AP90T03GS
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On- resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
4mΩ
ID
G
75A
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
3
Rating
Units
30
V
±20
V
ID@Tc=25℃
Continuous Drain Current, VGS@10V
75
A
ID@Tc=100℃
Continuous Drain Current, VGS@10V
63
A
1
IDM
Pulsed Drain Current
350
A
PD@Tc=25℃
Total Power Dissipation
96
W
Linear Derating Factor
0.7
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
1.3
℃/W
62
℃/W
1
200802183
AP90T03GS
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
30
-
-
V
VGS=10V, ID=45A
-
-
4
mΩ
VGS=4.5V, ID=30A
-
-
6
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
0.8
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=150 C)
VDS=24V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=40A
-
60
96
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
8.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
38
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
14
-
ns
tr
Rise Time
ID=30A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
66
-
ns
tf
Fall Time
RD=0.5Ω
-
120
-
ns
Ciss
Input Capacitance
VGS=0V
-
4090 6540
pF
Coss
Output Capacitance
VDS=25V
-
1010
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
890
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
51
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
63
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A, calculated continuous current
based on maximum allowable junction temperature is 125A.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
AP90T03GS
200
160
o
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
160
T C = 1 50 o
140
ID , Drain Current (A)
T C =25
120
V G =3.0V
80
10V
7.0V
5.0V
4.5V
V G =3.0V
120
100
80
60
40
40
20
0
0
0
1
2
0
3
Fig 1. Typical Output Characteristics
2
3
4
5
Fig 2. Typical Output Characteristics
2.0
6.0
I D =20A
I D = 45
A
1.8
o
Normalized RDS(ON)
T C =25
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
5.0
4.0
1.5
1.3
1.0
0.8
0.5
0.3
3.0
0.0
2
4
6
8
10
-50
Fig 3. On-Resistance v.s. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2
15
1.5
o
T j =25
o
VGS(th) (V)
T j =150
Is (A)
0
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
10
5
1
0.5
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP90T03GS
f=1.0MHz
10000
14
I D = 40
C iss
V DS =15V
V DS =20V
V DS =24V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
C oss
1000
C rss
4
2
0
100
0
20
40
60
80
100
120
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
Normalized Thermal Response (Rthjc)
1
ID (A)
100us
1ms
10
10ms
100ms
T c =25 o C
Single
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
SYMBOLS
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
D
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
E
9.70
10.10
10.50
e
2.04
2.54
3.04
L2
-----
1.50
-----
L3
4.50
4.90
5.30
L4
-----
1.50
----
b1
L2
L3
b
e
L4
Millimeters
A
A2
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c θ
c1
A1
Part Marking Information & Packing : TO-263
Part Number
Package Code
XXXXXS
90T03GS
meet Rohs requirement
YWWSSS
LOGO
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5