WJ AP602 High dynamic range 4w 28v hbt amplifier Datasheet

AP602
High Dynamic Range 4W 28V HBT Amplifier
Product Features
Product Description
• 800 – 2400 MHz
• +35.7 dBm P1dB
• -52 dBc ACLR @ ½W PAVG
• -47 dBc IMD3 @ ½W PEP
• 16% Efficiency @ ½W PAVG
Functional Diagram
The AP602 is a high dynamic range power amplifier in a
lead-free/RoHS-compliant 5x6mm power DFN SMT
package. The single stage amplifier has excellent backoff
linearity, while being able to achieve high performance for
800-2400 MHz applications with up to +35.7 dBm of
compressed 1dB power.
The AP602 uses a high reliability, high voltage
InGaP/GaAs HBT process technology.
The device
• Internal Temp Compensation
incorporates proprietary bias circuitry to compensate for
• Capable of handling 7:1 VSWR @ variations in linearity and current draw over temperature.
The module does not require any negative bias voltage; an
28 Vcc, 2.14 GHz, 3W CW Pout
internal active bias allows the AP602 to operate directly off
a commonly used high voltage supply (typically +24 to
• Lead-free/RoHS-compliant
+32V). An added feature allows the quiescent bias to be
5x6 mm power DFN package
adjusted externally to meet specific system requirements.
• Internal Active Bias
The AP602 is targeted for use as a pre-driver and driver
stage amplifier in wireless infrastructure where high
linearity and high efficiency is required. This combination
makes the device an excellent candidate for next generation
multi-carrier 3G mobile infrastructure.
• Mobile Infrastructure HPA
• WiBro HPA
WCDMA, Icq = 80 mA, 2140 MHz, 25 ˚C
26 V
28 V
-45
ACLR1 (dBc)
Applications
ACLR1 vs. Output Power vs. Vcc
-40
30 V
32 V
-50
-55
-60
-65
19
21
23
25
27
29
Average Output Power (dBm)
Specifications
Typical Performance
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB
@ 0.01% Probability, 3.84 MHz BW, Vcc = +28V, Icq = 80 mA
Parameter
Operational Bandwidth
Test Frequency
Output Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +27 dBm PEP
PIN_VPD Current, Ipd
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units Min
MHz
MHz
dBm
dB
dB
dB
dBc
dBc
mA
mA
%
dBm
mA
V
V
Typ
800
2140
+27
13
9
9
-52
-47
2
112
15.7
+35.7
80
+5
+28
Absolute Maximum Rating
Parameter
Rating
Storage Temperature, Tstg
Junction Temperature, TJ
-55 to +125 ºC
RF Input Power (CW tone), Pin
Breakdown Voltage C-B, BVCBO
Breakdown Voltage C-E, BVCEO
Quiescent Bias Current, ICQ
Power Dissipation, PDISS
Input P6dB
80 V @ 0.1 mA
51 V @ 0.1 mA
160 mA
4.7 W
For 106 hours MTTF
192 ºC
Max
Parameter
2200
Test Frequency
Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
Units
MHz
dBm
dB
dB
dB
dBc
dBc
mA
%
dBm
mA
V
V
Typical
940
+27
15.5
11
6.4
-50
-62
103
17
+35.7
1960
+27
14.2
12
9
-50
-51
103
17
+35.5
80
+5
+28
2140
+27
13
9
9
-52
-47
112
15.7
+35.7
Notes:
1. The reference designs shown in this datasheet have the device optimized for WCDMA ACLR
performance at +25° C. Biasing for the amplifier is suggested at Vcc = +28V and Icq = 80 mA to
achieve the best tradeoff in terms of efficiency and linearity. Increasing Icq will improve upon the
device linearity (IMD3 and ACLR), but will decrease the efficiency performance slightly. More
information is given in the other parts of this datasheet.
2. The AP602 evaluation board has been tested for ruggedness to be capable of handling:
7:1 VSWR @ +28 Vcc, 2140 MHz, 3W CW Pout,
5:1 VSWR @ +30 Vcc, 2140 MHz, 3W CW Pout,
3:1 VSWR @ +32 Vcc, 2140 MHz, 3W CW Pout.
Ordering Information
Part No.
Description
AP602-F
AP602-PCB900
AP602-PCB1960
AP602-PCB2140
High Dynamic Range 28V 4W HBT Amplifier
869-960 MHz Evaluation board
1930-1990 MHz Evaluation board
2110-2170 MHz Evaluation board
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 1 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
Typical Device Data
S-Parameters (VCC = +28 V, VPD = VBIAS = 5 V, ICQ = 80 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads)
S11
30
1.0
0.8
0
2.
2.
0
0.
4
4
0
3.
25
3.
0
0
4.
0.2
20
0
4.
5.0
5.0
0.2
10.0
5
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
10.0
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
10
0.4
0
0.2
15
-10.0
Swp Min
0.01GHz
-
0
2.
-0
.6
.4
Swp Min
0.01GHz
-1.0
-0
.0
-2
2.5
-1.0
2
-0.8
1
1.5
Frequency (GHz)
-0
.6
0.5
-0.8
-3
.0
0
-3
-4
.0
-5.
0
.4
-0
-10
2
-0.
.0
2
-0.
-4
.0
-5.
0
0
-5
-10.0
Gain (dB)
Swp Max
3GHz
6
0.
0.8
6
0.
DB(GMax())
Swp Max
3GHz
0.
DB(|S(2,1)|)
35
S22
1.0
Gain / Maximum Stable Gain
40
The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency,
it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the marked red line.
The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments.
Freq (MHz)
50
100
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (ang)
S22 (dB)
S22 (ang)
-5.48
-4.19
-2.36
-1.26
-0.93
-0.75
-0.85
-0.77
-0.76
-0.85
-1.05
-1.30
-1.64
-2.14
-2.67
-2.98
-2.77
-168.66
-163.72
-165.46
-173.46
-177.48
-179.37
179.64
178.55
177.13
174.34
169.72
162.94
154.66
146.42
140.28
139.19
142.63
24.61
23.51
21.20
16.82
13.69
11.52
9.60
8.33
7.34
6.75
6.43
6.31
6.25
6.13
5.83
5.31
4.53
162.66
148.99
127.42
105.39
94.60
87.62
80.64
75.01
69.98
64.38
57.00
47.79
36.49
23.29
6.95
-11.57
-33.00
-43.82
-38.73
-35.02
-33.36
-33.10
-33.19
-32.66
-32.18
-31.99
-31.49
-30.96
-30.28
-29.50
-28.80
-28.30
-28.16
-28.51
67.14
56.38
38.63
20.55
12.05
7.47
16.69
8.35
4.86
1.88
-2.23
-8.68
-16.71
-28.08
-42.09
-59.43
-80.88
-0.84
-1.30
-3.13
-5.71
-6.44
-6.28
-5.87
-5.44
-4.84
-4.22
-3.65
-3.15
-2.64
-2.11
-1.57
-1.07
-0.83
-15.48
-32.29
-55.32
-79.41
-91.66
-99.86
-104.18
-108.62
-110.75
-113.24
-116.25
-120.21
-125.79
-133.06
-142.48
-154.01
-165.99
Device S-parameters are available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 2 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
Application Circuit PC Board Layout
Baseplate Configuration
Notes:
1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger
heat sink during operation and in laboratory environments to dissipate the power consumed by the
device. The use of a convection fan is also recommended in laboratory environments.
2. The area around the module underneath the PCB should not contain any soldermask in order to
maintain good RF grounding.
3. For proper and safe operation in the laboratory, the power-on sequencing is recommended.
PCB Material: 0.0147” Rogers Ultralam 2000, single layer, 1 oz Cu,
εr = 2.45, Microstrip line details: width = .042”, spacing = .050”
Evaluation Board Bias Procedure
Following bias procedure is recommended to ensure proper functionality of AP602 in a laboratory environment. The sequencing is not
required in the final system application.
Bias.
Vcc
Vbias
Vpd
Voltage (V)
+28
+5
+5
Turn-on Sequence:
1.
2.
3.
4.
5.
Attach input and output loads onto the evaluation board.
Turn on power supply Vcc = +28V.
Turn on power supply Vbias = +5V. At this point, the only current drawn by the device is leakage current (< 25µA).
Turn on power supply Vpd = +5V. Power supply Vcc should now be drawing typical Icq = 80 mA.
Turn on RF power.
Turn-off Sequence:
1.
2.
3.
4.
Notes:
1.
2.
3.
Turn off RF power.
Turn off power supply Vpd = +5V.
Turn off power supply Vbias = +5V.
Turn off power supply Vcc = +28V.
Icq can be adjusted with the resistor R2 from the Vpd (+5V) supply and the PIN_VPD (pin14) of the amplifier. Increasing R2
results in a lower Icq. Icq should not be increased above 160mA.
Vpd is used as a reference for the internal active bias circuitry. It can be used to turn on/off the amplifier. Ipd depends on the Icq
quiescent current setting. Ipd can be up to 4mA at a quiescent current setting of 160mA.
Vbias should be maintained fixed at +5V. Ibias will change based on RF input power level. It can be up to 4mA on the AP602.
Ibias vs Output Power
4
3
3
Ibias (mA)
Ipd (mA)
Ipd vs Icq
4
2
1
2
1
0
0
0
40
80
120
Icq Setting (mA)
160
200
22
24
26
28
30
32
Output Average Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 3 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
940 MHz
+27 dBm
15.5 dB
11 dB
6.4 dB
-50 dBc
-50 dBc
103 mA
17 %
+35.7 dBm
80 mA
+5 V
+28 V
VCC
C15
100pF
C30
100pF
W = .030”
L = 1.570”
C7
1000pF
2 Ohm
L10
8.2 nH
See note 5
See note 4
C19
0.4 pF
See note 6
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. C20 is not required in the final design if there is no DC signal present at the output of the
amplifier circuit.
4. The center of C24 is placed at 0.280” (11.5° @ 940 MHz) from the edge of the AP602 (U1).
5. The center of L10 is placed at 0.570” (23.4° @ 940 MHz) from the edge of the AP602 (U1).
6. The center of C19 is placed at 0.050” (2.1° @ 940 MHz) the center of L10.
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
8. The main RF trace is cut at component L3 and L4 for this particular reference design.
C30
C24
GND
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +27 dBm
VPD
869-960 Application Circuit (AP602-PCB900)
L3
L10
869-960 MHz Application Circuit Performance Plots
Gain vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C
Vcc = 28V, Icq = 80 mA, 25 ˚C
17
-5
16
15
50
-10
-15
S11
-20
14
Collector Efficiency (%)
0
S11, S22 (dB)
Gain (dB)
Efficiency vs. Output Power vs. Frequency
S11, S22 vs. Frequency
Vcc = 28V, Icq = 80 mA, 25 ˚C
18
S22
-25
13
0.84
0.88
0.92
Frequency (GHz)
0.96
0.85
0.9
0.95
1
1.05
-40
WCDMA 3GPP TM 1+64 DPCH;
PAR = 8.6 @0.01%
60% clipping, Ch. BW = 3.84 MHz;
-54
24
Output Power (dBm)
26
28
30
34
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
IMD3U
IMD5
-60
-80
22
26
Efficiency vs. Output Power vs. Frequency
-58
-62
22
25
-70
20
18
Output Power (dBm)
IMD3L
-50
-50
18
10
1.1
CW 2-tone signal, 940 MHz, ∆f = 1 MHz, 28V, 80 mA Icq, 25 ˚C
IMD (dBc)
ACLR1 (dBc)
-46
880MHz
920MHz
960MHz
20
IMD vs. Output Power
WCDMA, Vcc= 28V, Icq = 40mA, 25oC
869MHz
894MHz
940MHz
960 MHz
30
Frequency (GHz)
ACLR1 vs. Output Power vs. Frequency
-42
940 MHz
40
0
0.8
1
Collector Efficiency (%)
0.8
920 MHz
920 MHz
20
940 MHz
960 MHz
15
10
5
0
22
24
26
28
30
32
Output Power, PEP (dBm)
18
20
22
24
26
28
Average Output Power (dBm)
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 4 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
1960 MHz
+27 dBm
14.2 dB
12 dB
9 dB
-50 dBc
-51 dBc
103 mA
17 %
+35.5 dBm
80 mA
+5 V
+28 V
VCC
GND
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +27 dBm
VPD
1930-1990 MHz Application Circuit (AP602-PCB1960)
W = .030”
L = .980”
C7
C27
10pF
1000pF
L3
4.7 nH
See note 3
C2
2.7pF
See note 4
C30
2.4pF
See note 5
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L3 is placed at 0.095” (8.1° @ 1960 MHz) from the center C2.
4. The center of C2 is placed at 0.135” (11.5° @ 1960 MHz) from the edge of the AP602 (U1).
5. The center of C30 is placed at 0.580” (49.6° @ 1960 MHz) from the edge of the AP602 (U1).
6. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
7. The main RF trace is cut at component location L3 for this particular reference design.
C30
1930-1990 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
14
13
1930 MHz
-15
S11
S22
1990 MHz
-25
30
32
34
1.85
ACLR1 vs. Output Power vs. Frequency
-40
1.95
2
2.05
2.1
-50
-55
20
10
16
20
24
-60
26
Average Output Power (dBm)
28
32
36
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
IMD5
-60
-80
-65
28
Efficiency vs. Output Power vs. Frequency
-70
24
30
25
IMD3U
-50
1990 MHz
22
1990 MHz
40
Output Power (dBm)
IMD3L
1960 MHz
IMD (dBc)
ACLR1 (dBc)
1.9
CW 2-tone signal, 1960 MHz, ∆f = 1 MHz, 28V, 80 mA Icq, 25 ˚C
1930 MHz
20
1960 MHz
IMD vs. Output Power
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
-40
18
50
Frequency (GHz)
Output Power (dBm)
-45
1930 MHz
0
1.8
36
Collector Efficiency (%)
28
-10
-20
1960 MHz
26
60
Collector Efficiency (%)
-5
S11, S22 (dB)
Gain (dB)
15
11
CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C
Vcc = 28V, Icq = 80 mA, 25 ˚C
0
12
Efficiency vs. Output Power vs. Frequency
S11, S22 vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C
16
1930 MHz
20
1960 MHz
1990 MHz
15
10
5
0
22
24
26
28
30
32
Output Power, PEP (dBm)
18
20
22
24
26
28
Average Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 5 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
Frequency
Total Output Power
Power Gain
Input Return Loss
Output Return Loss
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
2015 MHz
+27 dBm
13.7 dB
12 dB
8.5 dB
-44 dBc
110 mA
16.5 %
+36 dBm
80 mA
+5 V
+28 V
VCC
VPD
VBIAS
Typical Performance at 25 °C at an
output power of +27 dBm
GND
2010-2025 MHz Application Circuit
W = .030”
L = .980”
C7
C7
1000pF
C27
10pF
100pF
1000pF
L3
4.7 nH
See note 3
C2
2.7pF
See note 4
C30
2.4pF
See note 5
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of L3 is placed at 0.095” (8.3° @ 2015 MHz) from the center of C2.
4. The center of C2 is placed at 0.135” (11.8° @ 2015 MHz) from the edge of the AP602 (U1).
5. The center of C30 is placed at 0.530” (50.9° @ 2015 MHz) from the edge of the AP602 (U1).
6. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
7. The main RF trace is cut at component location L3 for this particular reference design.
2010-2025 MHz Application Circuit Performance Plots
Gain vs. Output Power vs. Temperature
50
Collector Efficiency (%)
-5
S11, S22 (dB)
Gain (dB)
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
Vcc = 28V, Icq = 80 mA, 25 ˚C
0
14
13
12
-40 ˚C
11
10
28
-10
-15
S11
-20
25 ˚C
85 ˚C
30
32
34
36
38
-25
1.96
S22
10
2
2.02
2.04
2.06
2.08
20
24
26
32
36
IMD vs. Output Power
CW 2-tone signal, 2015 MHz, ∆f = 1 MHz, 28V, 80 mA Icq, 25 ˚C
-40
IMD3L
8
IMD3U
-50
6
4
IMD5
-60
-70
2
-80
0
-56
28
Output Power (dBm)
IMD (dBc)
Collector Efficiency (%)
-52
18
20
22
24
Average Output Power (dBm)
20
Efficiency vs. Output Power
3C-TDSCDMA, PAR = 9.6 dB
@0.01% prob, BW = 1.28MHz,
Sample clk = 32 MHz
IQ Mod Filter = 2.1 MHz
16
85 ˚C
30
10
Icq = 80mA
Icq=100mA
-48
25 ˚C
3-carrier TDSCDMA, Vcc = 28V, Icq = 140 mA, 2020 MHz
3-carrier TDSCDMA, Vcc = 28V, 2015MHz
-44
40
Frequency (GHz)
ACLR vs. Output Power vs. Icq
-40
-40 ˚C
0
1.98
Output Power (dBm)
ACLR (dBc)
Efficiency vs. Output Power vs. Temperature
S11, S22 vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 2025 MHz
15
16
18
20
22
24
Average Output Power (dBm)
26
22
24
26
28
30
32
Output Power, PEP (dBm)
Unconditionally stable version of this application circuit is available for download off of the website at: http://www.wj.com
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 6 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
Frequency
W-CDMA Channel Power
Power Gain
Input Return Loss
Output Return Loss
ACLR
IMD3 @ +27 dBm PEP
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
2140 MHz
+27 dBm
13 dB
9 dB
9 dB
-52 dBc
-47 dBc
112 mA
15.7 %
+35.7 dBm
80 mA
+5 V
+28 V
VCC
GND
VBIAS
Typical WCDMA Performance at 25 °C
at a channel power of +27 dBm
VPD
2110-2170 MHz Application Circuit (AP602-PCB2140)
W = .030”
L = .980”
C7
1000pF
See note 4
C22
0.5 pF
See note 3
See note 6
See note 5
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C22 is placed at 0.185” (17.3° @ 2140 MHz) from the center of C1.
4. The center of C1 is placed at 0.910” (84.9° @ 2140 MHz) from the center of C3.
5. The center of C3 is placed at 0.035” (3.26° @ 2140 MHz) from the edge of the AP602 (U1).
6. The center of C6 is placed at 0.510” (47.6° @ 2140 MHz) from the edge of the AP602 (U1).
7. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
Efficiency vs. Output Power vs. Frequency
S11, S22 vs. Frequency
Vcc = 28V, Icq = 80 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C
14
CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C
50
Collector Efficiency (%)
0
S11, S22 (dB)
12
2110 MHz
-15
S11
-20
2140 MHz
S22
2170 MHz
-25
11
20
-10
24
28
32
2.05
2.1
ACLR1 vs. Output Power vs. Frequency
Collector Current (mA)
2140 MHz
2170 MHz
-50
-55
-60
-65
2.2
2.25
2.3
20
25
24
27
Average Output Power (dBm)
29
28
32
36
Output Power (dBm)
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
25
2110 MHz
130
2140 MHz
120
2170 MHz
110
100
90
2110 MHz
20
2140 MHz
2170 MHz
15
10
5
0
80
23
10
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
2110 MHz
ACLR1 (dBc)
2.15
140
21
20
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
-40
19
2170 MHz
30
Frequency (GHz)
Output Power (dBm)
-45
2140 MHz
40
0
2
36
Collector Efficiency (%)
Gain (dB)
-5
13
2110 MHz
19
21
23
25
27
29
Average Output Power (dBm)
19
21
23
25
27
29
Average Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 7 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
2110-2170 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Temperature
Icc vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2140 MHz
12
-40 ˚C
25 ˚C
85 ˚C
10
60
-40 ˚C
250
Collector Efficiency (%)
Collector Current (mA)
25 ˚C
85 ˚C
200
150
100
50
20
24
28
32
20
24
Output Power (dBm)
ACLR1 vs. Output Power vs. Temperature
28
32
Collector Current (mA)
25 ˚C
85 ˚C
-45
-50
-55
120
27
85 ˚C
90
80
21
23
25
27
11
-40 ˚C
28 V
30 V
32 V
-50
-55
25
27
29
26 V
28 V
20
30 V
32 V
15
10
5
0
19
2170
23
WCDMA, Icq = 80 mA, 2140 MHz, 25 ˚C
-65
2150
21
23
25
27
29
19
21
Average Output Power (dBm)
Gain vs. Output Power vs. Vcc
23
25
27
29
Average Output Power (dBm)
Efficiency vs. Output Power vs. Vcc
CW tone, Icq = 80 mA, 2140 MHz, 25 ˚C
CW tone, Icq = 80 mA, 2140 MHz, 25 ˚C
60
Collector Efficiency (%)
14
Gain (dB)
21
Efficiency vs. Output Power vs. Vcc
26 V
Frequency (MHz)
13
26 V
28 V
30 V
32 V
12
11
26 V
50
28 V
40
30 V
32 V
30
20
10
0
20
24
28
32
36
20
24
Output Power (dBm)
28
IMD3 vs. Output Power vs. Vcc
-45
45
26 V
28 V
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 80 mA, 25 ˚C
-45
26 V
28 V
30 V
-50
32 V
-55
-60
30 V
32 V
Output Power, PEP (dBm)
34
28 V
30 V
-55
32 V
-60
-65
-65
32
26 V
-50
IMD5 (dBc)
50
IMD3 (dBc)
-40
36
IMD5 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 80 mA, 25 ˚C
55
30
32
Output Power (dBm)
OIP3 vs. Output Power vs. Vcc
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Icq = 80 mA, 25 ˚C
OIP3 (dBm)
19
25
85 ˚C
28
5
Average Output Power (dBm)
-60
25 ˚C
26
10
29
Collector Efficiency (%)
ACLR1 (dBc)
12
24
85 ˚C
15
WCDMA, Icq = 80 mA, 2140 MHz, 25 ˚C
-45
30
25 ˚C
ACLR1 vs. Output Power vs. Vcc
13
35
20
Average Output Power (dBm)
WCDMA, Vcc = 28V, Icq = 80 mA, +27 dBm Pout
40
-40 ˚C
0
19
-40
36
WCDMA, Vcc = 28V, Icq = 80 mA, 2140 MHz
100
29
32
Efficiency vs. Output Power vs. Temperature
25 ˚C
110
Gain vs. Frequency vs. Temperature
2130
28
Output Power (dBm)
-40 ˚C
14
9
2110
24
25
Average Output Power (dBm)
10
10
20
70
-60
25
20
WCDMA, Vcc = 28V, Icq = 80 mA, 2140 MHz
-40 ˚C
23
85 ˚C
30
36
130
21
25 ˚C
40
Icc vs. Output Power vs. Temperature
WCDMA, Vcc = 28V, Icq = 80 mA, 2140 MHz
19
50
Output Power (dBm)
-35
-40
-40 ˚C
0
36
Collector Efficiency (%)
Gain (dB)
13
11
ACLR1 (dBc)
CW tone, Vcc = 28V, Icq = 80 mA, 2140 MHz
300
14
Gain (dB)
Efficiency vs. Output Power vs. Temperature
CW tone, Vcc = 28V, Icq = 80 mA, 2140 MHz
15
-70
24
26
28
30
32
34
Output Power, PEP (dBm)
24
26
28
30
32
34
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 8 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
2110-2170 MHz Application Note: Changing Icq Biasing Configurations
Thermal Rise vs. Output Power vs. Icq
Vcc = 28V
80
20 mA
40 mA
60
60 mA
80 mA
40
100 mA
W = .030”
L = .980”
120 mA
20
100pF
160 mA
See note 4
0
17
19
21
23
C22
0.5 pF
See note 5
Efficiency vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
-50
-55
20 mA
100 mA
16
21
80 mA
160 mA
25
27
100
50
20 mA
100 mA
0
29
19
21
40 mA
120 mA
23
60 mA
140 mA
25
80 mA
160 mA
27
25
20
80 mA
100 mA
120 mA
140 mA
160 mA
15
10
5
0
29
19
21
23
25
27
Gain vs. Output Power vs. Icq
Output Power vs. Input Power vs. Icq
Efficiency vs. Output Power vs. Icq
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
40 mA
120 mA
60 mA
140 mA
36
80 mA
160 mA
12
11
32
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
28
32
28
24
36
50
40
30
OIP3 vs. Output Power vs. Icq
12
16
20
24
IMD3 vs. Output Power vs. Icq
80 mA
100 mA
120 mA
140 mA
160 mA
32
34
IMD5 (dBc)
IMD3 (dBc)
40 mA
60 mA
-50
-60
-70
32
36
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
-40
20 mA
28
IMD5 vs. Output Power vs. Icq
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
-40
Output Power, PEP (dBm)
24
Output Power (dBm)
50
30
160 mA
20
-30
28
120 mA
140 mA
10
-30
30
80 mA
100 mA
Input Power (dBm)
CW 2-tone signal, 2140 MHz, ∆f = 1 MHz, Vcc = 28V, 25 ˚C
35
40 mA
60 mA
20
55
40
20 mA
0
8
Output Power (dBm)
45
29
CW tone, Vcc = 28V, 2140 MHz, 25 ˚C
20
24
26
40 mA
60 mA
Average Output Power (dBm)
13
24
20 mA
Average Output Power (dBm)
14
20
30
Average Output Power (dBm)
20 mA
100 mA
15
23
60 mA
140 mA
150
Collector Efficiency (%)
19
40 mA
120 mA
Collector Efficiency (%)
Collector Current (mA)
-45
See note 6
See note 3
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
Output Power (dBm)
ACLR1 (dBc)
29
200
-40
Gain (dB)
27
Icc vs. Output Power vs. Icq
WCDMA, Vcc = 28V, 2140 MHz, 25 ˚C
OIP3 (dBm)
25
Output Power (dBm)
ACLR1 vs. Output Power vs. Icq
-65
C7
1000 pF
140 mA
-35
-60
VCC
PIN_VPD
(V)
2.53
2.61
2.67
2.73
2.79
2.84
2.89
2.94
VPD
VPD
(V)
5
5
5
5
5
5
5
5
VBIAS
R2
(ohms)
6.00k
2.76k
1.80k
1.33k
1.05k
859
723
621
Thermal Rise (˚C)
Icq
(mA)
20
40
60
80
100
120
140
160
GND
The AP602 can be configured to operate with lower bias current by varying the bias-adjust resistor – R2. The recommended
circuit configurations shown previously in this datasheet have the device operating with a 80 mA as the quiescent current (ICQ).
This biasing level represents the best tradeoff in terms of linearity and efficiency. Lowering ICQ will improve upon the
efficiency of the device, but degraded linearity. Increasing ICQ has nominal improvement upon the linearity, but will degrade
the device’s efficiency. Measured data shown in the plots below represents the AP602 measured and configured for 2.14 GHz
applications. It is expected that variation of the bias current for other frequency applications will produce similar performance
results.
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
20 mA
40 mA
60 mA
80 mA
100 mA
120 mA
140 mA
160 mA
-50
-60
-70
-80
-80
24
26
28
30
32
34
Output Power, PEP (dBm)
24
26
28
30
32
34
Output Power, PEP (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 9 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
Frequency
Total Output Power
Power Gain
ACLR
Operating Current, Icc
Collector Efficiency
Output P1dB
Quiescent Current, Icq
Vpd, Vbias
Vcc
2350 MHz
+27 dBm
13 dB
-49 dBc
110 mA
15.8 %
+36 dBm
80 mA
+5 V
+28 V
C29
VCC
W = .030”
L = .590”
C21
C7
22pF
1000pF
22pF
C28
VPD
VBIAS
Typical WCDMA Performance at 25 °C
at an output power of +27 dBm
GND
2320-2380 MHz WiBro Application Circuit
C3
2pF
See note 3
C28
0.2pF
See note 4
C29
0.8pF
See note 5
22pF
C31
1.2pF
See note 7
C30
1.1pF
See note 6
Notes:
1. The primary RF microstrip line is 50 Ω.
2. Components shown on the silkscreen but not on the schematic are not used.
3. The center of C3 is placed at 0.050” (5.1° @ 2.35 GHz) from the edge of the AP602 (U1).
4. The center of C28 is placed at 0.130” (13.3° @ 2.35 GHz) from the edge of the AP602 (U1).
5. The center of C29 is placed at 0.110” (11.3° @ 2.35 GHz) from the center of C28.
6. The center of C30 is placed at 0.165” (16.9° @ 2.35 GHz) from the center of C29.
7. The center of C31 is placed at 0.110” (11.3° @ 2.35 GHz) from the center of C30.
8. The bold-faced RF trace is for the DC bias feed. The stub’s length is approximately a ¼ λ.
C30
C31
2320-2380 MHz Application Circuit Performance Plots
W-CDMA 3GPP Test Model 1+64 DPCH, 60% clipping, PAR = 8.6 dB @ 0.01% Probability, 3.84 MHz BW
Gain vs. Output Power vs. Frequency
Efficiency vs. Output Power vs. Frequency
CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C
CW tone, Vcc = 28V, Icq = 80 mA, 25 ˚C
60
Collector Efficiency (%)
14
Gain (dB)
13
12
11
2320 MHz
10
2350 MHz
2380 MHz
9
2320 MHz
50
2350 MHz
2380 MHz
40
30
20
10
0
20
24
28
32
36
20
24
Output Power (dBm)
ACLR1 vs. Output Power vs. Frequency
Efficiency vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
25
2350 MHz
2380 MHz
-50
-55
-60
-65
2320 MHz
130
Collector Efficiency (%)
Collector Current (mA)
2320 MHz
2350 MHz
120
2380 MHz
110
100
90
80
19
21
23
25
27
Average Output Power (dBm)
36
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
140
-45
32
Icc vs. Output Power vs. Frequency
WCDMA, Vcc = 28V, Icq = 80 mA, 25 ˚C
-40
ACLR1 (dBc)
28
Output Power (dBm)
29
2320 MHz
20
2350 MHz
2380 MHz
15
10
5
0
19
21
23
25
27
Average Output Power (dBm)
29
19
21
23
25
27
29
Average Output Power (dBm)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 10 of 11 May 2007 ver 1
AP602
High Dynamic Range 4W 28V HBT Amplifier
AP602-F Mechanical Information
This package is lead-free and RoHS-compliant. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded
(maximum 245 °C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper.
Outline Drawing
Product Marking
The component will be laser marked with an
“AP602-F” product label with an alphanumeric
lot code on the top surface of the package.
Tape and reel specifications for this part will be
located on the website in the “Application
Notes” section.
Functional Pin Layout
Mounting Configuration / Land Pattern
Pin
1
2, 3, 7, 8, 12, 13
4, 5, 6
9, 10, 11
14
Backside paddle
Function
PIN_VBIAS
N/C
RF IN
RF Output / Vcc
PIN_VPD
GND
MSL / ESD Rating
MTTF vs. Junction Temperature
Thermal Specifications
Thermal Resistance, ΘJC
Referenced from peak junction to the
center of the bottomside ground paddle
Junction Temperature, TJ
6
For 10 hours MTTF
Rating
16.6 °C / W
192 ºC
Max Junction Temperature, TJ,max 250 ºC
For catastrophic failure
MTTF (hours)
Parameter
1.E+09
ESD Rating:
Value:
Test:
Standard:
Class 1B
Passes 500V to <1000V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes 1000V to <2000V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 °C convection reflow
Standard:
JEDEC Standard J-STD-020
1.E+08
1.E+07
1.E+06
1.E+05
120
140
160
180
200
Junction Temperature (°C)
Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com
Page 11 of 11 May 2007 ver 1