AP9620AGM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 2.5V Gate Drive
D
D
▼ Lower On-resistance
D
D
SO-8
S
S
-20V
RDS(ON)
21mΩ
ID
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
G
-9A
S
Description
D
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
S
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
-20
V
+8
V
3
-9
A
3
-7.1
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
-40
A
PD@TA=25℃
Total Power Dissipation
2.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
50
℃/W
1
201408222
AP9620AGM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-20
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-4.5V, ID=-9A
-
-
21
mΩ
VGS=-2.5V, ID=-6A
-
-
35
mΩ
-0.3
-0.6
-1
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-9A
-
33
-
S
IDSS
Drain-Source Leakage Current
VDS=-16V, VGS=0V
-
-
-10
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
2
Qg
Total Gate Charge
ID=-9A
-
26
42
nC
Qgs
Gate-Source Charge
VDS=-10V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
9
-
nC
2
td(on)
Turn-on Delay Time
VDS=-10V
-
12
-
ns
tr
Rise Time
ID=-1A
-
18
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
78
-
ns
tf
Fall Time
VGS=-5V
-
57
-
ns
Ciss
Input Capacitance
VGS=0V
-
2200 3520
pF
Coss
Output Capacitance
VDS=-15V
-
270
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
250
-
pF
Rg
Gate Resistance
f=1.0MHz
-
4.7
9.4
Ω
Min.
Typ.
IS=-2.1A, VGS=0V
-
-
-1.2
V
.
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-9A, VGS=0V,
-
41
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
26
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9620AGM-HF
40
40
-5.0V
-4.5V
-3.5V
-2.5V
V G = - 2.0V
-ID , Drain Current (A)
30
T A = 150 o C
-ID , Drain Current (A)
o
T A = 25 C
20
10
30
20
10
0
0
0
1
2
3
4
0
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
28
I D = -6 A
T A =25 ℃
I D = -9 A
V G =- 4.5 V
1.8
24
22
.
Normalized RDS(ON)
26
RDS(ON) (mΩ )
-5.0V
-4.5V
-3.5V
-2.5V
V G = - 2.0V
1.6
1.4
1.2
1.0
20
0.8
18
0.6
0.4
16
1
2
3
4
5
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
8
1.6
I D =-250uA
Normalized -VGS(th) (V)
1.4
-IS(A)
6
4
T j =150 o C
T j =25 o C
2
1.2
1
0.8
0.6
0.4
0.2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9620AGM-HF
8
2400
C iss
6
2000
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
2800
I D = -9A
V DS = -10V
4
1600
1200
800
2
C oss
C rss
400
0
0
0
10
20
30
40
1
50
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
-ID (A)
10
100us
1ms
10ms
1
.
100ms
1s
0.1
T A =25 o C
Single Pulse
DC
Normalized Thermal Response (R thja)
Duty factor=0.5
Operation in this
area limited by
RDS(ON)
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP9620AGM-HF
MARKING INFORMATION
Part Number
9620AGM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5