AP9965GEM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
D2
▼ Simple Drive Requirement
D2
D1
D1
▼ Dual N MOSFET Package
BVDSS
40V
RDS(ON)
28mΩ
ID
6.7A
G2
S2
▼ RoHS Compliant
SO-8
S1
G1
Description
D1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G1
D2
G2
S1
S2
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
40
V
±16
V
3
6.7
A
3
5.2
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
30
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
200622062-1/4
AP9965GEM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
40
-
-
V
-
0.045
-
V/℃
VGS=10V, ID=6A
-
-
28
mΩ
VGS=4.5V, ID=4A
-
-
32
mΩ
0.8
-
2.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
2
VDS=VGS, ID=250uA
VDS=10V, ID=6A
-
6
-
S
o
VDS=40V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=32V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±16V
-
-
±30
uA
ID=6A
-
8.3
13
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=30V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.6
-
nC
VDS=20V
-
4.6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19.6
-
ns
tf
Fall Time
RD=20Ω
-
5.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
615
980
pF
Coss
Output Capacitance
VDS=25V
-
90
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.8
2.7
Ω
Min.
Typ.
IS=1.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=6A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
14
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 135 ℃/W when mounted on Min. copper pad.
2/4
AP9965GEM
30
20
10
20
10
0
0
0
1
2
3
0
4
1
2
Fig 1. Typical Output Characteristics
4
5
6
Fig 2. Typical Output Characteristics
70
1.6
ID=4A
T A =25 ℃
ID=6A
V G =10V
Normalized RDS(ON)
RDS(ON) (mΩ)
3
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
45
20
1.3
1.0
0.7
2
4
6
8
10
25
V GS , Gate-to-Source Voltage (V)
75
100
125
150
T j , Junction Temperature ( C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
50.0
6
40.0
RDS(ON) (mΩ)
8
T j =150 o C
50
o
Fig 3. On-Resistance v.s. Gate Voltage
IS(A)
10V
7.0 V
5.0 V
4.5 V
V G = 3.0 V
T A = 150 o C
ID , Drain Current (A)
ID , Drain Current (A)
30
10V
7.0 V
5.0 V
4.5 V
V G = 3.0 V
T A = 25 o C
T j =25 o C
4
2
V GS =4.5V
30.0
V GS =10V
20.0
0
10.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
0
10
20
30
40
I D , Drain Current (A)
Fig 6. On-Resistance vs.
Drain Current
3/4
AP9965GEM
f=1.0MHz
10000
VGS , Gate to Source Voltage (V)
16
ID=6A
12
V DS = 20 V
V DS = 25 V
V DS = 30 V
1000
C (pF)
C iss
8
100
C oss
C rss
4
0
10
0
5
10
15
20
1
5
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
Normalized Thermal Response (Rthja)
100
100us
1ms
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
1s
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 135℃/W
DC
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
ID , Drain Current (A)
V DS =5V T j =25 o C
o
T j =150 C
VG
QG
20
4.5V
QGS
QGD
10
Charge
Q
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4