AP6921GMT-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
D1
▼ Simple Drive Requirement
▼ Easy for Synchronous Buck
CH-1
G1
Converter Application
▼ RoHS Compliant & Halogen-Free
D2/S1
CH-2
G2
Description
S2
Advanced Power MOSFETs from APEC provide
the designer with the best combination of fast
switching, ruggedized device design, low onresistance and cost-effectiveness.
BVDSS
30V
RDS(ON)
11.5mΩ
ID
BVDSS
RDS(ON)
ID
34A
30V
5mΩ
74A
G2
S2
S2
S2
G2 S2 S2 S2
S1/D2
The control MOSFET (CH-1) and synchronous
MOSFET (CH-2) co-package for synchronous buck
converters.
G1
D1
D1
D1
D1
G1 D1 D1 D1
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Units
Rating
CH-1
CH-2
VDS
Drain-Source Voltage
30
30
V
VGS
Gate-Source Voltage
+20
+20
V
ID@TC=25℃
Drain Current (Chip Limited) , VGS @ 10V
34
74
A
3
ID@TA=25℃
Drain Current , VGS @ 10V
13.2
22.7
A
ID@TA=70℃
3
10.5
18.2
A
40
60
A
3.13
3.9
W
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rating
CH-1
CH-2
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
6
3
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient3
40
32
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient4
70
60
℃/W
Data & specifications subject to change without notice
1
201412174
AP6921GMT-HF
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=10A
-
8.9
11.5
mΩ
VGS=4.5V, ID=6A
-
17.2
21.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.4
3
V
gfs
Forward Transconductance
VDS=10V, ID=10A
-
22
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=10A
-
9
14.5
nC
Qgs
Gate-Source Charge
VDS=15V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
7
-
ns
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
18
-
ns
tf
Fall Time
VGS=10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
700
1120
pF
Coss
Output Capacitance
VDS=15V
-
130
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Min.
Typ.
IS=10A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
12
-
nC
2
AP6921GMT-HF
o
CH-2 Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=18A
-
4
5
mΩ
VGS=4.5V, ID=10A
-
6.1
8
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
1.5
3
V
gfs
Forward Transconductance
VDS=10V, ID=18A
-
50
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=18A
-
14
22
nC
Qgs
Gate-Source Charge
VDS=15V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
8
-
nC
td(on)
Turn-on Delay Time
VDS=15V
-
9
-
ns
tr
Rise Time
ID=1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
25
-
ns
tf
Fall Time
VGS=10V
-
14
-
ns
Ciss
Input Capacitance
VGS=0V
-
1170 1870
pF
Coss
Output Capacitance
VDS=15V
-
345
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
220
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.5
3
Ω
Min.
Typ.
IS=18A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=18A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t <10sec.
2
4.Surface mounted on 1 in copper pad of FR4 board, on steady-state
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP6921GMT-HF
Channel-1
50
50
10V
7.0V
6.0V
5.0V
V G = 4.0V
ID , Drain Current (A)
40
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =150 C
40
ID , Drain Current (A)
T A =25 o C
30
20
10
30
20
10
0
0
0
1
2
3
4
5
0
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
23
I D =10A
V G =10V
I D =6A
Normalized RDS(ON)
T A =25 o C
RDS(ON) (mΩ)
17
1.6
1.2
11
0.8
0.4
5
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
8
1.6
6
T j =25 o C
T j =150 o C
IS(A)
Normalized VGS(th)
I D =1mA
4
2
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP6921GMT-HF
Channel-1
10
1000
8
800
6
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1200
I D =10A
V DS =15V
C iss
600
4
400
2
200
C oss
C rss
0
0
0
4
8
12
16
1
20
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
10
ID (A)
100us
1ms
1
10ms
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
Duty factor = 0.5
Operation in this
area limited by
RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=70 oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
50
V DS =5V
VG
T j =25 o C
T j =150 o C
ID , Drain Current (A)
40
QG
4.5V
30
QGS
QGD
20
10
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
5
AP6921GMT-HF
Channel-2
60
50
10V
7.0V
6.0V
5.0V
ID , Drain Current (A)
50
10V
7.0V
6.0V
5.0V
V G =4.0V
o
T A =150 C
40
ID , Drain Current (A)
T A =25 o C
40
V G =4.0V
30
20
30
20
10
10
0
0
0
1
2
3
0
4
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
7
I D =18A
V G =10V
I D =10A
Normalized RDS(ON)
T A =25 o C
6
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
5
1.6
1.2
0.8
4
0.4
3
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2.0
16
1.6
12
IS(A)
T j =150 o C
Normalized VGS(th)
I D =1mA
T j =25 o C
8
4
1.2
0.8
0.4
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP6921GMT-HF
Channel-2
10
f=1.0MHz
2000
8
1600
6
1200
C (pF)
VGS , Gate to Source Voltage (V)
I D 18A
V DS =15V
4
800
2
400
C iss
C oss
C rss
0
0
0
5
10
15
20
25
1
30
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
100us
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
DC
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
Duty factor = 0.5
Operation in this area
limited by RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x R thja + T a
Rthja=60 oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS ,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
160
ID , Drain Current (A)
V DS =5V
VG
T j =25 o C
T j =150 o C
120
QG
4.5V
QGS
80
QGD
40
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
7
AP6921MT-HF
MARKING INFORMATION
6921GMT
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code : MT
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
8