AP9563GK
RoHS-compliat Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
S
▼ Fast Switching Characteristic
D
SOT-223
BVDSS
-40V
RDS(ON)
40mΩ
ID
-6.8A
G
D
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, low on-resistance and costeffectiveness.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-40
V
+25
V
3
-6.8
A
3
-5.4
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-30
A
PD@TA=25℃
Total Power Dissipation
2.8
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
45
℃/W
1
201208013
AP9563GK
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
-40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
-
-0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-6A
-
-
40
mΩ
VGS=-4.5V, ID=-4A
-
-
60
mΩ
VGS=0V, ID=-250uA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-6A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+25V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-6A
-
20
30
nC
Qgs
Gate-Source Charge
VDS=-32V
-
4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
10
-
nC
td(on)
Turn-on Delay Time
VDS=-20V
-
12
-
ns
tr
Rise Time
ID=-1A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
70
-
ns
tf
Fall Time
VGS=-10V
-
36
-
ns
Ciss
Input Capacitance
VGS=0V
-
1600 2560
pF
Coss
Output Capacitance
VDS=-25V
-
240
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
185
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.8
8.7
Ω
Min.
Typ.
o
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-2.2A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-6A, VGS=0V,
-
28
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
30
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9563GK
50
50
-10V
-7.0V
-5.0V
-4.5V
T A = 25 C
-ID , Drain Current (A)
40
TA=150 C
40
30
20
V G = - 3 .0V
10
30
20
V G = - 3 .0V
10
0
0
0
3
6
9
12
15
0
3
6
9
12
15
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
65
ID=-6A
V G =-10V
ID=-4A
T A =25 ℃
1.6
Normalized RDS(ON)
55
RDS(ON) (mΩ)
-10V
-7.0V
-5.0V
-4.5V
o
-ID , Drain Current (A)
o
45
35
1.2
0.8
25
0.4
2
4
6
8
10
-50
0
50
100
150
o
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
6
Normalized -VGS(th)
1.4
-IS(A)
4
T j =150 o C
T j =25 o C
1.1
0.8
2
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9563GK
f=1.0MHz
10000
I D = -6A
V DS = -32V
10
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
C iss
1000
4
C oss
2
C rss
100
0
0
10
20
30
40
1
50
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
100us
Operation in this area
limited by RDS(ON)
10
1ms
10ms
1
100ms
1s
0.1
T A =25 o C
Single Pulse
Normalized Thermal Response (Rthja)
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=120 oC/W
DC
0.01
0.001
0.01
0.1
1
10
100
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
-ID , Drain Current (A)
V DS =-5V
T j =25 o C
20
QG
T j =150 o C
-4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4