AP9577GI
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
D
▼ Simple Drive Requirement
-60V
RDS(ON)
64mΩ
ID
▼ Fast Switching Characteristic
G
▼ RoHS Compliant
BVDSS
-17A
S
Description
AP9577 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
G
The TO-220CFM package is widely preferred for all commercialindustrial through hole applications. The mold compound provides a
high isolation voltage capability and low thermal resistance between the
tab and the external heat-sink.
D
TO-220CFM(I)
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-60
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-17
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-11
A
1
IDM
Pulsed Drain Current
-85
A
PD@TC=25℃
Total Power Dissipation
31.3
W
PD@TA=25℃
Total Power Dissipation
1.92
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data and specifications subject to change without notice
1
201203122
AP9577GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=-250uA
-60
-
-
V
VGS=-10V, ID=-12A
-
-
64
mΩ
VGS=-4.5V, ID=-8A
-
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-8A
-
17
-
S
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-12A
-
35
56
nC
Qgs
Gate-Source Charge
VDS=-48V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
12
-
nC
td(on)
Turn-on Delay Time
VDS=-30V
-
12
-
ns
tr
Rise Time
ID=-12A
-
23
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
45
-
ns
tf
Fall Time
VGS=-10V
-
60
-
ns
Ciss
Input Capacitance
VGS=0V
-
1440 2300
pF
Coss
Output Capacitance
VDS=-25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
16
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-12A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-12A, VGS=0V,
-
43
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
75
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9577GI
40
50
-ID , Drain Current (A)
40
30
V G = - 4 .0 V
20
-10V
-7.0V
-6.0V
-5.0V
T C =150 o C
-ID , Drain Current (A)
-10V
- 7 .0V
- 6 .0V
- 5.0 V
T C = 25 o C
30
V G = -4.0V
20
10
10
0
0
0
2
4
6
0
8
2
4
6
8
10
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2.4
I D = - 12 A
V G = -10V
I D = -8 A
T C =25 ℃
2.0
Normalized RDS(ON)
RDS(ON) (mΩ )
70
60
1.6
1.2
50
0.8
0.4
40
2
4
6
8
-50
10
0
50
100
-V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
2.0
12
10
Normalized -VGS(th)
1.6
-IS(A)
8
T j =150 o C
6
T j =25 o C
4
1.2
0.8
0.4
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9577GI
f=1.0MHz
12
2400
V DS = - 48 V
I D = - 12 A
2000
1600
8
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C iss
1200
4
800
2
400
0
0
0
10
20
30
40
C oss
C rss
1
50
5
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Operation in this
area limited by
RDS(ON)
Normalized Thermal Response (Rthjc)
Duty factor=0.5
100us
-ID (A)
10
1ms
10ms
100ms
1s
DC
1
T c =25 o C
Single Pulse
0
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.001
0.1
1
10
100
1000
0.00001
0.0001
0.001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4