AP6679S/P
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
BVDSS
-30V
RDS(ON)
9mΩ
ID
-75A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
S
TO-263(S)
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP6679P) are available for low-profile applications.
G
Absolute Maximum Ratings
Symbol
Parameter
D
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
±25
V
ID@TA=25℃
Continuous Drain Current, VGS @ 10V
-75
A
ID@TA=100℃
Continuous Drain Current, VGS @ 10V
-50
A
1
IDM
Pulsed Drain Current
300
A
PD@TA=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.71
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
1.4
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data and specifications subject to change without notice
201231031
AP6679S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-30
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-30A
-
-
9
mΩ
VGS=-4.5V, ID=-24A
-
-
15
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-24A
-
34
-
S
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ±25
-
-
±100
nA
ID=-16A
-
42
67
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=-250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
25
-
nC
VDS=-15V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-16A
-
35
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
58
-
ns
tf
Fall Time
RD=0.94Ω
-
78
-
ns
Ciss
Input Capacitance
VGS=0V
-
2870 4590
pF
Coss
Output Capacitance
VDS=-25V
-
960
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
740
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-24A, VGS=0V
-
-
-1.2
V
trr
Reverse Recovery Time
IS=-16A, VGS=0V,
-
47
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
43
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP6679S/P
280
150
-ID , Drain Current (A)
-ID , Drain Current (A)
200
-6.0V
160
-4.5V
120
-10V
-8.0V
T C =150 o C
-10V
-8.0V
T C =25 o C
240
80
-6.0V
100
-4.5V
50
V G =-3.0V
V G =-3.0V
40
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0.0
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.0
1.5
2.0
2.5
Fig 2. Typical Output Characteristics
15
1.8
I D = 24A
T C =25 ℃
I D =24A
V G =10V
1.6
Normalized R DS(ON)
13
RDS(ON) (mΩ )
0.5
-V DS , Drain-to-Source Voltage (V)
11
1.4
1.2
1.0
9
0.8
0.6
7
3
5
7
9
-50
11
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
2.3
2
-IS(A)
T j =150 o C
-VGS(th) (V)
20
T j =25 o C
10
1.7
1.4
1.1
0.8
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP6679S/P
7
I D = -16A
V DS = -24V
6
VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
Ciss
C (pF)
5
4
1000
Coss
Crss
3
2
1
100
0
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
1ms
ID (A)
100
10ms
100ms
10
1s
DC
o
T C =25 C
Single Pulse
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
VDS
90%
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q