Output Power (dBm)
Specifications
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 40 mA
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +24 dBm PEP
PIN_VPD Current, Ipd
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units Min
MHz
MHz
dBm
dB
dB
dB
dBc
dBc
mA
mA
%
dBm
mA
V
V
Typ
800
2140
+24
13.5
12
8
-51
-55
1
52
17
+32.5
40
+5
+28
Absolute Maximum Rating
Parameter
Rating
Storage Temperature, Tstg
Junction Temperature, TJ
-55 to +125 ºC
RF Input Power (CW tone), Pin
Breakdown Voltage C-B, BVCBO
Breakdown Voltage C-E, BVCEO
Quiescent Bias Current, ICQ
Power Dissipation, PDISS
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
80 mA
2.3 W
For 106 hours MTTF
192 ºC
Max
Parameter
2200
Test Frequency
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +24 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units
MHz
dBm
dB
dB
dB
dBc
dBc
mA
%
dBm
mA
V
V
Typical
940
+24
15.8
13
7
-50
-51
52
17
+32.5
1960
+24
15
11
10
-49
-62
52
17
+32.7
40
+5
+28
2140
+24
13.5
12
8
-51
-55
52
17
+32.5
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 40 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
2. The AP601 evaluation board has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 1W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 1W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 1W CW Pout.
Ordering Information
Part No.
Description
AP601-F
AP601-PCB900
AP601-PCB1960
AP601-PCB2140
High Dynamic Range 28V 1.8W HBT Amplifier
869-960 MHz Evaluation board
1930-1990 MHz Evaluation board
2110-2170 MHz Evaluation board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 1 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Typical Device Data
S-Parameters (VCC = +28 V, VPD = VBIAS = 5 V, ICQ = 40 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
30
0.
4
0.8
2.
0
6
0.
0
3.
25
0
3.
0
4.
0
4.
5.0
5.0
0.2
20
0.2
10.0
5
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
10
0.4
0
0.2
15
0.2
10.0
-10.0
-10.0
2
-0.
2
-0.
-5.
0
-4
.0
-5.
0
0
-4
.0
-3
.0
Swp Min
3e-005GHz
.0
-2
.4
-0
-0.8
2.5
-0
.6
2
.0
-2
1
1.5
Frequency (GHz)
-0.8
0.5
-1.0
0
-0
.6
.4
-0
-10
Swp Min
3e-005GHz
-1.0
-5
-3
.0
Gain (dB)
Swp Max
3.00001GHz
2.
0
DB(GMax())
1.0
1.0
0.8
6
0.
Swp Max
3.00001GHz
0.
4
DB(|S(2,1)|)
35
S22
S11
Gain / Maximum Stable Gain
40
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-9.60
-8.20
-5.47
-2.93
-2.02
-1.58
-1.69
-1.49
-1.52
-1.70
-2.01
-2.35
-2.78
-3.34
-4.04
-5.00
-5.86
-165.86
-156.90
-154.63
-164.90
-173.51
-179.10
177.02
173.06
168.28
162.02
153.47
142.58
130.51
119.29
111.03
109.46
118.67
22.23
21.64
20.66
18.00
15.57
13.78
12.16
11.02
10.09
9.48
9.14
8.93
8.73
8.50
8.34
8.17
8.03
169.20
160.86
144.37
121.17
107.46
98.50
89.73
82.27
75.95
69.46
61.67
52.54
42.07
30.77
17.30
1.87
-16.70
-46.52
-41.16
-36.22
-32.88
-31.96
-31.66
-30.97
-30.27
-29.97
-29.41
-28.83
-28.18
-27.42
-26.75
-26.07
-25.45
-25.11
80.76
69.46
55.53
35.73
24.64
18.33
22.20
13.95
9.68
5.89
1.59
-4.64
-11.50
-20.45
-30.92
-44.10
-62.65
-0.25
-0.38
-1.13
-2.85
-3.92
-4.42
-4.57
-4.73
-4.46
-4.15
-3.85
-3.63
-3.42
-3.20
-2.86
-2.39
-1.91
-5.41
-14.13
-26.14
-41.81
-51.12
-58.97
-65.06
-70.40
-74.09
-77.84
-81.69
-85.86
-90.97
-97.68
-106.74
-119.23
-134.59
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 2 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Application Circuit PC Board Layout
Circuit Board Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz
copper, εr = 2.45, Microstrip line details: width = .042”, spacing = .050”
Baseplate Configuration
Notes:
1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger
heat sink during operation and in laboratory environments to dissipate the power consumed by the
device. The use of a convection fan is also recommended in laboratory environments.
2. The area around the module underneath the PCB should not contain any soldermask in order to
maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing is recommended.
Evaluation Board Bias Procedure
Following bias procedure is recommended to ensure proper functionality of AP601 in a laboratory environment. The sequencing is not
required in the final system application.
Bias.
Vcc
Vbias
Vpd
Voltage (V)
+28
+5
+5
Turn-on Sequence:
1.
2.
3.
4.
5.
Attach input and output loads onto the evaluation board.
Turn on power supply Vcc = +28V.
Turn on power supply Vbias = +5V. At this point, the only current drawn by the device is leakage current (< 25μA).
Turn on power supply Vpd = +5V. Power supply Vcc should now be drawing typical Icq = 40 mA.
Turn on RF power.
Turn-off Sequence:
1.
2.
3.
4.
Notes:
1.
2.
3.
Turn off RF power.
Turn off power supply Vpd = +5V.
Turn off power supply Vbias = +5V.
Turn off power supply Vcc = +28V.
Icq can be adjusted with the resistor R2 from the Vpd (+5V) supply and the PIN_VPD (pin14) of the amplifier. Increasing R2
results in a lower Icq. Icq should not be increased above 80mA.
Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier. Ipd depends on the Icq
quiescent current setting. Ipd can be up to 2mA at a quiescent current setting of 40mA.
Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level. It can be up to 2mA on the AP601.
Ibias vs Output Power
2
1.5
1.5
Ibias (mA)
Ipd (mA)
Ipd vs Icq
2
1
0.5
1
0.5
0
0
0
20
40
60
Icq Setting (mA)
80
100
18
20
22
24
26
28
Output Average Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 3 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Frequency (MHz)
W-CDMA Ch. Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +24 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
880
940 Units
+24
+24 dBm
16.5 15.8
dB
8.9
14
dB
15
7.5
dB
-50
-50
dBc
-51
-51
dBc
54
52
mA
16.6
17
%
+32.5 +32.5 dBm
40
mA
+5
V
+28
V
VCC
VPD
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +24 dBm
GND
869-960 Application Circuit (AP601-PCB900)
C7
1000pF
15nH
See note 6
C26
0.5pF
See note 5
5.1 Ohm
C24
1.8pF
See note 4
3.3pF
See note 3
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C1 is at 0.710” (29.1° @ 940 MHz) from the center of C24.
4. The center of C24 is placed at 0.285” (11.7°@ 940 MHz) from the edge of the AP601 (U1).
5. The center of C26 is placed at 0.055” (2.3° @ 940 MHz) from the edge of the AP601 (U1).
6. The center of L4 is at 0.095” (3.9° @ 940 MHz) from the center of C26.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
8. The main RF trace is cut at components L3 and L4 for this particular reference design.
869-960 MHz Application Circuit Performance Plots
Gain vs. Frequency
-5
16
15
60
Collector Efficiency (%)
17
S11, S22 (dB)
Gain (dB)
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
Vcc = 28V, Icq = 40 mA, 25 ˚C
0
14
-10
-15
-20
S11
13
S22
-25
0.8
0.84
0.88
0.92
0.96
1
0.85
0.95
1
1.05
IMD vs. Output Power
CW 2-tone signal, 940 MHz, ∆f = 1 MHz, 28V, 40 mA Icq, 25 ˚C
940 MHz
894 MHz
960 MHz
1.1
-40
WCDMA 3GPP Test Model 1+64DPCH,
60% clipping, PAR = 8.6 dB @ 0.01%
10
21
25
29
33
ACPR vs. Output Power vs. Frequency
IS-95A, 9 Ch. Fwd, 940 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
IMD3L
IMD5
-50
-60
-70
-60
20
20
-40
-55
18
30
IMD3U
-50
16
960 MHz
40
17
ACPR (dBc)
920 MHz
940 MHz
Output Power (dBm)
WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C
IMD (dBc)
-45
0.9
ACLR1 vs. Output Power vs. Frequency
880 MHz
50
Frequency (GHz)
-40
869 MHz
920 MHz
0
0.8
Frequency (GHz)
ACLR1 (dBc)
Efficiency vs. Output Power vs. Frequency
S11, S22 vs. Frequency
Vcc = 28V, Icq = 40 mA, 25 ˚C
18
22
24
Average Output Power (dBm)
26
-50
-60
-70
20
22
24
26
28
30
Output Power, PEP (dBm)
17
19
21
23
25
27
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 4 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +24 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
1960 MHz
+24 dBm
15 dB
11 dB
10 dB
-49 dBc
-62 dBc
52 mA
17 %
+32.7 dBm
40 mA
+5 V
+28 V
VCC
GND
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +24 dBm
VPD
1930-1990 MHz Application Circuit (AP601-PCB1960)
C7
W = .030”
L = .980”
1000pF
C27
0.1μF
4.7 nH
See note 3
C19
2.4pF
See note 5
C5
2.2pF
See note 4
C28
0.8pF
See note 6
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L3 is placed at 0.035” (3.0° @ 1960 MHz) from the center of C5.
4. The center of C5 is placed at 0.085” (7.3° @ 1960 MHz) from the edge of the AP601 (U1).
5. The center of C19 is placed at 0.755” (64.5° @ 1960 MHz) from the edge of the AP601 (U1).
6. The center of C18 is placed at 0.300” (25.6° @ 1960 MHz) from the center of C19.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
8. The main RF trace is cut at component location L3 for this particular reference design.
1930-1990 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Frequency
14
13
1930 MHz
1960 MHz
1990 MHz
50
-10
-15
S11
-20
S22
-25
23
25
27
29
31
1.85
ACLR1 vs. Output Power vs. Frequency
1.9
1.95
2
2.05
2.1
-55
22
24
Average Output Power (dBm)
26
30
34
ACPR vs. Output Power vs. Frequency
IS-95A, 9 Ch. Fwd, 1960 MHz, Vcc = 28V, Icq = 40 mA, 25 ˚C
IMD3L
IMD3U
IMD5
-60
-50
-60
-70
-80
-65
26
Output Power (dBm)
-70
WCDMA 3GPP TM 1+64DPCH,
60% clipping, PAR = 8.6 dB
22
18
ACPR (dBc)
IMD (dBc)
-50
20
10
-40
-50
1990 MHz
18
20
CW 2-tone signal, 940 MHz, ∆f = 1 MHz, 28V, 40 mA Icq, 25 ˚C
-40
1960 MHz
16
1990 MHz
30
IMD vs. Output Power
Vcc = 28V, Icq = 40 mA, 25 ˚C
1930 MHz
-60
1960 MHz
40
Frequency (GHz)
-40
-45
1930 MHz
0
1.8
33
Output Power (dBm)
ACLR1 (dBc)
Collector Efficiency (%)
-5
S11, S22 (dB)
Gain (dB)
15
11
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
Vcc = 28V, Icq = 40 mA, 25 ˚C
0
12
Efficiency vs. Output Power vs. Frequency
S11, S22 vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
16
-80
22
24
26
28
30
32
Output Power, PEP (dBm)
17
19
21
23
25
27
Average Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 5 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +24 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
2140 MHz
+24 dBm
13.5 dB
12 dB
8 dB
-51 dBc
-55 dBc
52 mA
17 %
+32.5 dBm
40 mA
+5 V
+28 V
VCC
VPD
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +24 dBm
GND
2110-2170 MHz Application Circuit (AP601-PCB2140)
C7
1000pF
3,3pF
C22 See note 4
1.2pF
See note 3
C19
1.8pF
See note 6
C5
2.4pF
See note 5
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.090” (8.4° @ 2140 MHz) from the center of C1.
4. The center of C1 is placed at 0.910” (84.9° @ 2140 MHz) from the center of C5.
5. The center of C5 is placed at 0.100” (9.3° @ 2140 MHz) from the edge of the AP601 (U1).
6. The center of C19 is placed at 0.760” (70.9° @ 2140 MHz) from the edge of the AP601 (U1).
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
Collector Efficiency (%)
50
-5
S11, S22 (dB)
12
11
2110 MHz
10
24
S11
S22
2170 MHz
22
-15
-20
2140 MHz
9
-10
28
30
2
32
2.05
2.1
ACLR1 vs. Output Power vs. Frequency
2.15
2.2
2.25
Collector Current (mA)
2140 MHz
2170 MHz
-45
-50
-55
-60
12
16
20
24
Average Output Power (dBm)
26
28
32
ACLR1 vs. Output Power vs. Vcc
WCDMA, Icq = 40 mA, 2140 MHz, 25 ˚C
-35
26 V
2110 MHz
60
24
Output Power (dBm)
28 V
-40
2140 MHz
2170 MHz
55
50
30 V
-45
32 V
-50
-55
45
-60
40
22
10
WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C
2110 MHz
20
20
2.3
65
18
2170 MHz
30
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C
-35
16
2140 MHz
40
Frequency (GHz)
Output Power (dBm)
-40
2110 MHz
0
-25
26
ACLR1 (dBc)
Gain (dB)
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
Vcc = 28V, Icq = 40 mA, 25 ˚C
0
13
ACLR1 (dBc)
Efficiency vs. Output Power vs. Frequency
S11, S22 vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
14
16
18
20
22
24
26
Average Output Power (dBm)
16
18
20
22
24
26
Average Output Power (dBm)
Unconditionally stable circuit version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 6 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Temperature
Icc vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz
12
11
25 ˚C
85 ˚C
50
-40 ˚C
125
Collector Efficiency (%)
Collector Current (mA)
Gain (dB)
13
-40 ˚C
25 ˚C
100
85 ˚C
75
50
25
10
0
14
18
22
26
30
34
ACLR1 vs. Output Power vs. Temperature
18
22
26
30
85 ˚C
-45
-50
-55
24
85 ˚C
50
40
20
22
24
26
2150
28 V
30 V
-45
32 V
-50
18
Gain vs. Output Power vs. Vcc
22
24
26
28 V
20
30 V
32 V
15
10
5
16
18
12
IMD vs. Output Power
26 V
28 V
30 V
32 V
-40
IMD3U
32 V
20
32
IMD5
-60
-70
10
-80
0
28
26
IMD3L
-50
30 V
30
24
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, 28V, 40 mA Icq, 25 ˚C
28 V
40
22
CW tone, Icq = 40 mA, 2140 MHz, 25 ˚C
26 V
50
20
Average Output Power (dBm)
IMD (dBc)
Collector Efficiency (%)
Gain (dB)
20
60
Output Power (dBm)
25
Efficiency vs. Output Power vs. Vcc
CW tone, Icq = 40 mA, 2140 MHz, 25 ˚C
13
26
26 V
Average Output Power (dBm)
14
24
0
16
2170
22
WCDMA, Icq = 40 mA, 2140 MHz, 25 ˚C
26 V
Frequency (MHz)
24
20
Efficiency vs. Output Power vs. Vcc
-60
20
18
30
85 ˚C
16
5
Average Output Power (dBm)
-55
25 ˚C
12
10
16
Collector Efficiency (%)
ACLR1 (dBc)
-40 ˚C
9
85 ˚C
15
WCDMA, Icq = 40 mA, 2140 MHz, 25 ˚C
-40
10
25 ˚C
ACLR1 vs. Output Power vs. Vcc
-35
11
20
0
18
WCDMA, Vcc = 28V, Icq = 40 mA, +24 dBm Pout
12
34
WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz
25 ˚C
60
Gain vs. Frequency vs. Temperature
13
30
-40 ˚C
Average Output Power (dBm)
14
26
Efficiency vs. Output Power vs. Temperature
-40 ˚C
16
26
15
2130
22
25
Average Output Power (dBm)
10
2110
18
Output Power (dBm)
30
-60
11
10
14
Collector Efficiency (%)
Collector Current (mA)
25 ˚C
22
20
WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz
-40 ˚C
20
85 ˚C
30
34
70
18
25 ˚C
Icc vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 40 mA, 2140 MHz
16
40
Output Power (dBm)
-35
-40
-40 ˚C
0
14
Output Power (dBm)
ACLR1 (dBc)
CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz
150
14
Gain (dB)
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 40 mA, 2140 MHz
15
12
16
20
24
28
32
Output Power (dBm)
22
24
26
28
30
32
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 7 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
2110-2170 MHz Application Note: Changing Icq Biasing Configurations
Thermal Rise vs. Output Power vs. Icq
VPD
PIN_VPD
(V)
2.50
2.58
2.63
2.68
2.72
2.77
2.81
2.85
VCC
VPD
(V)
5
5
5
5
5
5
5
5
VBIAS
R2
(Ω)
12k
5.44k
3.48k
2.61k
2.06k
1.67k
1.42k
1.22k
Vcc = 28V
80
10 mA
Thermal Rise (˚C)
Icq
(mA)
10
20
30
40
50
60
70
80
GND
The AP601 can be configured to operate with lower bias current by varying the bias-adjust resistor – R2. The recommended
circuit configurations shown previously in this datasheet have the device operating with a 40 mA as the quiescent current (ICQ).
This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will improve upon the
efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity, but will degrade
the device’s efficiency. Measured data shown in the plots below represents the AP601 measured and configured for 2.14 GHz
applications. It is expected that variation of the bias current for other frequency applications will produce similar performance
results.
20 mA
60
30 mA
40 mA
40
C7
1000pF
50 mA
60 mA
20
70 mA
3,3pF
C22
1.2pF
C19
1.8pF
C5
2.4pF
80 mA
0
14
16
18
20
22
24
26
Output Power (dBm)
ACLR1 vs. Output Power vs. Icq
Efficiency vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
20 mA
30 mA
40 mA
50 mA
60 mA
70 mA
80 mA
-40
-50
30
100
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
70 mA
80 mA
Collector Efficiency (%)
10 mA
Collector Current (mA)
80
60
40
20
0
18
20
22
24
26
Average Output Power (dBm)
Gain vs. Output Power vs. Icq
20
22
24
Output Power (dBm)
13
12
40 mA
50 mA
60 mA
70 mA
80 mA
10
22
26
Output Power (dBm)
30
5
18
20
34
22
24
26
Average Output Power (dBm)
Efficiency vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
60
30
26
22
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
70 mA
80 mA
18
18
80 mA
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
14
30 mA
60 mA
70 mA
10
26
34
20 mA
40 mA
50 mA
15
Output Power vs. Input Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
10 mA
20
20 mA
30 mA
Average Output Power (dBm)
15
11
25
10 mA
0
18
Collector Efficiency (%)
ACLR1 (dBc)
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
120
-60
Gain (dB)
Efficiency vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
-30
10 mA
20 mA
50
30 mA
40 mA
40
50 mA
60 mA
70 mA
80 mA
30
20
10
0
4
8
12
16
20
Input Power (dBm)
18
22
26
30
34
Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 8 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
Frequency
W-CDMA Channel Power
Power Gain
ACLR
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
2350 MHz
+23 dBm
14 dB
-50 dBc
50 mA
14 %
+32.5 dBm
40 mA
+5 V
+28 V
VCC
GND
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +23 dBm
VPD
2320-2380 MHz WiBro Application Circuit
C34
C7
W = .030”
L = .590”
1000pF
C33
C32
22pF
22pF
C31
1.1pF
See note 6
C30
0.2pF
See note 5
C19
0.6pF
See note 4
C3
1.6pF
See note 3
22pF
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C3 is placed at 0.050” (5.1° @ 2.35 GHz) from the edge of the AP601 (U1).
4. The center of C19 is placed at 0.650” (66.6° @ 2.35 GHz) from the edge of the AP601 (U1).
5. The center of C30 is placed at 0.110” (11.3° @ 2.35 GHz) from the center of C19.
6. The center of C31 is placed at 0.040” (4.1° @ 2.35 GHz) from the center of C19.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
C32 C33 C34
C31
C30
C19
2320-2380 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Frequency
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 40 mA, 25 ˚C
60
Collector Efficiency (%)
15
13
12
2320 MHz
11
2350 MHz
2380 MHz
10
50
2350 MHz
2380 MHz
40
30
20
10
0
22
24
26
28
30
32
34
22
24
26
Output Power (dBm)
28
EVM vs. Output Power
ACLR1 vs. Output Power vs. Frequency
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 40 mA, 25 ˚C
2320 MHz
EVM (%)
ACLR1 (dBc)
2.5
2350 MHz
2380 MHz
-50
2.0
1.5
1.0
-55
0.5
WCDMA 3GPP TM 1+64DPCH,
60% clipping, PAR = 8.6 dB
WCDMA 3GPP TM 1+64DPCH,
60% clipping, PAR = 8.6 dB
21
22
23
24
Average Output Power (dBm)
25
2320 MHz
20
2350 MHz
2380 MHz
15
10
5
WCDMA 3GPP TM 1+64DPCH,
60% clipping, PAR = 8.6 dB
0
0.0
-60
34
25
3.0
-40
20
32
Vcc = 28V, Icq = 40 mA, 25 ˚C, 2350 MHz
Vcc = 28V, Icq = 40 mA, 25 ˚C
-45
30
Output Power (dBm)
Collector Efficiency (%)
Gain (dB)
14
2320 MHz
20
21
22
23
24
Output Power (dBm)
25
20
21
22
23
24
25
Average Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 9 of 10 May 2007 ver 1
AP601
High Dynamic Range 1.8W 28V HBT Amplifier
AP601-F Mechanical Information
This package is lead-free and RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Drawing
Outline Drawing
Product Marking
The component will be laser marked with a
“AP601-F” product label with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
Functional Pin Layout
Mounting Configuration / Land Pattern
Pin
1
2, 3, 7, 8, 12, 13
4, 5, 6
9, 10, 11
14
Backside paddle
Function
PIN_VBIAS
N/C
RF IN
RF Output / Vcc
PIN_VPD
GND
MSL / ESD Rating
MTTF vs. Junction Temperature
Thermal Specifications
Thermal Resistance, ΘJC
Referenced from peak junction to the
center of the bottomside ground paddle
Junction Temperature, TJ
For 106 hours MTTF
Rating
33.3 °C / W
192 ºC
Max Junction Temperature, TJ,max 250 ºC
For catastrophic failure
MTTF (hours)
Parameter
1.E+09
1.E+08
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes 1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection reflow
Standard:
JEDEC Standard J-STD-020
1.E+07
1.E+06
1.E+05
120
140
160
180
200
Junction Temperature (°C)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 10 of 10 May 2007 ver 1