AP90T03GS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On- resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
30V
RDS(ON)
4mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
75A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
G D
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Rating
Units
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+20
V
ID@Tc=25℃
Continuous Drain Current, VGS@10V3
75
A
ID@Tc=100℃
Continuous Drain Current, VGS@10V
63
A
350
A
96
W
3.12
W
VDS
Parameter
1
IDM
Pulsed Drain Current
PD@Tc=25℃
Total Power Dissipation
4
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
4
Value
Units
1.3
℃/W
40
℃/W
1
201209184
AP90T03GS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
30
-
-
V
VGS=10V, ID=45A
-
-
4
mΩ
VGS=4.5V, ID=30A
-
-
6
mΩ
0.8
-
3
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=10V, ID=30A
-
55
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=125 C) VDS=24V ,VGS=0V
-
-
250
uA
o
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge2
ID=40A
-
60
96
nC
Qgs
Gate-Source Charge
VDS=24V
-
8.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
38
-
nC
ns
2
td(on)
Turn-on Delay Time
VDS=15V
-
14
-
tr
Rise Time
ID=30A
-
83
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
66
-
ns
tf
Fall Time
VGS=10V
-
120
-
ns
Ciss
Input Capacitance
VGS=0V
-
4090 6540
pF
Coss
Output Capacitance
VDS=25V
-
1010
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
890
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=30A, VGS=0V,
-
51
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
63
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A, calculated continuous current
based on maximum allowable junction temperature is 125A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP90T03GS-HF
200
160
o
10V
7.0V
5.0V
4.5V
ID , Drain Current (A)
160
T C = 1 50
140
ID , Drain Current (A)
T C =25
120
V G =3.0V
80
o
10V
7.0V
5.0V
4.5V
V G =3.0V
120
100
80
60
40
40
20
0
0
0
1
2
0
3
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
6.0
I D =20A
I D = 45
A
1.8
o
Normalized RDS(ON)
T C =25
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
5.0
1.5
1.3
1.0
0.8
4.0
0.5
0.3
3.0
0.0
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
20
2
15
1.5
o
T j =25
o
VGS(th) (V)
T j =150
Is (A)
0
T j , Junction Temperature ( o C)
10
1
0.5
5
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP90T03GS-HF
12
f=1.0MHz
10000
I D = 40
V DS =15V
V DS =20V
V DS =24V
8
C iss
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C oss
1000
C rss
4
2
0
100
0
20
40
60
80
100
1
120
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
100
Normalized Thermal Response (Rthjc)
1
ID (A)
100us
1ms
10
10ms
100ms
DC
T c =25 o C
Single
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS ,Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4