AP6900GSM
Pb Free Plating Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL MOSFET WITH
SCHOTTKY DIODE
CH-1
S1/D2
S1/D2
S1/D2
G1
▼ Simple Drive Requirement
▼ DC-DC Converter Suitable
▼ Fast Switching Performance
S2/A
G2
SO-8
CH-2
D1
D1
Description
BVDSS
30V
RDS(ON)
30mΩ
ID
BVDSS
RDS(ON)
ID
5.7A
30V
22mΩ
9.8A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
D1
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G1
N-Channel 1
MOSFET
S1/D2
Schottky Diode
G2
N-Channel 2
MOSFET
Absolute Maximum Ratings
Symbol
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Parameter
VDS
S2/A
Units
Channel-1
Channel-2
30
30
V
±20
±20
V
Continuous Drain Current
3
5.7
9.8
A
Continuous Drain Current
3
4.6
7.8
A
20
30
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.4
2.2
W
Linear Derating Factor
0.01
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a (CH-1)
Rthj-a (CH-2)
Value
Parameter
Units
Typ.
Max.
Thermal Resistance Junction-ambient
3
70
90
℃/W
Thermal Resistance Junction-ambient
3
42
55
℃/W
Data and specifications subject to change without notice
201121063-1/9
AP6900GSM
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.01
-
V/℃
VGS=10V, ID=5A
-
-
30
mΩ
VGS=4.5V, ID=3A
-
-
37
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=5A
-
5.7
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=6A
-
9
15
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
8
-
ns
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=15Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
970
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.6
-
Ω
Min.
Typ.
IS=1.2A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
2/9
AP6900GSM
CH-2 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
30
-
-
V
-
0.1
-
V/℃
VGS=10V, ID=9A
-
-
22
mΩ
VGS=4.5V, ID=7A
-
-
29
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=9A
-
11
-
S
VDS=30V, VGS=0V
-
-
100
uA
Drain-Source Leakage Current ( Tj=70 C)
VDS=24V, VGS=0V
-
-
1
mA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=250uA
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Max. Units
Qg
Total Gate Charge
ID=7A
-
25
40
nC
Qgs
Gate-Source Charge
VDS=24V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
7
-
nC
VDS=20V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=5.7Ω,VGS=10V
-
26
-
ns
tf
Fall Time
RD=20Ω
-
12
-
ns
Ciss
Input Capacitance
VGS=0V
-
1170 1860
pF
Coss
Output Capacitance
VDS=25V
-
205
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
142
-
pF
Gate Resistance
f=1.0MHz
-
1.7
-
Ω
Min.
Typ.
IS=2.6A, VGS=0V
-
-
1.2
V
Is=7A, VGS=0V,
-
21
-
ns
dI/dt=100A/µs
-
16
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10 sec.
3/9
AP6900GSM
o
Schottky Specifications@Tj=25 C(unless otherwise specified)
Symbol
VF
Irm
CT
Parameter
Forward Voltage Drop
Test Conditions
IF=1.0A
Min.
Typ.
-
0.47
Max. Units
0.5
V
Maximum Reverse Leakage Current
Vr=30V
-
0.004
0.2
mA
Maximum Reverse Leakage Current
Vr=30V,Tj=100℃
-
0.5
1
mA
Junction Capacitance
Vr=10V
-
66
-
pF
4/9
AP6900GSM
Channel-1
40
40
o
30
ID , Drain Current (A)
T A = 25 C
ID , Drain Current (A)
TA=150oC
10V
7.0V
5.0V
4.5V
20
10
10V
7.0V
5.0V
30
4.5V
20
10
V G =3.0V
V G =3.0V
0
0
0
1
2
3
4
5
6
0
1
V DS , Drain-to-Source Voltage (V)
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
38
1.6
ID=3A
34
ID=5A
V G =10V
1.4
o
Normalized RDS(ON)
T A =25 C
30
RDS(ON) (mΩ )
2
26
22
1.2
1.0
0.8
18
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
7
1.6
6
1.3
Normalized VGS(th) (V)
5
IS(A)
4
T j =150 o C
T j =25 o C
3
2
1.0
0.7
1
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
T j ,Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
5/9
AP6900GSM
Channel-1
f=1.0MHz
12
VGS , Gate to Source Voltage (V)
1000
C iss
I D =6A
V DS =24V
10
C (pF)
8
6
C oss
C rss
100
4
2
10
0
0
4
8
12
1
16
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthja)
100
10
1ms
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1
10ms
100ms
1s
10s
DC
0.1
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja =135℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
6/9
AP6900GSM
Channel-2
20
20
o
T A = 25 C
T A =150 C
ID , Drain Current (A)
ID , Drain Current (A)
15
10V
7.0V
5.0V
4.5V
o
10V
7.0V
5.0V
4.5V
10
5
15
10
V G = 3.0V
5
V G = 3.0V
0
0
0
1
2
3
0
1
2
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
26
24
ID=7A
RDS(ON) (mΩ)
Normalized RDS(ON)
T A =25 C
22
ID=9A
V G =10V
1.4
o
20
18
1.2
1.0
16
0.8
14
12
0.6
2
4
6
8
10
-50
0
50
100
150
o
V GS ,Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.2
1.1
IS (A)
Normalized Vth (V)
1
T j =150 o C
T j =25 o C
0.1
1.0
0.9
0.8
0.7
0.01
0
0.4
0.8
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
7/9
AP6900GSM
Channel-2
f=1.0MHz
VGS , Gate to Source Voltage (V)
14
10000
ID=7A
V DS =24V
12
C (pF)
10
8
C iss
1000
6
4
C oss
2
C rss
0
100
0
5
10
15
20
25
30
35
1
5
9
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
ID (A)
13
V DS , Drain-to-Source Voltage (V)
1ms
10ms
1
100ms
1s
o
T A =25 C
Single Pulse
0.1
DC
Duty factore=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
8/9
AP6900GSM
Schottky
10
10
IR , Reverse Current (mA)
1
IF , Forward Current (A)
30V
0.1
24V
0.01
0.001
0.0001
o
o
T j =150 C
T j =25 C
1
0
25
50
75
100
125
0
0.3
0.6
0.9
1.2
1.5
V F , Forward Voltage Drop (V)
o
T j , Junction Temperature ( C)
Fig 1. Reverse Current vs Junction Temperature
Fig 2. Typical Forward Characteristics
f=1.0MHz
C ,Capacitance (pF)
1000
100
10
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 3. Typical Junction Capacitance
9/9