AP6679BGI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
BVDSS
-30V
RDS(ON)
9mΩ
ID
-48A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for all
commercial-industrial through hole applications.
G
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-48
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-30
A
1
IDM
Pulsed Drain Current
-200
A
PD@TC=25℃
Total Power Dissipation
31.3
W
PD@TA=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201203091
AP6679BGI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-30A
-
-
9
mΩ
VGS=-4.5V, ID=-20A
-
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-30A
-
60
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-30A
-
44
70
nC
Qgs
Gate-Source Charge
VDS=-24V
-
6.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
28.5
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
11
-
ns
tr
Rise Time
ID=-30A
-
67
-
ns
td(off)
Turn-off Delay Time
RG=1Ω
-
37
-
ns
tf
Fall Time
VGS=-10V
-
22
-
ns
Ciss
Input Capacitance
VGS=0V
-
3500 5600
pF
Coss
Output Capacitance
VDS=-25V
-
520
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
495
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2
4
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-30A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
34
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6679BGI-HF
240
160
o
-ID , Drain Current (A)
-ID , Drain Current (A)
200
160
V G = - 4.0 V
120
-10V
-7.0V
-6.0V
-5.0V
V G = - 4.0 V
o
T C = 150 C
-10V
-7.0 V
-6.0 V
-5.0 V
T C = 25 C
80
120
80
40
40
0
0
0
4
8
12
16
0
2
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6
8
10
Fig 2. Typical Output Characteristics
14
2.0
I D = -20 A
T C =25 ℃
I D = -30A
V G = -10V
1.8
12
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
4
-V DS , Drain-to-Source Voltage (V)
10
1.4
1.2
1.0
0.8
8
0.6
0.4
6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
2
1.6
T j =150 o C
Normalized -VGS(th)
-IS(A)
30
T j =25 o C
20
1.2
0.8
10
0.4
0
0
0
0.4
0.8
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6679BGI-HF
f=1.0MHz
5000
8
4000
C iss
V DS =-24V
I D =-30A
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
3000
4
2000
2
1000
C oss
C rss
0
0
0
20
40
60
1
80
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
Operation in this
area limited by
RDS(ON)
-ID (A)
100
100us
1ms
10
10ms
100ms
1s
DC
o
T C =25 C
Single Pulse
1
0.1
1
10
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
100
0.00001
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
60
VG
-ID , Drain Current (A)
50
QG
40
-4.5V
QGS
30
QGD
20
10
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain
Current v.s. Case Temperature
Fig 12. Gate Charge Waveform
4