AP9468GM
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-resistance
D
D
▼ Simple Drive Requirement
D
D
▼ Fast Switching Characteristic
G
SO-8
S
S
BVDSS
40V
RDS(ON)
7mΩ
ID
14.6A
S
Description
D
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
G
S
The SO-8 package is widly preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as
DC/DC converters.
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
40
V
± 20
V
3
14.6
A
3
11.7
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
60
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
201015071-1/4
AP9468GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Test Conditions
Typ.
VGS=0V, ID=250uA
40
-
-
V
VGS=10V, ID=14A
-
-
7
mΩ
VGS=4.5V, ID=7A
-
-
9
mΩ
0.5
-
2
V
VDS=VGS, ID=250uA
Max. Units
VDS=10V, ID=14A
-
14
-
S
o
VDS=40V, VGS=0V
-
-
10
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=32V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=14A
-
32
51
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
2
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=32V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
16
-
nC
VDS=20V
-
10
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
56
-
ns
tf
Fall Time
RD=20Ω
-
26
-
ns
Ciss
Input Capacitance
VGS=0V
-
2235 3580
pF
Coss
Output Capacitance
VDS=25V
-
365
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
325
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
IS=2.1A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=14A, VGS=0V,
-
33
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
33
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2/4
AP9468GM
40
40
10V
7.0V
5.0V
4.5V
V G =3.0V
30
10V
7.0V
5.0V
4.5V
V G =3.0V
T A = 150 o C
30
ID , Drain Current (A)
ID , Drain Current (A)
T A = 25 o C
20
10
0
20
10
0
0
0
1
1
2
2
0
0
1
1
2
2
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
8
1.9
I D = 14 A
V G =10V
ID=7A
T A =25 ℃
7
RDS(ON) (mΩ)
Normalized RDS(ON)
1.4
6
0.9
0.4
5
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.6
T j =150 o C
T j =25 o C
8
Normalized VGS(th) (V)
1.2
IS(A)
6
4
0.8
0.4
2
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9468GM
16
f=1.0MHz
10000
12
V DS = 20 V
V DS = 24 V
V DS = 32 V
C iss
C (pF)
VGS , Gate to Source Voltage (V)
I D = 14 A
8
1000
C oss
C rss
4
0
100
0
20
40
60
80
1
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=125 oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : SO-8
D
8
7
Millimeters
6
5
E1
1
2
3
E
4
e
SYMBOLS
MIN
NOM
MAX
A
1.35
1.55
1.75
A1
0.10
0.18
0.25
B
0.33
0.41
0.51
C
0.19
0.22
0.25
D
4.80
4.90
5.00
E1
3.80
3.90
4.00
E
5.80
6.15
6.50
L
0.38
0.71
1.27
θ
0
4.00
8.00
1.27 TYP
e
B
A
A1
DETAIL A
L
1.All Dimension Are In Millimeters.
2.Dimension Does Not Include Mold Protrusions.
c
DETAIL A
Part Marking Information & Packing : SO-8
Part Number Package Code
meet Rohs requirement
9468GM
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
θ