AP9575GI-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
BVDSS
-60V
▼ Simple Drive Requirement
RDS(ON)
70mΩ
ID
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
G
D
S
-16A
TO-220CFM(I)
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications.
G
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-16
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-10
A
1
IDM
Pulsed Drain Current
-60
A
PD@TC=25℃
Total Power Dissipation
31.3
W
Linear Derating Factor
0.25
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
4.0
℃/W
65
℃/W
1
200902093
AP9575GI-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-60
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-10A
-
-
70
mΩ
VGS=-4.5V, ID=-8A
-
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-9A
-
14
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-10
uA
Drain-Source Leakage Current (T j=125 C) VDS=-48V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS= +20V,VDS=0V
-
-
+100
nA
ID=-9A
-
14
27
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-48V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
8
-
nC
VDS=-30V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-9A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
36
-
ns
tf
Fall Time
RD=3.3Ω
-
41
-
ns
Ciss
Input Capacitance
VGS=0V
-
1100 2800
pF
Coss
Output Capacitance
VDS=-25V
-
115
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
90
-
pF
Min.
Typ.
IS=-10A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-9A, VGS=0V,
-
38
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
61
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9575GI-HF
40
50
-10V
- 7 .0V
T C = 25 o C
-10V
-7.0V.
-5.0V
T C =150 o C
-5.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
40
-4.5V
30
20
30
-4.5V
20
10
10
V G = -3.0V
V G = -3.0 V
0
0
0
4
8
12
0
Fig 1. Typical Output Characteristics
12
2.0
I D = - 10 A
V G = -10V
Normalized RDS(ON)
I D = -8 A
T C =25 ℃
80
RDS(ON) (mΩ )
8
Fig 2. Typical Output Characteristics
90
70
1.6
1.2
0.8
60
0.4
50
2
4
6
8
-50
10
0
50
100
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
1.5
8
1.3
Normalized -VGS(th) (V)
-IS(A)
4
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
6
T j =150 o C
T j =25 o C
4
150
1.1
0.9
0.7
2
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9575GI-HF
f=1.0MHz
10000
V DS = - 48 V
ID= -9A
12
C iss
1000
C (pF)
-VGS , Gate to Source Voltage (V)
15
9
6
C oss
C rss
100
3
10
0
0
10
20
30
1
40
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
100us
-ID (A)
10
1ms
10ms
100ms
1s
DC
1
o
T c =25 C
Single Pulse
Normalized Thermal Response (Rthjc)
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
Single Pulse
0.01
0
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4