AP6679BGM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
D
▼ Lower On-resistance
D
D
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S
SO-8
BVDSS
-30V
RDS(ON)
9mΩ
ID
-13.5A
S
S
Description
D
AP6679B series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
G
S
o
Absolute Maximum Ratings@Tj=25 C(unless otherwise specified)
Parameter
Symbol
.
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
-13.5
A
-10.8
A
-50
A
2.5
W
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
50
℃/W
1
201409262AP
AP6679BGM-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-13A
-
-
9
mΩ
VGS=-4.5V, ID=-8A
-
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=-13A
-
44
70
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
28
-
nC
2
td(on)
Turn-on Delay Time
VDS=-15V
-
13
-
ns
tr
Rise Time
ID=-1A
-
11
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
64
-
ns
tf
Fall Time
VGS=-10V
-
42
-
ns
Ciss
Input Capacitance
VGS=0V
-
3400 5440
pF
Coss
Output Capacitance
VDS=-25V
-
520
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
455
-
pF
Min.
Typ.
IS=-2A, VGS=0V
-
-
-1.2
V
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-13A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
35
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t < 10s ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6679BGM-HF
50
50
o
30
20
10
30
20
10
0
0
0
0
1
1
2
2
0
0
1
1
2
2
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
14
ID=-8A
T A =25 ℃
I D = - 13 A
V G =-10V
10
.
Normalized RDS(ON)
1.8
12
RDS(ON) (mΩ)
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V G = - 4.0 V
40
-ID , Drain Current (A)
40
-ID , Drain Current (A)
o
T A = 150 C
- 10 V
- 7.0 V
- 6.0 V
- 5.0 V
V G = - 4.0 V
T A = 25 C
1.6
1.4
1.2
1.0
0.8
8
0.6
0.4
6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.6
20
16
-VGS(th) (V)
-IS(A)
2.2
12
T j =150 o C
T j =25 o C
1.8
8
1.4
4
0
1
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6679BGM-HF
12
f=1.0MHz
5000
I D = -13A
V DS = -24V
4000
C iss
8
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
3000
2000
4
1000
2
C oss
C rss
0
0
0
20
40
60
80
1
100
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
100us
1ms
1
.
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
Normalized Thermal Response (R thja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja=125 oC/W
DC
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP6679BGM-HF
MARKING INFORMATION
Part Number
6679BGM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5