AP9575AGS-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
-60V
RDS(ON)
64mΩ
ID
G
-17A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-17
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-11
A
1
IDM
Pulsed Drain Current
-60
A
PD@TC=25℃
Total Power Dissipation
36
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
3
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Data and specifications subject to change without notice
Value
Units
3.5
℃/W
40
℃/W
1
201105171
AP9575AGS-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-12A
-
-
64
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-9A
-
12
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-12A
-
35
56
nC
Qgs
Gate-Source Charge
VDS=-48V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
12
-
nC
td(on)
Turn-on Delay Time
VDS=-30V
-
12
-
ns
tr
Rise Time
ID=-12A
-
23
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
45
-
ns
tf
Fall Time
VGS=-10V
-
60
-
ns
Ciss
Input Capacitance
VGS=0V
-
1440 2300
pF
Coss
Output Capacitance
VDS=-25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-12A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-12A, VGS=0V,
-
43
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
75
-
nC
Notes:
1.Pulse width limited Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9575AGS-HF
60
40
-10V
-7.0V
40
-5.0V
-4.5V
20
V G =-3.0V
30
-5.0V
20
-4.5V
V G =- 4 .0V
10
0
0
0
2
4
6
8
10
0
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
210
2.0
I D = -9 A
T C =25 ℃
I D = - 12 A
V G =-10V
Normalized RDS(ON)
1.8
170
RDS(ON) (mΩ )
-10V
-7.0V
TC=150oC
-ID , Drain Current (A)
-ID , Drain Current (A)
T C =25 o C
130
90
1.6
1.4
1.2
1.0
0.8
0.6
50
0.4
2
4
6
8
10
-50
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
16
3.0
12
2.5
-VGS(th) (V)
-IS(A)
Fig 3. On-Resistance v.s. Gate Voltage
T j =150 o C
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
T j =25 o C
8
4
2.0
1.5
0
1.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
12
2400
10
2000
8
f=1.0MHz
1600
I D = -12A
V DS = -48V
C (pF)
-VGS , Gate to Source Voltage (V)
AP9575AGS-HF
6
C iss
1200
4
800
2
400
0
0
0
10
20
30
40
C oss
C rss
1
50
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
100us
-ID (A)
10
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
0.1
Normalized Thermal Response (Rthjc)
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
-ID , Drain Current (A)
V DS = -5V
T j =25 o C
VG
T j =150 o C
QG
20
-10V
QGS
QGD
10
Charge
Q
0
0
2
4
6
8
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4