AP730P
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Dynamic dv/dt Rating
BVDSS
400V
▼ Repetitive Avalanche Rated
RDS(ON)
1.0Ω
▼ Fast Switching
ID
5.5A
▼ Simple Drive Requirement
G
D
TO-220
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching ,
ruggedized device design , low on-resistance and cost-effectiveness.
D
The TO-220 package is universally preferred for all commercial-industrial
applications. The device is suited for switch mode power supplies ,DCAC converters and high current high speed switching circuits.
G
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
400
V
VGS
Gate-Source Voltage
± 30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
5.5
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
3.5
A
1
IDM
Pulsed Drain Current
23
A
PD@TC=25℃
Total Power Dissipation
74
W
0.59
W/℃
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
260
mJ
IAR
Avalanche Current
5.5
A
EAR
Repetitive Avalanche Energy
7
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
1.7
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200219032
AP730P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
400
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.36
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=2.75A
-
-
1
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=2.75A
-
30
-
S
VDS=400V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=320V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=5.5A
-
35
-
nC
VGS=0V, ID=250uA
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=320V
-
3.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
20
-
nC
VDD=200V
-
8
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=5.5A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
47
-
ns
tf
Fall Time
RD=36Ω
-
18
-
ns
Ciss
Input Capacitance
VGS=0V
-
565
-
pF
Coss
Output Capacitance
VDS=25V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
38
-
pF
Min.
Typ.
-
-
5.5
A
-
-
23
A
-
-
1.5
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.5V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
3
Forward On Voltage
1
Tj=25℃, IS=5.5A, VGS=0V
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=15mH , RG=25Ω , IAS=5.5A.
3.Pulse width <300us , duty cycle <2%.
Max. Units
AP730P
4
7
T C =25 o C
T C =150 o C
V G =10V
6
V G =10V
V G =7.0V
V G =7.0V
V G =6.0V
3
ID , Drain Current (A)
ID , Drain Current (A)
V G =6.0V
5
4
3
V G =5.0V
2
V G =5.0V
2
1
V G =4.0V
1
V G =4.0V
0
0
0
2
4
6
8
10
12
14
0
2
V DS , Drain-to-Source Voltage (V)
4
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3
1.2
I D =2.75A
V G =10V
2.5
Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1
2
1.5
1
0.9
0.5
0
0.8
-50
0
50
100
o
T j , Junction Temperature ( C )
Fig 3. Normalized BVDSS v.s. Junction
Temperature
150
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP730P
6
80
5
4
PD (W)
ID , Drain Current (A)
60
3
40
2
20
1
0
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C )
o
T c , Case Temperature ( C )
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (R thjc)
DUTY=0.5
10
ID (A)
10us
100us
1
1ms
10ms
T c =25 o C
Single Pulse
0.2
0.1
0.1
0.05
PDM
t
0.02
0.01
T
SINGLE PULSE
Duty factor = t/T
Peak Tj = P DM x Rthjc + TC
100ms
0
0.01
1
10
100
1000
V DS (V)
Fig 7. Maximum Safe Operating Area
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP730P
f=1.0MHz
10000
16
I D =5.5A
V DS =80V
12
V DS =120V
10
Ciss
V DS =160V
C (pF)
VGS , Gate to Source Voltage (V)
14
8
100
Coss
6
Crss
4
2
0
1
0
5
10
15
20
25
30
35
40
45
50
1
11
21
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
3.6
10
T j = 25 o C
3.1
VGS(th) (V)
IS (A)
T j = 150 o C
1
2.6
0.1
2.1
1.6
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
o
T j , Junction Temperature ( C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP730P
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5x RATED VDS
G
+
10%
VGS
S
10 V
VGS
-
td(on)
Fig 13. Switching Time Circuit
tr
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
10V
0.8 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
+
1~ 3 mA
IG
ID
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q