AP9620M
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On Resistance
D
D
▼C
Capable of 2.5V Drive
D
D
▼ Fast Switching
G
▼ Simple Drive Requirement
S
SO-8
BVDSS
-20V
RDS(ON)
20mΩ
ID
-9.5A
S
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
S
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
Rating
Units
-20
V
±8
V
ID@TA=25℃
3
Continuous Drain Current
-9.5
A
ID@TA=70℃
Continuous Drain Current3
-7.6
A
1
IDM
Pulsed Drain Current
-76
A
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
50
℃/W
20020502
AP9620M
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
-20
-
-
V
-
-0.037
-
V/℃
VGS=-4.5V, ID=-9.5A
-
-
20
mΩ
VGS=-2.5V, ID=-6.0A
-
-
35
mΩ
VDS=VGS, ID=-250uA
-
-
-1
V
VDS=-10V, ID=-9.5A
-
28
-
S
o
VDS=-20V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 8V
-
-
±100
nA
ID=-9.5A
-
30
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=-250uA
Min. Typ. Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-10V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-5V
-
3.5
-
nC
VDS=-10V
-
26
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-9.5A
-
500
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=-4.5V
-
70
-
ns
tf
Fall Time
RD=1.05Ω
-
300
-
ns
Ciss
Input Capacitance
VGS=0V
-
2158
-
pF
Coss
Output Capacitance
VDS=-15V
-
845
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
2
Forward On Voltage
Test Conditions
Min. Typ. Max. Units
VD=VG=0V , VS=-1.2V
-
-
-2.08
A
Tj=25℃, IS=-2.5A, VGS=0V
-
-
-1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
AP9620M
120
100
-10V
T C =25 o C
-10V
T C =150 o C
-8.0V
80
-8.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
90
-6.0V
60
V GS =-4.0V
60
-6.0V
V GS =-4.0V
40
30
20
0
0
0
2
4
0
6
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
6
8
Fig 2. Typical Output Characteristics
1.6
40
I D =-9.5A
V GS =4.5V
I D =-9.5A
T C =25 ℃
1.4
Normalized R DS(ON)
35
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
30
25
1.2
1.0
0.8
20
0.6
15
1
2
3
4
5
-V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
6
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP9620M
3
10
2.5
2
6
PD (W)
-ID , Drain Current (A)
8
1.5
4
1
2
0.5
0
0
25
50
75
100
125
150
0
30
60
90
120
150
o
o
T c , Case Temperature ( C)
T c , Case Temperature ( C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
1000
Normalized Thermal Response (R thja)
Duty Factor = 0.5
100
100us
10
-ID (A)
1ms
10ms
1
100ms
1s
10s
DC
0.1
T C =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
Single Pulse
T
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
Rthja=125 oC/W
0.001
0.01
0.1
1
10
-V DS (V)
Fig 7. Maximum Safe Operating Area
100
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 8. Effective Transient Thermal Impedance
AP9620M
f=1.0MHz
7
10000
I D =-9.5A
V DS =-10V
5
Ciss
4
C (pF)
-VGS , Gate to Source Voltage (V)
6
1000
Coss
3
2
Crss
1
100
0
0
5
10
15
20
25
30
35
1
40
5
9
13
17
21
25
29
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1
100.00
0.8
10.00
0.6
-VGS(th) (V)
-IS(A)
T j =150 o C
o
T j =25 C
1.00
0.4
0.10
0.2
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.5
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9620M
VDS
90%
RD
VDS
D
0.5 x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
10%
S
VGS
VGS
-5V
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
0.5 x RATED VDS
-4.5V
QGS
G
S
QGD
VGS
-1~-3mA
I
I
G
D
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q