AP9960GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low Gate Charge
▼ Fast Switching
BVDSS
40V
RDS(ON)
16mΩ
ID
G
42A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
S
TO-252(H)
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP9960GJ) are available for low-profile applications.
GD
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
40
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
42
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
26
A
195
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
45
W
Linear Derating Factor
0.36
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
201007042
AP9960GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.032
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=20A
-
-
16
mΩ
VGS=4.5V, ID=18A
-
-
25
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=20A
-
30
-
S
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=150 C)
VDS=32V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=20A
-
18
-
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
Drain-Source Leakage Current (T j=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
12
-
nC
VDS=20V
-
9
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=20A
-
110
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
23
-
ns
tf
Fall Time
RD=1Ω
-
10
-
ns
Ciss
Input Capacitance
VGS=0V
-
1500
-
pF
Coss
Output Capacitance
VDS=25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
180
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=45A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time
IS=20A, VGS=0V
-
22
-
Qrr
Reverse Recovery Charge
dI/dt = 100A/us
-
27.4
-
ns
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
AP9960GH/J
120
200
10V
8.0V
o
150
ID , Drain Current (A)
ID , Drain Current (A)
T C =25 C
6.0V
100
50
80
6.0V
40
V G =4.0V
V G =4.0V
0
0
0.0
1.0
2.0
3.0
4.0
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
1.8
I D =20A
V G =10V
Normalized R DS(ON)
I D =20A
T C =25 ℃
40
RDS(ON) (mΩ )
10V
8.0V
o
T C =150 C
30
20
1.4
1.0
10
0
0.6
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
100
2.0
o
T j =150 C
VGS(th) (V)
IS(A)
10
T j =25 o C
1.5
1
1.0
0
0.5
0.0
0.4
0.8
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
25
100
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
175
AP9960GH/J
f=1.0MHz
14
10000
I D =20A
V DS =12V
V DS =16V
V DS =20V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
C iss
1000
6
4
C oss
C rss
2
100
0
0
10
20
30
40
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
100
ID (A)
10us
100us
10
1ms
o
T c =25 C
Single Pulse
10ms
100ms
1
Normalized Thermal Response (R thjc)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
PDM
t
Duty factor = t/T
Peak Tj = P DM x Rthjc + Tc
T
0.001
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q