AP96T07GP-HF
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Simple Drive Requirement
▼ Lower On-resistance
▼ Fast Switching Characteristic
75V
RDS(ON)
4.2mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
120A
S
Description
AP96T07 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercialindustrial through hole applications. The low thermal resistance
and low package cost contribute to the worldwide popular
package.
G
D
TO-220(P)
S
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
75
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Drain Current (Chip)
180
A
120
A
120
A
ID@TC=25℃
ID@TC=100℃
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
3
1
IDM
Pulsed Drain Current
480
A
PD@TC=25℃
Total Power Dissipation
300
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.5
℃/W
62
℃/W
1
201501143
AP96T07GP-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Drain-Source Breakdown Voltage
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
75
-
-
V
VGS=10V, ID=40A
-
-
4.2
mΩ
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=40A
-
90
-
S
IDSS
Drain-Source Leakage Current
VDS=75V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=40A
-
92
150
nC
Qgs
Gate-Source Charge
VDS=60V
-
16
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
48
-
nC
td(on)
Turn-on Delay Time
VDS=40V
-
18
-
ns
tr
Rise Time
ID=40A
-
90
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
40
-
ns
tf
Fall Time
RD=1Ω
-
80
-
ns
Ciss
Input Capacitance
VGS=0V
-
3500 5600
pF
Coss
Output Capacitance
VDS=25V
-
1000
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
270
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.1
Ω
Min.
Typ.
IS=40A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=10A, VGS=0V
-
70
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
180
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 120A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP96T07GP-HF
300
160
ID , Drain Current (A)
ID , Drain Current (A)
250
10V
8.0V
7.0V
6.0V
T C = 175 o C
10V
8.0V
7.0V
6.0V
o
T C = 25 C
200
150
100
120
V GS =5.0V
80
40
V GS =5.0V
50
0
0
0
2
4
6
8
10
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
8
I D =30A
I D =40A
V G =10V
T C =25 o C
7
Normalized RDS(ON)
RDS(ON) (mΩ )
2.0
6
5
4
1.6
1.2
0.8
3
0.4
2
4
5
6
7
8
9
-50
10
0
Fig 3. On-Resistance v.s. Gate Voltage
1.2
Normalized VGS(th)
30
IS(A)
1.6
o
100
150
200
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
40
o
T j =175 C
50
T j , Junction Temperature ( o C)
V GS Gate-to-Source Voltage (V)
T j =25 C
20
0.8
0.4
10
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP96T07GP-HF
12
f=1.0MHz
5000
V DS =40V
V DS =45V
V DS =60V
10
4000
C iss
8
3000
C (pF)
VGS , Gate to Source Voltage (V)
I D = 40 A
6
2000
4
1000
C oss
2
C rss
0
0
0
20
40
60
80
100
1
120
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Operation in this
area limited by
RDS(ON)
100us
ID (A)
100
1ms
10ms
10
100ms
DC
o
T c =25 C
Single Pulse
Normalized Thermal Response (R thjc)
1000
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
AP96T07GP-HF
MARKING INFORMATION
96T07GP
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5