AP9620GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On Resistance
D
D
▼ Capable of 2.5V Drive
D
D
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
SO-8
S
BVDSS
-20V
RDS(ON)
20mΩ
ID
-9.5A
S
S
Description
AP9620 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
D
G
S
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
3
ID@TA=25℃
Drain Current, VGS @ 4.5V
ID@TA=70℃
Drain Current, VGS @ 4.5V3
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
Linear Derating Factor
Rating
Units
-20
V
±8
V
-9.5
A
-7.6
A
-76
A
2.5
W
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
50
℃/W
1
201501122
AP9620GM-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min. Typ. Max. Units
VGS=0V, ID=-250uA
-20
-
-
V
VGS=-4.5V, ID=-9.5A
-
-
20
mΩ
VGS=-2.5V, ID=-6.0A
-
-
35
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-
-
-1
V
gfs
Forward Transconductance
VDS=-10V, ID=-9.5A
-
28
-
S
IDSS
Drain-Source Leakage Current
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS= ± 8V
-
-
±100
nA
Qg
Total Gate Charge
ID=-9.5A
-
30
-
nC
Qgs
Gate-Source Charge
VDS=-10V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-5V
-
3.5
-
nC
td(on)
Turn-on Delay Time
VDS=-10V
-
26
-
ns
tr
Rise Time
ID=-9.5A
-
500
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-4.5V
-
70
-
ns
tf
Fall Time
RD=1.05Ω
-
300
-
ns
Ciss
Input Capacitance
VGS=0V
-
2158
-
pF
Coss
Output Capacitance
VDS=-15V
-
845
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
o
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
Forward On Voltage
2
Test Conditions
Min. Typ. Max. Units
VD=VG=0V , VS=-1.2V
-
-
-2.08
A
Tj=25℃, IS=-2.5A, VGS=0V
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9620GM-HF
100
120
-10V
T A =25 o C
-10V
T A =150 o C
-8.0V
80
-8.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
90
-6.0V
60
V GS =-4.0V
60
-6.0V
V GS =-4.0V
40
30
20
0
0
0
2
4
0
6
4
6
8
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
40
I D =-9.5A
V GS =4.5V
I D =-9.5A
T A =25 ℃
1.4
Normalized R DS(ON)
35
RDS(ON) (mΩ )
2
30
25
1.2
1.0
0.8
20
0.6
15
1
2
3
4
5
-V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP9620GM-HF
3
10
2.5
2
6
PD (W)
-ID , Drain Current (A)
8
1.5
4
1
2
0.5
0
0
25
50
75
100
125
150
0
30
60
90
120
150
o
o
T c , Case Temperature ( C)
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
1000
Normalized Thermal Response (R thja)
Duty Factor = 0.5
100
100us
10
-ID (A)
1ms
10ms
1
100ms
1s
10s
DC
0.1
T A =25 o C
Single Pulse
0.1
0.1
0.05
0.02
PDM
0.01
0.01
t
Single Pulse
T
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
0.001
0.01
0.1
0.2
1
10
-V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
4
AP9620GM-HF
f=1.0MHz
7
10000
I D =-9.5A
V DS =-10V
5
Ciss
4
C (pF)
-VGS , Gate to Source Voltage (V)
6
1000
Coss
3
2
Crss
1
100
0
0
5
10
15
20
25
30
35
1
40
5
9
13
17
21
25
29
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1
100.00
0.8
10.00
0.6
-VGS(th) (V)
-IS(A)
T j =150 o C
o
T j =25 C
1.00
0.4
0.10
0.2
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
AP9620GM-HF
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
G
10%
S
VGS
VGS
-5V
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
0.5 x RATED VDS
-4.5V
QGS
G
S
QGD
VGS
-1~-3mA
I
G
I
D
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6
AP9620GM-HF
MARKING INFORMATION
Part Number
9620GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
7