AP9960GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Low On-Resistance
D2
D2
▼ Fast Switching Speed
D1
D1
40V
RDS(ON)
20mΩ
ID
▼ Surface Mount Package
G2
▼ RoHS Compliant & Halogen-Free
BVDSS
7.8A
S2
SO-8
S1
G1
Description
AP9960 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
D2
D1
G2
G1
S1
S2
The SO-8 package is widely preferred for all commercialindustrial surface mount applications using infrared reflow
technique and suited for voltage conversion or switch
applications.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
3
Drain Current, VGS @ 10V
3
Drain Current, VGS @ 10V
1
Rating
Units
40
V
+ 20
V
7.8
A
6.2
A
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Unit
62.5
℃/W
1
201501093
AP9960GM-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
-
V
-
0.032
-
V/℃
VGS=10V, ID=7A
-
-
20
mΩ
VGS=4.5V, ID=5A
-
-
32
mΩ
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=7A
-
25
-
S
IDSS
Drain-Source Leakage Current
VDS=40V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=32V ,VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=7A
-
14.7
-
nC
Qgs
Gate-Source Charge
VDS=20V
-
7.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6.8
-
nC
td(on)
Turn-on Delay Time
VDS=20V
-
11.5
-
ns
tr
Rise Time
ID=1A
-
6.3
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
28.2
-
ns
tf
Fall Time
RD=20Ω
-
12.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1725
-
pF
Coss
Output Capacitance
VDS=25V
-
235
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Min.
Typ.
VD=VG=0V , VS=1.3V
-
-
1.54
A
Tj=25℃, IS=2.3A, VGS=0V
-
-
1.3
V
o
Source-Drain Diode
Symbol
IS
VSD
Parameter
Continuous Source Current ( Body Diode )
Forward On Voltage
2
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9960GM-HF
36
32
10V
6.0V
5.0V
4.5V
o
T A =25 C
10V
6.0V
5.0V
4.5V
T A =150 o C
ID , Drain Current (A)
ID , Drain Current (A)
24
24
V GS =4.0V
12
V GS =4.0V
16
8
0
0
0
1
2
3
0
4
V DS , Drain-to-Source Voltage (V)
1
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
80
I D =7.0A
T A =25 ℃
I D =7.0A
V GS =10V
Normalized R DS(ON)
RDS(ON) (mΩ )
60
40
1.4
0.8
20
0
0.2
2
4
6
8
10
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
12
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
AP9960GM-HF
10
2.4
ID , Drain Current (A)
8
1.6
PD (W)
6
4
0.8
2
0
0
25
50
75
100
125
150
0
50
T c , Case Temperature ( o C)
100
150
T A , Ambient Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
10s
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135oC/W
T A =25 o C
Single Pulse
DC
0.01
0.1
Normalized Thermal Response (R thja)
Duty Factor = 0.5
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
4
AP9960GM-HF
f=1.0MHz
12
10000
VGS , Gate to Source Voltage (V)
I D =7.0A
Ciss
9
V DS =12V
V DS =16V
V DS =20V
C (pF)
1000
6
Coss
Crss
100
3
0
10
0
5
10
15
20
25
1
7
13
19
25
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3.5
100
3
10
2.5
Tj=25 o C
VGS(th) (V)
IS(A)
Tj=150 o C
1
2
1.5
0.1
1
0.5
0.01
0
0.4
0.8
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
5
AP9960GM-HF
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
G
+
10%
VGS
S
10 v
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
D
4.5V
0.5 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
+
1~ 3 mA
IG
I
D
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
6
AP9960GM-HF
MARKING INFORMATION
Part Number
9960GM
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
7