AP6680SGYT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL MOSFET WITH SCHOTTKY
DIODE
D
▼ Simple Drive Requirement
▼ Small Size & Lower Profile
▼ RoHS Compliant & Halogen-Free
Schottky Diode
G
BVDSS
RDS(ON)
ID
S
D
Description
AP6680S series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK ® 3x3 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.
30V
9mΩ
15A
D
D
D
S
S
S
G
PMPAK ® 3x3
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
30
V
+20
V
3
15
A
3
12
A
Continuous Drain Current
Continuous Drain Current
1
50
A
3.13
W
Storage Temperature Range
-55 to 150
℃
Operating Junction Temperature Range
-55 to 150
℃
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
TJ
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient 3
40
℃/W
Data and specifications subject to change without notice
1
201206211
AP6680SGYT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=12A
-
6.7
9
mΩ
VGS=4.5V, ID=8A
-
11.2
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.45
3
V
gfs
Forward Transconductance
VDS=10V, ID=12A
-
20
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
100
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=12A
-
10
16
nC
Qgs
Gate-Source Charge
VDS=15V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
10
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
22
-
ns
tf
Fall Time
VGS=10V
-
6.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
1000 1600
pF
Coss
Output Capacitance
VDS=15V
-
225
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
150
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.9
3.8
Ω
Min.
Typ.
IS=1.0A, VGS=0V
-
0.48
0.5
V
VGS=0V,
-
18
-
ns
-
8
-
nC
Source-Drain Diode
Symbol
Parameter
Test Conditions
2
VSD
Diode+Schottky Forward On Voltage
trr
Body Diode+Schottky Reverse Recovery Time IS=12A,
Qrr
Body Diode+Schottky Reverse Recovery Charge
dI/dt=100A/µs
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec ; 210oC/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6680SGYT-HF
50
50
T A =25 o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
10V
7.0V
6.0V
5.0V
V G = 4.0V
40
ID , Drain Current (A)
ID , Drain Current (A)
40
T A = 150 o C
30
20
10
30
20
10
0
0
0
1
2
3
4
0
5
V DS , Drain-to-Source Voltage (V)
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
1.8
ID=8A
T A =25 ℃
I D =12A
V G =10V
1.6
Normalized RDS(ON)
RDS(ON) (mΩ)
14
12
10
1.4
1.2
1.0
8
0.8
6
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
2.0
I D =10mA
10
Normalized VGS(th)
1.6
IS(A)
8
T j =150 o C
6
T j =25 o C
1.2
0.8
4
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6680SGYT-HF
I D = 12 A
V DS =15V
C iss
1000
8
800
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1200
10
6
600
4
400
2
C oss
C rss
200
0
0
0
4
8
12
16
20
1
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
100us
10
1ms
1
10ms
100ms
0.1
1s
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
100
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthia=210 ℃/W
DC
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
20
VG
ID , Drain Current (A)
16
QG
4.5V
12
QGS
QGD
8
4
Charge
Q
0
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 11. Maximum Continuous Drain
Current v.s. Ambient Temperature
Fig 12. Gate Charge Waveform
4