AP6681GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
▼ SO-8 Compatible
D
▼ Simple Drive Requirement
BVDSS
RDS(ON)
ID
-30V
3.1mΩ
-135A
G
▼ RoHS Compliant & Halogen-Free
S
D
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
D
D
D
®
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink.
S
S
S
G
®
PMPAK 5x6
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current (Chip), V GS @ 10V
ID@TA=25℃
ID@TA=70℃
-135
A
3
-33
A
3
-26.4
A
-200
A
Continuous Drain Current , VGS @ 10V
Continuous Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
83.3
W
PD@TA=25℃
Total Power Dissipation
5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
1.5
℃/W
25
℃/W
1
201211221
AP6681GMT-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-30
-
-
V
VGS=-10V, ID=-20A
-
2.7
3.1
mΩ
VGS=-4.5V, ID=-20A
-
3.9
4.6
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-1.45
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-20A
-
66
-
S
IDSS
Drain-Source Leakage Current
VDS=-24V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-20A
-
94
150
nC
Qgs
Gate-Source Charge
VDS=-15V
-
25
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
38
-
nC
td(on)
Turn-on Delay Time
VDS=-15V
-
20
-
ns
tr
Rise Time
ID=-1A
-
14
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
210
-
ns
tf
Fall Time
VGS=-10V
-
84
-
ns
Ciss
Input Capacitance
VGS=0V
-
13800 22080
pF
Coss
Output Capacitance
VDS=-15V
-
1060
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
800
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.7
5.4
Ω
Min.
Typ.
IS=-20A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-10A, VGS=0V,
-
45
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
50
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 60 oC/W at steady state.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6681GMT-HF
200
200
T C =25 o C
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
160
-ID , Drain Current (A)
-ID , Drain Current (A)
160
T C = 150 o C
120
80
40
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
120
80
40
0
0
0
1
2
3
4
5
6
0
2
-V DS , Drain-to-Source Voltage (V)
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
5
1.6
I D = -20A
V G = -10V
I D = -20 A
T C =25 ℃
Normalized RDS(ON)
RDS(ON) (mΩ)
1.4
4
3
1.2
1.0
0.8
2
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
2.0
I D = -250uA
Normalized VGS(th)
1.6
-IS(A)
20
o
o
T j =150 C
T j =25 C
1.2
0.8
10
0.4
2.01E+09
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6681GMT-HF
f=1.0MHz
16000
8
C iss
12000
6
C (pF)
-VGS , Gate to Source Voltage (V)
I D = -20 A
V DS = -15V
4
8000
2
4000
C oss
C rss
0
0
0
40
80
120
1
160
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100us
Operation in this area
limited by RDS(ON)
-ID (A)
100
Normalized Thermal Response (Rthjc)
1000
1ms
10ms
100ms
10
o
T C =25 C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + T c
0.01
Single Pulse
0.01
1
0.1
1
10
0.00001
100
0.0001
0.001
0.01
0.1
1
10
-V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
160
V DS = -5V
-ID , Drain Current (A)
-ID , Drain Current (A)
80
60
40
T j =150 o C
120
80
40
20
o
2.01E+09
T j =25 C
T j =-40 o C
0
0
0
1
2
3
4
5
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
6
25
50
75
100
125
150
o
T C , Case Temperature ( C )
Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4