AP9928GEM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
D2
D2
▼ Capable of 2.5V gate drive
D1
D1
▼ Surface mount package
BVDSS
20V
RDS(ON)
23mΩ
ID
7.3A
G2
S2
SO-8
S1
G1
Description
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
±12
V
Continuous Drain Current
3
7.3
A
Continuous Drain Current
3
5.8
A
30
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200121051
AP9928GEM
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=4.5V, ID=7A
-
-
23
mΩ
VGS=2.5V, ID=5A
-
-
32
mΩ
0.5
-
-
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=VGS, ID=250uA
VDS=5V, ID=7A
-
18
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±12V
-
-
±10
uA
ID=7A
-
17
27
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
12
-
ns
tr
Rise Time
ID=1A
-
17
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
32
-
ns
tf
Fall Time
RD=10Ω
-
17
-
ns
Ciss
Input Capacitance
VGS=0V
-
500
800
pF
Coss
Output Capacitance
VDS=20V
-
260
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
140
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.8
4.2
Ω
Min.
Typ.
Max. Units
-
-
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
Test Conditions
IS=1.7A, VGS=0V
2
1.2
V
trr
Reverse Recovery Time
IS=7A, VGS=0V,
-
34
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
28
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 135 ℃/W when mounted on Min. copper pad.
AP9928GEM
30
30
10
V G =2.0V
ID , Drain Current (A)
o
T A =25 C
0
20
V G = 2.0 V
10
0
0
1
2
3
4
0
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
I D =7A
V G = 4.5V
ID=5A
o
T A =25 C
Normalized R DS(ON)
23
RDS(ON) (mΩ )
1
V DS , Drain-to-Source Voltage (V)
27
19
1.4
1.0
0.6
15
2
4
6
8
-50
10
0
50
100
150
o
T j , Junction Temperature ( C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Temperature
1.6
8
T j =150 o C
Normalized VGS(th) (V)
6
IS(A)
4.5V
3.5 V
3.0 V
2.5V
o
T A = 150 C
ID , Drain Current (A)
20
4.5V
3.5 V
3.0 V
2.5V
T j =25 o C
4
1.2
0.8
2
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9928GEM
f=1.0MHz
10000
ID=7A
12
V DS = 10 V
V DS = 12 V
V DS =1 6 V
9
C (pF)
VGS , Gate to Source Voltage (V)
15
6
1000
C oss
C iss
3
C rss
100
0
0
10
20
30
1
40
4
Fig 7. Gate Charge Characteristics
10
13
16
19
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
1ms
10
10ms
ID (A)
7
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1
100ms
0.1
1s
10s
DC
T A =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
0.01
0.001
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
QG
T j =150 o C
20
4.5V
QGS
QGD
10
Charge
0
0
1
2
3
4
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q