AP9T16GH/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Capable of 2.5V gate drive
▼ Single Drive Requirement
20V
RDS(ON)
25mΩ
ID
G
▼ RoHS Compliant
BVDSS
25A
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G D
S
TO-252(H)
G
D
S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±16
V
ID@TC=25℃
Continuous Drain Current, V GS @ 4.5V
25
A
ID@TC=100℃
Continuous Drain Current, V GS @ 4.5V
16
A
90
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
25
W
Linear Derating Factor
0.2
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
5
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data and specifications subject to change without notice
200908052-1/4
AP9T16GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
-
-
25
mΩ
VGS=2.5V, ID=5.2A
-
-
40
mΩ
VDS=VGS, ID=250uA
0.5
-
1.5
V
VDS=5V, ID=18A
-
19
-
S
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=16V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±16V
-
-
±100
nA
ID=18A
-
10
16
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
10
-
ns
tr
Rise Time
ID=18A
-
98
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
18
-
ns
tf
Fall Time
RD=0.56Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
870
1390
pF
Coss
Output Capacitance
VDS=20V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.38
-
Ω
Min.
Typ.
IS=18A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=18A, VGS=0V,
-
19
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
10
-
nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9T16GH/J
100
80
T C =25 o C
ID , Drain Current (A)
ID , Drain Current (A)
T C = 150 o C
5.0V
4.5V
80
60
3.5V
40
2.5V
5.0V
4.5V
60
40
3.5V
20
2.5V
20
V G =1.5V
V G =1.5V
0
0
0
1
2
3
4
5
0
6
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
42
1.6
I D = 5.2 A
37
T C =25 o C
I D =6A
V G =4.5V
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
1
32
27
22
1.2
1.0
0.8
17
12
0.6
0
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10
2.0
Normalized VGS(th) (V)
8
IS(A)
6
T j =150 o C
T j =25 o C
4
1.5
1.0
0.5
2
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP9T16GH/J
14
f=1.0MHz
10000
V DS =10V
V DS =12V
V DS =16V
10
C (pF)
VGS , Gate to Source Voltage (V)
I D =18A
12
8
1000
C iss
6
4
2
C oss
C rss
100
0
0
5
10
15
20
25
1
30
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthjc)
1
100us
ID (A)
9
V DS , Drain-to-Source Voltage (V)
1ms
10
10ms
100ms
DC
o
T c =25 C
Single Pulse
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4/4